Yoshiaki FUKUZUMI

Person

Kanagawa-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus containing memory array structures having multiple sub-bl...
- Patent number 12,112,805
- Issue date Oct 8, 2024
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Microelectronic devices, and related memory devices and electronic...
- Patent number 12,101,932
- Issue date Sep 24, 2024
- Micron Technology, Inc.
- Erwin E. Yu
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Memory device including in-tier driver circuit
- Patent number 12,100,454
- Issue date Sep 24, 2024
- Micron Technology, Inc.
- Jun Fujiki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and method for manufacturing the same
- Patent number 12,089,410
- Issue date Sep 10, 2024
- Kioxia Corporation
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming integrated circuit structures for capacitive sen...
- Patent number 12,080,356
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory
- Patent number 12,069,855
- Issue date Aug 20, 2024
- Kioxia Corporation
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive erase pulse width modulation based on erase suspend during...
- Patent number 12,068,036
- Issue date Aug 20, 2024
- Micron Technology, Inc.
- Jiun-horng Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor storage device and method of manufacturi...
- Patent number 12,058,862
- Issue date Aug 6, 2024
- Kioxia Corporation
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device
- Patent number 11,980,031
- Issue date May 7, 2024
- Kioxia Corporation
- Takashi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices comprising a dielectric material, and related sy...
- Patent number 11,948,992
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- Michael A. Lindemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND flash memory devices and related electronic systems
- Patent number 11,908,512
- Issue date Feb 20, 2024
- Micron Technology, Inc.
- Tomoharu Tanaka
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method for reading data of a first memory cell transistor of a nonv...
- Patent number 11,903,205
- Issue date Feb 13, 2024
- Kioxia Corporation
- Masaru Kito
- G11 - INFORMATION STORAGE
Information Patent Grant
Microelectronic devices including tiered stacks including conductiv...
- Patent number 11,903,196
- Issue date Feb 13, 2024
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
Information Patent Grant
Method for writing data of a first memory cell transistor of a nonv...
- Patent number 11,903,207
- Issue date Feb 13, 2024
- Kioxia Corporation
- Masaru Kito
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device including integrated control circuit an...
- Patent number 11,871,576
- Issue date Jan 9, 2024
- Kioxia Corporation
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor storage device and method of manufacturi...
- Patent number 11,844,218
- Issue date Dec 12, 2023
- Kioxia Corporation
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Microelectronic devices including isolation structures protruding i...
- Patent number 11,800,717
- Issue date Oct 24, 2023
- Matthew J. King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device and method for manufacturin...
- Patent number 11,792,992
- Issue date Oct 17, 2023
- Kioxia Corporation
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices including multiplexer devices, and related electroni...
- Patent number 11,778,827
- Issue date Oct 3, 2023
- Micron Technology, Inc.
- Koichi Kawai
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device having at least one metal and one semico...
- Patent number 11,765,904
- Issue date Sep 19, 2023
- Kioxia Corporation
- Masaki Tsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing the same
- Patent number 11,744,075
- Issue date Aug 29, 2023
- Kioxia Corporation
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array structures for capacitive sense NAND memory
- Patent number 11,678,482
- Issue date Jun 13, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sense line structures in capacitive sense NAND memory
- Patent number 11,670,379
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Access operations in capacitive sense NAND memory
- Patent number 11,657,880
- Issue date May 23, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having a pad proximate to a step structure sec...
- Patent number 11,594,547
- Issue date Feb 28, 2023
- Kioxia Corporation
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor storage device and method of manufacturi...
- Patent number 11,574,926
- Issue date Feb 7, 2023
- Kioxia Corporation
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Microelectronic devices, and related memory devices and electronic...
- Patent number 11,562,785
- Issue date Jan 24, 2023
- Micron Technology, Inc.
- Tomoharu Tanaka
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Integrated assemblies, and methods of forming integrated assemblies
- Patent number 11,514,953
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device having at least one metal body and one s...
- Patent number 11,482,537
- Issue date Oct 25, 2022
- Kioxia Corporation
- Masaki Tsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitive sense NAND memory
- Patent number 11,437,106
