Yongshun SUN

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-semiconductor layer photodetector and related method
- Patent number 12,051,761
- Issue date Jul 30, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip current sensor
- Patent number 11,821,924
- Issue date Nov 21, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- G01 - MEASURING TESTING
Information Patent Grant
Nonvolatile memory device with a doped region between a source and...
- Patent number 11,810,982
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongshun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic field sensor and methods of fabricating a magnetic field s...
- Patent number 11,762,042
- Issue date Sep 19, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ping Zheng
- G01 - MEASURING TESTING
Information Patent Grant
Probe card integrated with a hall sensor
- Patent number 11,761,983
- Issue date Sep 19, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Guoquan Teo
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor non-volatile memory devices
- Patent number 11,641,739
- Issue date May 2, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongshun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One transistor two capacitors nonvolatile memory cell
- Patent number 11,515,314
- Issue date Nov 29, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hall effect sensors
- Patent number 11,500,041
- Issue date Nov 15, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongshun Sun
- G01 - MEASURING TESTING
Information Patent Grant
Multi-finger gate nonvolatile memory cell
- Patent number 11,495,608
- Issue date Nov 8, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Partially silicided nonvolatile memory devices and integration schemes
- Patent number 11,450,677
- Issue date Sep 20, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact memory cell with a shared conductive select gate and method...
- Patent number 11,437,392
- Issue date Sep 6, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongshun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structures and methods of forming memory structures
- Patent number 11,380,703
- Issue date Jul 5, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hall effect sensor devices and methods of forming hall effect senso...
- Patent number 11,372,061
- Issue date Jun 28, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongshun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact memory cell with a shared conductive word line and methods...
- Patent number 11,309,324
- Issue date Apr 19, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongshun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor non-volatile memory devices
- Patent number 11,139,311
- Issue date Oct 5, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongshun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hall effect sensors with tunable sensitivity and/or resistance
- Patent number 11,047,930
- Issue date Jun 29, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongshun Sun
- G01 - MEASURING TESTING
Information Patent Grant
Hall element for 3-D sensing and method for producing the same
- Patent number 10,763,427
- Issue date Sep 1, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making non-volatile memory device
- Patent number 10,475,803
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Anson Heryanto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including vertical and lateral hall elem...
- Patent number 10,424,616
- Issue date Sep 24, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yongshun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hall element for 3-D sensing and method for producing the same
- Patent number 10,211,392
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR COUPLED TO TERMINALS FOR INJECTING CHARGE CARRIERS INTO...
- Publication number 20240224528
- Publication date Jul 4, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yongshun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ON-CHIP CURRENT SENSOR
- Publication number 20230280378
- Publication date Sep 7, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- G01 - MEASURING TESTING
Information Patent Application
PROBE CARD INTEGRATED WITH A HALL SENSOR
- Publication number 20230083401
- Publication date Mar 16, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Guoquan TEO
- G01 - MEASURING TESTING
Information Patent Application
NONVOLATILE MEMORY DEVICE WITH A DOPED REGION BETWEEN A SOURCE AND...
- Publication number 20230029507
- Publication date Feb 2, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- YONGSHUN SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC FIELD SENSOR AND METHODS OF FABRICATING A MAGNETIC FIELD S...
- Publication number 20220171001
- Publication date Jun 2, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ping ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY SILICIDED NONVOLATILE MEMORY DEVICES AND INTEGRATION SCHEMES
- Publication number 20220149057
- Publication date May 12, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- LANXIANG WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURES AND METHODS OF FORMING MEMORY STRUCTURES
- Publication number 20220139929
- Publication date May 5, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- XINSHU CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALL EFFECT SENSORS
- Publication number 20220107372
- Publication date Apr 7, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yongshun SUN
- G01 - MEASURING TESTING
Information Patent Application
MULTI-FINGER GATE NONVOLATILE MEMORY CELL
- Publication number 20220037343
- Publication date Feb 3, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- LANXIANG WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT MEMORY CELL WITH A SHARED CONDUCTIVE WORD LINE AND METHODS...
- Publication number 20220037348
- Publication date Feb 3, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- YONGSHUN SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT MEMORY CELL WITH A SHARED CONDUCTIVE SELECT GATE AND METHOD...
- Publication number 20220037349
- Publication date Feb 3, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- YONGSHUN SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE TRANSISTOR TWO CAPACITORS NONVOLATILE MEMORY CELL
- Publication number 20210384204
- Publication date Dec 9, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- XINSHU CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR NON-VOLATILE MEMORY DEVICES
- Publication number 20210375895
- Publication date Dec 2, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- YONGSHUN SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALL EFFECT SENSOR DEVICES AND METHODS OF FORMING HALL EFFECT SENSO...
- Publication number 20210286025
- Publication date Sep 16, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yongshun SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR NON-VOLATILE MEMORY DEVICES
- Publication number 20210257377
- Publication date Aug 19, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- YONGSHUN SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALL EFFECT SENSORS WITH TUNABLE SENSITIVITY AND/OR RESISTANCE
- Publication number 20200292631
- Publication date Sep 17, 2020
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yongshun SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NON-VOLATILE MEMORY DEVICE
- Publication number 20190312046
- Publication date Oct 10, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Anson HERYANTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALL ELEMENT FOR 3-D SENSING AND METHOD FOR PRODUCING THE SAME
- Publication number 20190148624
- Publication date May 16, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALL ELEMENT FOR 3-D SENSING AND METHOD FOR PRODUCING THE SAME
- Publication number 20180198061
- Publication date Jul 12, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED HALL EFFECT SENSORS WITH VOLTAGE CONTROLLABLE SENSITIVITY
- Publication number 20170288131
- Publication date Oct 5, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yongshun SUN
- G01 - MEASURING TESTING

