Yonggang YANG

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Intelligent customizable wet processing system
- Patent number 12,198,946
- Issue date Jan 14, 2025
- Yangtze Memory Technologies Co., Ltd.
- Gonglian Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming dielectric layer in forming semiconductor device
- Patent number 12,080,560
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yonggang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having pocket structure in memory s...
- Patent number 12,029,038
- Issue date Jul 2, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yonggang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having pocket structure in memory s...
- Patent number 11,469,243
- Issue date Oct 11, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yonggang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with enlarged joint critical dimen...
- Patent number 11,205,661
- Issue date Dec 21, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yonggang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Step coverage improvement for memory channel layer in 3D NAND memory
- Patent number 10,707,221
- Issue date Jul 7, 2020
- Yangtze Memory Technologies Co., Ltd.
- Er Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FABRICATING SLIT STRUCTURES IN THREE-DIMENSIONAL SEMICONDUCTIVE DEV...
- Publication number 20250159882
- Publication date May 15, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yonggang YANG
Information Patent Application
SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...
- Publication number 20240379787
- Publication date Nov 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiaming Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240206165
- Publication date Jun 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yonggang YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD
- Publication number 20240206163
- Publication date Jun 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiandong WANG
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ITS FABRICATION METHOD, MEMORY AND MEMO...
- Publication number 20240164098
- Publication date May 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yonggang YANG
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF, MEMORY, AND ME...
- Publication number 20240164095
- Publication date May 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yonggang YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DIELECTRIC LAYER IN FORMING SEMICONDUCTOR DEVICE
- Publication number 20230069697
- Publication date Mar 2, 2023
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Yonggang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING POCKET STRUCTURE IN MEMORY S...
- Publication number 20220367508
- Publication date Nov 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yonggang YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTELLIGENT CUSTOMIZABLE WET PROCESSING SYSTEM
- Publication number 20220139732
- Publication date May 5, 2022
- Yangtze Memory Technologies Co., Ltd.
- Gonglian WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT PAD STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20210384219
- Publication date Dec 9, 2021
- Yangtze Memory Technologies Co., Ltd.
- Di WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH ENLARGED JOINT CRITICAL DIMEN...
- Publication number 20210225861
- Publication date Jul 22, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Yonggang YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING POCKET STRUCTURE IN MEMORY S...
- Publication number 20210118901
- Publication date Apr 22, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Yonggang YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTELLIGENT CUSTOMIZABLE WET PROCESSING SYSTEM
- Publication number 20200243352
- Publication date Jul 30, 2020
- Yangtze Memory Technologies Co., Ltd.
- Gonglian WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEP COVERAGE IMPROVEMENT FOR MEMORY CHANNEL LAYER IN 3D NAND MEMORY
- Publication number 20200098772
- Publication date Mar 26, 2020
- Yangtze Memory Technologies Co., Ltd.
- Er Wei WANG
- H01 - BASIC ELECTRIC ELEMENTS

Yonggang YANG

Person

Patents Grantslast 30 patents

Intelligent customizable wet processing system

Methods for forming dielectric layer in forming semiconductor device

Three-dimensional memory device having pocket structure in memory s...

Three-dimensional memory device having pocket structure in memory s...

Three-dimensional memory devices with enlarged joint critical dimen...

Step coverage improvement for memory channel layer in 3D NAND memory

Patents Applicationslast 30 patents

FABRICATING SLIT STRUCTURES IN THREE-DIMENSIONAL SEMICONDUCTIVE DEV...

SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...

MEMORY DEVICE AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD

SEMICONDUCTOR STRUCTURE AND ITS FABRICATION METHOD, MEMORY AND MEMO...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF, MEMORY, AND ME...

METHODS FOR FORMING DIELECTRIC LAYER IN FORMING SEMICONDUCTOR DEVICE

THREE-DIMENSIONAL MEMORY DEVICE HAVING POCKET STRUCTURE IN MEMORY S...

INTELLIGENT CUSTOMIZABLE WET PROCESSING SYSTEM

CONTACT PAD STRUCTURE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES WITH ENLARGED JOINT CRITICAL DIMEN...

THREE-DIMENSIONAL MEMORY DEVICE HAVING POCKET STRUCTURE IN MEMORY S...

INTELLIGENT CUSTOMIZABLE WET PROCESSING SYSTEM

STEP COVERAGE IMPROVEMENT FOR MEMORY CHANNEL LAYER IN 3D NAND MEMORY