Yongping Ding

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for fabricating anode shorted field stop insulated gate bip...
- Patent number 10,522,666
- Issue date Dec 31, 2019
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process method and structure for high voltage MOSFETs
- Patent number 10,115,814
- Issue date Oct 30, 2018
- Alpha and Omega Semiconductor Incorporated
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating anode shorted field stop insulated gate bip...
- Patent number 10,050,134
- Issue date Aug 14, 2018
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power trench MOSFET with improved unclamped inductive switching (UI...
- Patent number 9,997,593
- Issue date Jun 12, 2018
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process method and structure for high voltage MOSFETs
- Patent number 9,887,283
- Issue date Feb 6, 2018
- Alpha and Omega Semiconductor Incorporated
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field balance metal oxide field effect transistor (FBM)
- Patent number 9,865,678
- Issue date Jan 9, 2018
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process method and structure for high voltage MOSFETS
- Patent number 9,755,052
- Issue date Sep 5, 2017
- Alpha and Omega Semiconductor Incorporated
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power trench MOSFET with improved unclamped inductive switching (UI...
- Patent number 9,704,948
- Issue date Jul 11, 2017
- Alpha & Omega Semiconductor (Cayman), Ltd.
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Assymetric poly gate for optimum termination design in trench power...
- Patent number 9,627,526
- Issue date Apr 18, 2017
- Alpha and Omega Semiconductor Incorporated
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating anode shorted field stop insulated gate bip...
- Patent number 9,478,646
- Issue date Oct 25, 2016
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field balance metal oxide field effect transistor (FBM)
- Patent number 9,450,083
- Issue date Sep 20, 2016
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming SGT MOSFETs with improved termination breakdown v...
- Patent number 9,431,495
- Issue date Aug 30, 2016
- Alpha and Omega Semiconductor Incorporated
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field balance metal oxide field effect transistor (FBM)
- Patent number 9,129,822
- Issue date Sep 8, 2015
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination of high voltage (HV) devices with new configurations an...
- Patent number 8,803,251
- Issue date Aug 12, 2014
- Alpha and Omega Semiconductor Incorporated
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field balance metal oxide field effect transistor (FBM)
- Patent number 8,785,279
- Issue date Jul 22, 2014
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device employing aluminum alloy lead-frame with anodi...
- Patent number 8,716,069
- Issue date May 6, 2014
- Alpha & Omega Semiconductor, Inc.
- Yan Xun Xue
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of forming an asymmetric poly gate for optimum termination d...
- Patent number 8,697,520
- Issue date Apr 15, 2014
- Alpha & Omega Semiconductor Incorporationed
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET device with self-aligned integrated Schottky diode
- Patent number 8,587,061
- Issue date Nov 19, 2013
- Alpha & Omega Semiconductor, Inc.
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET device with self-aligned integrated Schottky and its m...
- Patent number 8,252,648
- Issue date Aug 28, 2012
- Alpha & Omega Semiconductor, Inc.
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS
- Publication number 20200303517
- Publication date Sep 24, 2020
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING ANODE SHORTED FIELD STOP INSULATED GATE BIP...
- Publication number 20180204937
- Publication date Jul 19, 2018
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS
- Publication number 20180145167
- Publication date May 24, 2018
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRENCH MOSFET WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING (UI...
- Publication number 20170373139
- Publication date Dec 28, 2017
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASSYMETRIC POLY GATE FOR OPTIMUM TERMINATION DESIGN IN TRENCH POWER...
- Publication number 20170069750
- Publication date Mar 9, 2017
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION OF HIGH VOLTAGE (HV) DEVICES WITH NEW CONFIGURATIONS AN...
- Publication number 20160372542
- Publication date Dec 22, 2016
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)
- Publication number 20160351659
- Publication date Dec 1, 2016
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING ANODE SHORTED FIELD STOP INSULATED GATE BIP...
- Publication number 20160284797
- Publication date Sep 29, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE EMPLOYING ALUMINUM ALLOY LEAD-FRAME WITH ANODI...
- Publication number 20160056098
- Publication date Feb 25, 2016
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRENCH MOSFET WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING (UI...
- Publication number 20160043168
- Publication date Feb 11, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SGT MOSFETS WITH IMPROVED TERMINATION BREAKDOWN V...
- Publication number 20160043192
- Publication date Feb 11, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION OF HIGH VOLTAGE (HV) DEVICES WITH NEW CONFIGURATIONS AN...
- Publication number 20160013267
- Publication date Jan 14, 2016
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)
- Publication number 20150372129
- Publication date Dec 24, 2015
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE EMPLOYING ALUMINUM ALLOY LEAD-FRAME WITH ANODI...
- Publication number 20150262925
- Publication date Sep 17, 2015
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS
- Publication number 20150060936
- Publication date Mar 5, 2015
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS
- Publication number 20140332844
- Publication date Nov 13, 2014
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)
- Publication number 20140319604
- Publication date Oct 30, 2014
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE EMPLOYING ALUMINUM ALLOY LEAD-FRAME WITH ANODI...
- Publication number 20140091446
- Publication date Apr 3, 2014
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)
- Publication number 20140027841
- Publication date Jan 30, 2014
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING AN ASSYMETRIC POLY GATE FOR OPTIMUM TERMINATION D...
- Publication number 20130228857
- Publication date Sep 5, 2013
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING GATE-OXIDE WITH STEP-GRADED THICKNESS IN TRENCHED...
- Publication number 20130224919
- Publication date Aug 29, 2013
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING ANODE SHORTED FIELD STOP INSULATED GATE BIP...
- Publication number 20130029461
- Publication date Jan 31, 2013
- ANUP BHALLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination of high voltage (HV) devices with new configurations an...
- Publication number 20130020671
- Publication date Jan 24, 2013
- Alpha and Omega Semiconductor, Inc.
- Yeehang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOSFET Device with Self-Aligned Integrated Schottky Diode
- Publication number 20120292692
- Publication date Nov 22, 2012
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOSFET Device with Self-Aligned Integrated Schottky and its M...
- Publication number 20110316076
- Publication date Dec 29, 2011
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS

