Yong-Yan LU

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 12,021,082
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for FinFET devices
- Patent number 11,855,089
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 11,574,907
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for FinFET devices
- Patent number 11,569,230
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised epitaxial LDD in MuGFETs and methods for forming the same
- Patent number 11,489,054
- Issue date Nov 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS finFET with doped spacers and method for forming the same
- Patent number 10,964,815
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hong-Nien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 10,916,546
- Issue date Feb 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised epitaxial LDD in MuGFETs and methods for forming the same
- Patent number 10,840,346
- Issue date Nov 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for FinFET devices
- Patent number 10,797,052
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 10,515,966
- Issue date Dec 24, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised epitaxial LDD in MuGFETs and methods for forming the same
- Patent number 10,516,024
- Issue date Dec 24, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for FinFET devices
- Patent number 10,157,924
- Issue date Dec 18, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 10,056,383
- Issue date Aug 21, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 9,607,838
- Issue date Mar 28, 2017
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterned conductive structure and method for forming the same
- Patent number 9,595,754
- Issue date Mar 14, 2017
- Wistron NeWeb Corp.
- Babak Radi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for FinFET devices
- Patent number 9,553,172
- Issue date Jan 24, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20230187447
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20230163197
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FINFET DEVICES
- Publication number 20220302113
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20210159226
- Publication date May 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same
- Publication number 20210083063
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FINFET DEVICES
- Publication number 20210020634
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20200135736
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same
- Publication number 20200006505
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20190378927
- Publication date Dec 12, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- HONG-NIEN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for FinFET Devices
- Publication number 20190123049
- Publication date Apr 25, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20190006363
- Publication date Jan 3, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same
- Publication number 20180226479
- Publication date Aug 9, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20170179130
- Publication date Jun 22, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for FinFET Devices
- Publication number 20170133371
- Publication date May 11, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20170084741
- Publication date Mar 23, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for FinFET Devices
- Publication number 20160233319
- Publication date Aug 11, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNED CONDUCTIVE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20160192482
- Publication date Jun 30, 2016
- WISTRON NEWEB CORP.
- Babak RADI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Yong-Yan LU

Person

Patents Grantslast 30 patents

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Method and structure for FinFET devices

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Method and structure for FinFET devices

Raised epitaxial LDD in MuGFETs and methods for forming the same

CMOS finFET with doped spacers and method for forming the same

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Raised epitaxial LDD in MuGFETs and methods for forming the same

Method and structure for FinFET devices

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Raised epitaxial LDD in MuGFETs and methods for forming the same

Method and structure for FinFET devices

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Patterned conductive structure and method for forming the same

Method and structure for FinFET devices

Patents Applicationslast 30 patents

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

Semiconductor Device and Method of Manufacture

METHOD AND STRUCTURE FOR FINFET DEVICES

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same

METHOD AND STRUCTURE FOR FINFET DEVICES

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Method and Structure for FinFET Devices

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

Method and Structure for FinFET Devices

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

Method and Structure for FinFET Devices

PATTERNED CONDUCTIVE STRUCTURE AND METHOD FOR FORMING THE SAME