- Issue date Sep 6, 2022
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICES AND ELECTRONIC SYSTEMS
- Publication number 20250008727
- Publication date Jan 2, 2025
- Micron Technology, Inc.
- Erwin E. Yu
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
APPARATUS CONTAINING MEMORY ARRAY STRUCTURES HAVING MULTIPLE SUB-BL...
- Publication number 20240420770
- Publication date Dec 19, 2024
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING VERTICAL PLANAR MEMORY CELL STRUC...
- Publication number 20240422977
- Publication date Dec 19, 2024
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
Information Patent Application
MEMORY DEVICE INCLUDING IN-TIER DRIVER CIRCUIT
- Publication number 20240420766
- Publication date Dec 19, 2024
- MICRON TECHNOLOGY, INC.
- Jun Fujiki
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS FOR CAPACITIVE SENSE NAND MEMORY
- Publication number 20240412790
- Publication date Dec 12, 2024
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240397721
- Publication date Nov 28, 2024
- KIOXIA Corporation
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURI...
- Publication number 20240365549
- Publication date Oct 31, 2024
- KIOXIA Corporation
- Yoshiaki FUKUZUMI
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS TO INCREASE CELL DENSITY USING A LATERAL ETCH
- Publication number 20240357815
- Publication date Oct 24, 2024
- Micron Technology, Inc.
- Paolo Fantini
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING VERTICAL PLANAR MEMORY CELL STRUC...
- Publication number 20240334700
- Publication date Oct 3, 2024
- Micro Technology, Inc.
- Yoshiaki Fukuzumi
Information Patent Application
MERGED CAVITIES FOR CONDUCTOR FORMATION IN A MEMORY DIE
- Publication number 20240284672
- Publication date Aug 22, 2024
- Micron Technology, Inc.
- David H. Wells
Information Patent Application
DYNAMIC ERASE VOLTAGE STEP
- Publication number 20240281148
- Publication date Aug 22, 2024
- Micron Technology, Inc.
- Jiun-Horng Lai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CAPACITIVE SENSING WITH A MICRO PUMP IN A MEMORY DEVICE
- Publication number 20240257842
- Publication date Aug 1, 2024
- MICRON TECHNOLOGY, INC.
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE
- Publication number 20240251559
- Publication date Jul 25, 2024
- KIOXIA Corporation
- Takashi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES COMPRISING A STACK STRUCTURE, A SOURCE CONTACT,...
- Publication number 20240162325
- Publication date May 16, 2024
- Micron Technology, Inc.
- Michael A. Lindemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD TH...
- Publication number 20240138150
- Publication date Apr 25, 2024
- KIOXIA Corporation
- Masaru KITO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES AND RELATED ELECTRONIC SYSTEMS
- Publication number 20240099007
- Publication date Mar 21, 2024
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240099013
- Publication date Mar 21, 2024
- KIOXIA Corporation
- Yoshiaki FUKUZUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAYS HAVING MULTIPLE STRINGS OF SERIES-CONNECTED MEMORY CE...
- Publication number 20240079058
- Publication date Mar 7, 2024
- Micron Technology, Inc.
- Jun Fujiki
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED...
- Publication number 20240074184
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Masaaki Higuchi
- G11 - INFORMATION STORAGE
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING PILLARS WITH PARTIALLY-CIRCULAR U...
- Publication number 20240057337
- Publication date Feb 15, 2024
- Lodestar Licensing Group LLC
- Matthew J. King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL ETCH STOPS FOR ACCESS LINE FORMATION IN A MEMORY DIE
- Publication number 20240040787
- Publication date Feb 1, 2024
- Micron Technology, Inc.
- Raja Kumar Varma Manthena
- G11 - INFORMATION STORAGE
Information Patent Application
ISOLATION REGIONS WITHIN A MEMORY DIE
- Publication number 20240038577
- Publication date Feb 1, 2024
- Micron Technology, Inc.
- Raja Kumar Varma Manthena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES AND ELECTRONIC...
- Publication number 20240021219
- Publication date Jan 18, 2024
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURIN...
- Publication number 20240008276
- Publication date Jan 4, 2024
- KIOXIA Corporation
- Yoshiaki FUKUZUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADAPTIVE ERASE PULSE WIDTH MODULATION BASED ON ERASE SUSPEND DURING...
- Publication number 20230402103
- Publication date Dec 14, 2023
- Micron Technology, Inc.
- Jiun-horng Lai
- G11 - INFORMATION STORAGE
Information Patent Application
MERGED CAVITIES AND BURIED ETCH STOPS FOR THREE-DIMENSIONAL MEMORY...
- Publication number 20230397422
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE
- Publication number 20230395422
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR CONCURRENTLY-FORMED CAVITIES IN THREE-DIMENSIONAL ME...
- Publication number 20230395511
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20230389319
- Publication date Nov 30, 2023
- KIOXIA Corporation
- Masaki Tsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230363167
- Publication date Nov 9, 2023
- KIOXIA Corporation
- Yoshiaki Fukuzumi
- H01 - BASIC ELECTRIC ELEMENTS