Yongping Ding

Person

Patents Grantslast 30 patents

Methods for fabricating anode shorted field stop insulated gate bip...

Process method and structure for high voltage MOSFETs

Methods for fabricating anode shorted field stop insulated gate bip...

Power trench MOSFET with improved unclamped inductive switching (UI...

Process method and structure for high voltage MOSFETs

High voltage field balance metal oxide field effect transistor (FBM)

Process method and structure for high voltage MOSFETS

Power trench MOSFET with improved unclamped inductive switching (UI...

Assymetric poly gate for optimum termination design in trench power...

Methods for fabricating anode shorted field stop insulated gate bip...

High voltage field balance metal oxide field effect transistor (FBM)

Method of forming SGT MOSFETs with improved termination breakdown v...

High voltage field balance metal oxide field effect transistor (FBM)

Termination of high voltage (HV) devices with new configurations an...

High voltage field balance metal oxide field effect transistor (FBM)

Semiconductor device employing aluminum alloy lead-frame with anodi...

Method of forming an asymmetric poly gate for optimum termination d...

Power MOSFET device with self-aligned integrated Schottky diode

Power MOSFET device with self-aligned integrated Schottky and its m...

Patents Applicationslast 30 patents

PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS

METHODS FOR FABRICATING ANODE SHORTED FIELD STOP INSULATED GATE BIP...

PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS

POWER TRENCH MOSFET WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING (UI...

ASSYMETRIC POLY GATE FOR OPTIMUM TERMINATION DESIGN IN TRENCH POWER...

TERMINATION OF HIGH VOLTAGE (HV) DEVICES WITH NEW CONFIGURATIONS AN...

HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)

METHODS FOR FABRICATING ANODE SHORTED FIELD STOP INSULATED GATE BIP...

SEMICONDUCTOR DEVICE EMPLOYING ALUMINUM ALLOY LEAD-FRAME WITH ANODI...

POWER TRENCH MOSFET WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING (UI...

METHOD OF FORMING SGT MOSFETS WITH IMPROVED TERMINATION BREAKDOWN V...

TERMINATION OF HIGH VOLTAGE (HV) DEVICES WITH NEW CONFIGURATIONS AN...

HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)

SEMICONDUCTOR DEVICE EMPLOYING ALUMINUM ALLOY LEAD-FRAME WITH ANODI...

PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS

A PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS

HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)

SEMICONDUCTOR DEVICE EMPLOYING ALUMINUM ALLOY LEAD-FRAME WITH ANODI...

HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)

METHOD OF FORMING AN ASSYMETRIC POLY GATE FOR OPTIMUM TERMINATION D...

METHOD FOR MAKING GATE-OXIDE WITH STEP-GRADED THICKNESS IN TRENCHED...

METHODS FOR FABRICATING ANODE SHORTED FIELD STOP INSULATED GATE BIP...

Termination of high voltage (HV) devices with new configurations an...

Power MOSFET Device with Self-Aligned Integrated Schottky Diode

Power MOSFET Device with Self-Aligned Integrated Schottky and its M...