Yoshiaki Hisamoto

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device having an active region and an electric...
- Patent number 8,742,474
- Issue date Jun 3, 2014
- Mitsubishi Electric Corporation
- Yoshiaki Hisamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with peripheral base region connected to main...
- Patent number 8,692,323
- Issue date Apr 8, 2014
- Mitsubishi Denki Kabushiki Kaisha
- Kazunari Hatade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,274,095
- Issue date Sep 25, 2012
- Mitsubishi Electric Corporation
- Yoshiaki Hisamoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device
- Patent number 8,183,631
- Issue date May 22, 2012
- Mitsubishi Denki Kabushiki Kaisha
- Kazunari Hatade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with increased withstand voltage
- Patent number 8,017,974
- Issue date Sep 13, 2011
- Mitsubishi Electric Corporation
- Yoshiaki Hisamoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device having enhanced di/dt tolerance and dV/dt tole...
- Patent number 7,180,106
- Issue date Feb 20, 2007
- Mitsubishi Denki Kabushiki Kaisha
- Kazunari Hatade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device containing at least one zener diode prov...
- Patent number 6,580,121
- Issue date Jun 17, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Yoshiaki Hisamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating insulated gate semiconductor device
- Patent number 5,545,573
- Issue date Aug 13, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Atsushi Narazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and method of fabricating the same
- Patent number 5,321,295
- Issue date Jun 14, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Yoshiaki Hisamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a polycrystal...
- Patent number 5,246,877
- Issue date Sep 21, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Yoshiaki Hisamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turn-off thyristor having P.sup.+ gate and emitter
- Patent number 4,609,933
- Issue date Sep 2, 1986
- Mitsubishi Denki Kabushiki Kaisha
- Toshihiro Nakajima
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120080744
- Publication date Apr 5, 2012
- Mitsubishi Electric Corporation
- KAZUNARI HATADE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20110227128
- Publication date Sep 22, 2011
- MITSUBISHI ELECTRIC CORPORATION
- Yoshiaki HISAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090184338
- Publication date Jul 23, 2009
- MITSUBISHI ELECTRIC CORPORATION
- Yoshiaki HISAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20090014753
- Publication date Jan 15, 2009
- MITSUBISHI ELECTRIC CORPORATION
- Yoshiaki Hisamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20070096166
- Publication date May 3, 2007
- MITSUBISHI ELECTRIC CORPORATION
- KAZUNARI HATADE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20030132499
- Publication date Jul 17, 2003
- Kazunari Hatade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device containing at least one zener diode prov...
- Publication number 20020088991
- Publication date Jul 11, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yoshiaki Hisamoto
- H01 - BASIC ELECTRIC ELEMENTS

Yoshiaki Hisamoto

Person

Patents Grantslast 30 patents

Power semiconductor device having an active region and an electric...

Semiconductor device with peripheral base region connected to main...

Semiconductor device

Semiconductor device

Semiconductor device with increased withstand voltage

Semiconductor device having enhanced di/dt tolerance and dV/dt tole...

Power semiconductor device containing at least one zener diode prov...

Method of fabricating insulated gate semiconductor device

Insulated gate bipolar transistor and method of fabricating the same

Method of manufacturing a semiconductor device having a polycrystal...

Gate turn-off thyristor having P.sup.+ gate and emitter

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE

Semiconductor device

Power semiconductor device containing at least one zener diode prov...