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Shanghai, CN
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Patents Grants
last 30 patents
Information
Patent Grant
Fabrication technology for metal gate
Patent number
10,276,450
Issue date
Apr 30, 2019
Shanghai Huali Microelectronics Corporation
Tong Lei
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Integration process of finFET spacer formation
Patent number
10,038,078
Issue date
Jul 31, 2018
Shanghai Huali Microelectronics Corporation
Hailan Yi
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
METHOD FOR MAKING ELEVATED SOURCE-DRAIN STRUCTURE OF PMOS IN FDSOI...
Publication number
20240030071
Publication date
Jan 25, 2024
Shanghai Huali Integrated Circuit Corporation
Yongyue Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for Manufacturing Isolation Structure of Hybrid Epitaxial Ar...
Publication number
20230132891
Publication date
May 4, 2023
Shanghai Huali Integrated Circuit Corporation
Yongyue Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Epitaxial Growth Method for FDSOI Hybrid Region
Publication number
20220415707
Publication date
Dec 29, 2022
Shanghai Huali Integrated Circuit Corporation
Yongyue Chen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FABRICATION TECHNOLOGY FOR METAL GATE
Publication number
20180174924
Publication date
Jun 21, 2018
SHANGHAI HUALI MICROELECTRONICS CORPORATION
Tong Lei
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
INTEGRATION PROCESS OF FINFET SPACER FORMATION
Publication number
20180175169
Publication date
Jun 21, 2018
SHANGHAI HUALI MICROELECTRONICS CORPORATION
Hailan Yi
H01 - BASIC ELECTRIC ELEMENTS