Yongjun Shi

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Preventing dielectric void over trench isolation region
- Patent number 11,171,036
- Issue date Nov 9, 2021
- GLOBALFOUNDRIES U.S. INC.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI structure with liner along lower portion of longitudinal sides...
- Patent number 10,910,276
- Issue date Feb 2, 2021
- GLOBALFOUNDRIES Inc.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned chamferless interconnect structures of semiconductor d...
- Patent number 10,804,199
- Issue date Oct 13, 2020
- GLOBALFOUNDRIES Inc.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type transistors with spacers on the gates
- Patent number 10,636,894
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with improved dielectric gap fill
- Patent number 10,546,775
- Issue date Jan 28, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial region for embedded source/drain region having uniform th...
- Patent number 10,461,155
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- Yoong Hooi Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-curvature cavity for epitaxial semiconductor growth
- Patent number 10,297,675
- Issue date May 21, 2019
- GLOBALFOUNDRIES Inc.
- Alina Vinslava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vertical field effect transistors with different...
- Patent number 10,249,538
- Issue date Apr 2, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finfet diffusion break having protective liner in fin insulator
- Patent number 10,164,010
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure incorporating non-planar field effect...
- Patent number 10,068,902
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PREVENTING DIELECTRIC VOID OVER TRENCH ISOLATION REGION
- Publication number 20210111065
- Publication date Apr 15, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CHAMFERLESS INTERCONNECT STRUCTURES OF SEMICONDUCTOR D...
- Publication number 20200098688
- Publication date Mar 26, 2020
- GLOBALFOUNDRIES INC.
- YONGJUN SHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH IMPROVED DIELECTRIC GAP FILL
- Publication number 20200043779
- Publication date Feb 6, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES
- Publication number 20190280105
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH
- Publication number 20190181243
- Publication date Jun 13, 2019
- GLOBALFOUNDRIES INC.
- Alina Vinslava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL REGION FOR EMBEDDED SOURCE/DRAIN REGION HAVING UNIFORM TH...
- Publication number 20190148492
- Publication date May 16, 2019
- GLOBALFOUNDRIES INC.
- Yoong Hooi Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH
- Publication number 20190131433
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Alina Vinslava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING VERTICAL FIELD EFFECT TRANSISTORS WITH DIFFERENT...
- Publication number 20190103319
- Publication date Apr 4, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS

Yongjun Shi

Person

Patents Grantslast 30 patents

Preventing dielectric void over trench isolation region

STI structure with liner along lower portion of longitudinal sides...

Self-aligned chamferless interconnect structures of semiconductor d...

Fin-type transistors with spacers on the gates

Field-effect transistors with improved dielectric gap fill

Epitaxial region for embedded source/drain region having uniform th...

Dual-curvature cavity for epitaxial semiconductor growth

Method of forming vertical field effect transistors with different...

Finfet diffusion break having protective liner in fin insulator

Integrated circuit structure incorporating non-planar field effect...

Patents Applicationslast 30 patents

PREVENTING DIELECTRIC VOID OVER TRENCH ISOLATION REGION

SELF-ALIGNED CHAMFERLESS INTERCONNECT STRUCTURES OF SEMICONDUCTOR D...

FIELD-EFFECT TRANSISTORS WITH IMPROVED DIELECTRIC GAP FILL

FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES

DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH

EPITAXIAL REGION FOR EMBEDDED SOURCE/DRAIN REGION HAVING UNIFORM TH...

DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH

METHOD OF FORMING VERTICAL FIELD EFFECT TRANSISTORS WITH DIFFERENT...