Yongshun SUN

Person

Patents Grantslast 30 patents

Multi-semiconductor layer photodetector and related method

On-chip current sensor

Nonvolatile memory device with a doped region between a source and...

Magnetic field sensor and methods of fabricating a magnetic field s...

Probe card integrated with a hall sensor

Semiconductor non-volatile memory devices

One transistor two capacitors nonvolatile memory cell

Hall effect sensors

Multi-finger gate nonvolatile memory cell

Partially silicided nonvolatile memory devices and integration schemes

Compact memory cell with a shared conductive select gate and method...

Memory structures and methods of forming memory structures

Hall effect sensor devices and methods of forming hall effect senso...

Compact memory cell with a shared conductive word line and methods...

Semiconductor non-volatile memory devices

Hall effect sensors with tunable sensitivity and/or resistance

Hall element for 3-D sensing and method for producing the same

Method for making non-volatile memory device

Integrated circuit devices including vertical and lateral hall elem...

Hall element for 3-D sensing and method for producing the same

Patents Applicationslast 30 patents

TRANSISTOR COUPLED TO TERMINALS FOR INJECTING CHARGE CARRIERS INTO...

ON-CHIP CURRENT SENSOR

PROBE CARD INTEGRATED WITH A HALL SENSOR

NONVOLATILE MEMORY DEVICE WITH A DOPED REGION BETWEEN A SOURCE AND...

MAGNETIC FIELD SENSOR AND METHODS OF FABRICATING A MAGNETIC FIELD S...

PARTIALLY SILICIDED NONVOLATILE MEMORY DEVICES AND INTEGRATION SCHEMES

MEMORY STRUCTURES AND METHODS OF FORMING MEMORY STRUCTURES

HALL EFFECT SENSORS

MULTI-FINGER GATE NONVOLATILE MEMORY CELL

COMPACT MEMORY CELL WITH A SHARED CONDUCTIVE WORD LINE AND METHODS...

COMPACT MEMORY CELL WITH A SHARED CONDUCTIVE SELECT GATE AND METHOD...

ONE TRANSISTOR TWO CAPACITORS NONVOLATILE MEMORY CELL

SEMICONDUCTOR NON-VOLATILE MEMORY DEVICES

HALL EFFECT SENSOR DEVICES AND METHODS OF FORMING HALL EFFECT SENSO...

SEMICONDUCTOR NON-VOLATILE MEMORY DEVICES

HALL EFFECT SENSORS WITH TUNABLE SENSITIVITY AND/OR RESISTANCE

METHOD FOR MAKING NON-VOLATILE MEMORY DEVICE

HALL ELEMENT FOR 3-D SENSING AND METHOD FOR PRODUCING THE SAME

HALL ELEMENT FOR 3-D SENSING AND METHOD FOR PRODUCING THE SAME

INTEGRATED HALL EFFECT SENSORS WITH VOLTAGE CONTROLLABLE SENSITIVITY