Yonghong Tao

Person

Xiamen City, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide power diode device and fabrication method thereof
- Patent number 11,967,651
- Issue date Apr 23, 2024
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Yonghong Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,869,969
- Issue date Jan 9, 2024
- HUNAN SAN'AN SEMICONDUCTOR CO., LTD.
- Yonghong Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide power diode device and fabrication method thereof
- Patent number 11,437,525
- Issue date Sep 6, 2022
- HUNAN SANAN SEMICONDUCTOR CO., LTD.
- Yonghong Tao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20240162327
- Publication date May 16, 2024
- HUNAN SAN'AN SEMICONDUCTOR CO., LTD.
- Zhigao PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240120394
- Publication date Apr 11, 2024
- HUNAN SAN'AN SEMICONDUCTOR CO., LTD.
- Yonghong TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR D...
- Publication number 20230387290
- Publication date Nov 30, 2023
- XIAMEN SAN'AN INTEGRATED CIRCUIT CO., LTD.
- Lijun LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20220310822
- Publication date Sep 29, 2022
- XIAMEN SAN'AN INTEGRATED CIRCUIT CO., LTD.
- YONGHONG TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER DIODE DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220293800
- Publication date Sep 15, 2022
- Hunan Sanan Semiconductor Co., Ltd.
- Yonghong Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220209010
- Publication date Jun 30, 2022
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Yonghong TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER DIODE DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220005959
- Publication date Jan 6, 2022
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Yonghong Tao
- H01 - BASIC ELECTRIC ELEMENTS

Yonghong Tao

Person

Patents Grantslast 30 patents

Silicon carbide power diode device and fabrication method thereof

Semiconductor device and method for manufacturing the same

Silicon carbide power diode device and fabrication method thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SILICON CARBIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR D...

POWER DEVICE AND METHOD FOR MAKING THE SAME

SILICON CARBIDE POWER DIODE DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SILICON CARBIDE POWER DIODE DEVICE AND FABRICATION METHOD THEREOF