Yoshiaki Arai

Person

Ohmiya, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor single-crystal growth system
- Patent number 6,261,364
- Issue date Jul 17, 2001
- Mitsubishi Materials Corporation
- Yoshiaki Arai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heat exchanger recycling method and crushing apparatus used for the...
- Patent number 5,918,820
- Issue date Jul 6, 1999
- Mitsubishi Materials Corporation
- Yasunari Ikeda
- B02 - CRUSHING, PULVERISING, OR DISINTEGRATING PREPARATORY TREATMENT OF GRAIN...
Information Patent Grant
Method for growing a semiconductor single-crystal
- Patent number 5,858,085
- Issue date Jan 12, 1999
- Mitsubishi Materials Corporation
- Yoshiaki Arai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor single-crystal growth system
- Patent number 5,720,810
- Issue date Feb 24, 1998
- Mitsubishi Materials Corporation
- Yoshiaki Arai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Double crucible for growing a silicon single crystal
- Patent number 5,474,022
- Issue date Dec 12, 1995
- Mitsubishi Materials Corporation
- Keisei Abe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing single crystals
- Patent number 5,306,474
- Issue date Apr 26, 1994
- Mitsubishi Materials Corporation
- Michio Kida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for process for growing crystals of semiconductor materials
- Patent number 5,196,173
- Issue date Mar 23, 1993
- Mitsubishi Materials Corporation
- Yoshiaki Arai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing crystals
- Patent number 5,080,873
- Issue date Jan 14, 1992
- Mitsubishi Materials Corporation
- Naoki Ono
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and process for growing crystals of semiconductor materials
- Patent number 5,009,862
- Issue date Apr 23, 1991
- Mitsubishi Kinzoku Kabushiki Kaisha
- Michio Kida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for pulling single crystals
- Patent number 4,980,015
- Issue date Dec 25, 1990
- Mitsubishi Metal Corporation
- Naoki Ono
- C30 - CRYSTAL GROWTH
Information Patent Grant
Czochraski process for growing crystals using double wall crucible
- Patent number 4,936,949
- Issue date Jun 26, 1990
- Mitsubishi Kinzoku Kabushiki Kaisha
- Michio Kida
- C30 - CRYSTAL GROWTH

Yoshiaki Arai

Person

Patents Grantslast 30 patents

Semiconductor single-crystal growth system

Heat exchanger recycling method and crushing apparatus used for the...

Method for growing a semiconductor single-crystal

Semiconductor single-crystal growth system

Double crucible for growing a silicon single crystal

Apparatus for growing single crystals

Apparatus for process for growing crystals of semiconductor materials

Apparatus for growing crystals

Apparatus and process for growing crystals of semiconductor materials

Method for pulling single crystals

Czochraski process for growing crystals using double wall crucible