Yoshiaki FUKUZUMI

Person

Patents Grantslast 30 patents

Apparatus containing memory array structures having multiple sub-bl...

Microelectronic devices, and related memory devices and electronic...

Memory device including in-tier driver circuit

Semiconductor memory device and method for manufacturing the same

Methods of forming integrated circuit structures for capacitive sen...

Semiconductor memory

Adaptive erase pulse width modulation based on erase suspend during...

Non-volatile semiconductor storage device and method of manufacturi...

Non-volatile memory device

Electronic devices comprising a dielectric material, and related sy...

3D NAND flash memory devices and related electronic systems

Method for reading data of a first memory cell transistor of a nonv...

Microelectronic devices including tiered stacks including conductiv...

Method for writing data of a first memory cell transistor of a nonv...

Semiconductor memory device including integrated control circuit an...

Non-volatile semiconductor storage device and method of manufacturi...

Microelectronic devices including isolation structures protruding i...

Nonvolatile semiconductor memory device and method for manufacturin...

Memory devices including multiplexer devices, and related electroni...

Non-volatile memory device having at least one metal and one semico...

Semiconductor memory device and method for manufacturing the same

Memory array structures for capacitive sense NAND memory

Sense line structures in capacitive sense NAND memory

Access operations in capacitive sense NAND memory

Semiconductor device having a pad proximate to a step structure sec...

Non-volatile semiconductor storage device and method of manufacturi...

Microelectronic devices, and related memory devices and electronic...

Integrated assemblies, and methods of forming integrated assemblies

Non-volatile memory device having at least one metal body and one s...

Capacitive sense NAND memory

Patents Applicationslast 30 patents

MEMORY DEVICES AND ELECTRONIC SYSTEMS

APPARATUS CONTAINING MEMORY ARRAY STRUCTURES HAVING MULTIPLE SUB-BL...

MICROELECTRONIC DEVICES INCLUDING VERTICAL PLANAR MEMORY CELL STRUC...

MEMORY DEVICE INCLUDING IN-TIER DRIVER CIRCUIT

APPARATUS FOR CAPACITIVE SENSE NAND MEMORY

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURI...

METHODS TO INCREASE CELL DENSITY USING A LATERAL ETCH

MICROELECTRONIC DEVICES INCLUDING VERTICAL PLANAR MEMORY CELL STRUC...

MERGED CAVITIES FOR CONDUCTOR FORMATION IN A MEMORY DIE

DYNAMIC ERASE VOLTAGE STEP

CAPACITIVE SENSING WITH A MICRO PUMP IN A MEMORY DEVICE

NON-VOLATILE MEMORY DEVICE

ELECTRONIC DEVICES COMPRISING A STACK STRUCTURE, A SOURCE CONTACT,...

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD TH...

MEMORY DEVICES AND RELATED ELECTRONIC SYSTEMS

SEMICONDUCTOR MEMORY DEVICE

MEMORY ARRAYS HAVING MULTIPLE STRINGS OF SERIES-CONNECTED MEMORY CE...

ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED...

MICROELECTRONIC DEVICES INCLUDING PILLARS WITH PARTIALLY-CIRCULAR U...

LATERAL ETCH STOPS FOR ACCESS LINE FORMATION IN A MEMORY DIE

ISOLATION REGIONS WITHIN A MEMORY DIE

MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES AND ELECTRONIC...

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURIN...

ADAPTIVE ERASE PULSE WIDTH MODULATION BASED ON ERASE SUSPEND DURING...

MERGED CAVITIES AND BURIED ETCH STOPS FOR THREE-DIMENSIONAL MEMORY...

SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE

TECHNIQUES FOR CONCURRENTLY-FORMED CAVITIES IN THREE-DIMENSIONAL ME...

NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING SAME

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME