Yoshiaki SAITO

Person

Sendai-shi, Miyagi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive effect element and magnetic memory
- Patent number 11,631,804
- Issue date Apr 18, 2023
- Tohoku University
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element, magnetic memory device, and writing and r...
- Patent number 11,610,614
- Issue date Mar 21, 2023
- TOHOKU UNIVERSITY
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic laminated film, magnetic memory element, and magnetic memory
- Patent number 11,532,667
- Issue date Dec 20, 2022
- TOHOKU UNIVERSITY
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device with write current flowing simultaneously th...
- Patent number 11,468,932
- Issue date Oct 11, 2022
- TOHOKU UNIVERSITY
- Tetsuo Endoh
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element, magnetic memory array, magnetic m...
- Patent number 11,430,498
- Issue date Aug 30, 2022
- TOHOKU UNIVERSITY
- Yoshiaki Saito
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
TUNNEL JUNCTION LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNET...
- Publication number 20240284803
- Publication date Aug 22, 2024
- Tohoku University
- Tetsuo Endoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY AND ARTIFICIAL INT...
- Publication number 20240244983
- Publication date Jul 18, 2024
- TOHOKU UNIVERSITY
- Yoshiaki Saito
Information Patent Application
MAGNETIC LAMINATED FILM, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY,...
- Publication number 20230028652
- Publication date Jan 26, 2023
- TOHOKU UNIVERSITY
- Yoshiaki SAITO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNETIC MEMORY
- Publication number 20220115440
- Publication date Apr 14, 2022
- Tohoku University
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC FILM, MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20220052111
- Publication date Feb 17, 2022
- TOHOKU UNIVERSITY
- Yoshiaki SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY ARRAY, MAGNETIC M...
- Publication number 20210233577
- Publication date Jul 29, 2021
- Tohoku University
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY DEVICE, AND WRITING AND R...
- Publication number 20210158849
- Publication date May 27, 2021
- Tohoku University
- Yoshiaki Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20210125654
- Publication date Apr 29, 2021
- Tohoku University
- Tetsuo Endoh
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20210074910
- Publication date Mar 11, 2021
- TOHOKU UNIVERSITY
- Yoshiaki SAITO
- G11 - INFORMATION STORAGE

Yoshiaki SAITO

Person

Patents Grantslast 30 patents

Magnetoresistive effect element and magnetic memory

Magnetoresistive element, magnetic memory device, and writing and r...

Magnetic laminated film, magnetic memory element, and magnetic memory

Magnetic memory device with write current flowing simultaneously th...

Magnetoresistance effect element, magnetic memory array, magnetic m...

Patents Applicationslast 30 patents

TUNNEL JUNCTION LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNET...

MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY AND ARTIFICIAL INT...

MAGNETIC LAMINATED FILM, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY,...

MAGNETIC LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNETIC MEMORY

MAGNETIC FILM, MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY ARRAY, MAGNETIC M...

MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY DEVICE, AND WRITING AND R...

MAGNETIC MEMORY DEVICE

MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY