Yoshida Makoto

Person

Gyeonggi-do, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Recessed transistor and method of manufacturing the same
- Patent number 9,012,982
- Issue date Apr 21, 2015
- Samsung Electronics Co., Ltd.
- Keun-Nam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical type integrated circuit devices and memory devices includi...
- Patent number 8,791,526
- Issue date Jul 29, 2014
- Samsung Electronics Co., Ltd.
- Jae-man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including storage node landing pads separated...
- Patent number 8,779,487
- Issue date Jul 15, 2014
- Samsung Electronics Co., Ltd.
- Yong-il Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor and method for forming the same
- Patent number 8,664,064
- Issue date Mar 4, 2014
- Samsung Electronics Co., Ltd.
- Keunnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating FinFET devices
- Patent number 8,497,175
- Issue date Jul 30, 2013
- Samsung Electronics Co., Ltd.
- Jae-Rok Kahng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including contact plug and associated methods
- Patent number 8,264,022
- Issue date Sep 11, 2012
- Samsung Electronics Co., Ltd.
- Jae-man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 8,120,123
- Issue date Feb 21, 2012
- Samsung Electronics Co., Ltd.
- Makoto Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices including storage node...
- Patent number 8,003,514
- Issue date Aug 23, 2011
- Samsung Electronics Co., Ltd.
- Yong-il Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a fine pattern of a semiconductor device using a...
- Patent number 7,977,204
- Issue date Jul 12, 2011
- Samsung Electronics Co., Ltd.
- Yong-il Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices having multiple channe...
- Patent number 7,952,140
- Issue date May 31, 2011
- Samsung Electronics Co., Ltd.
- Se-Myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device for reducing thermal bur...
- Patent number 7,879,703
- Issue date Feb 1, 2011
- Samsung Electronics Co., Ltd.
- Kyoung-Ho Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor and method for forming the same
- Patent number 7,863,683
- Issue date Jan 4, 2011
- Samsung Electronics Co., Ltd.
- Keunnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing semiconductor devices with local recess ch...
- Patent number 7,842,572
- Issue date Nov 30, 2010
- Samsung Electronics Co., Ltd.
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,728,381
- Issue date Jun 1, 2010
- Samsung Electronics Co., Ltd.
- Jae-Rok Kahng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including isolation pr...
- Patent number 7,709,335
- Issue date May 4, 2010
- Samsung Electronics Co., Ltd.
- Yong-il Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating multiple FETs of different types
- Patent number 7,700,445
- Issue date Apr 20, 2010
- Samsung Electronics Co., Ltd.
- Se-Myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices having multiple channe...
- Patent number 7,691,689
- Issue date Apr 6, 2010
- Samsung Electronics Co., Ltd.
- Se-Myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including active pattern with channel recess,...
- Patent number 7,667,266
- Issue date Feb 23, 2010
- Samsung Electronics Co., Ltd.
- Kyoung-Ho Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with local recess channel transistors and met...
- Patent number 7,586,150
- Issue date Sep 8, 2009
- Samsung Electronic Co., Ltd.
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bitline of semiconductor device having stud type capping layer and...
- Patent number 7,473,954
- Issue date Jan 6, 2009
- Samsung Electronics Co., Ltd.
- Mun-Mo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate field effect transistor and method of manufacturing the...
- Patent number 7,288,823
- Issue date Oct 30, 2007
- Samsung Electronics Co., Ltd.
- Jae-Mun Youn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a transistor
- Patent number 7,265,011
- Issue date Sep 4, 2007
- Samsung Electronics Co., Ltd.
- Jae-Man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate field effect transistor and method of manufacturing the...
- Patent number 7,015,106
- Issue date Mar 21, 2006
- Samsung Electronics Co., Ltd.
- Jae-Man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bitline of semiconductor device having stud type capping layer and...
- Patent number 6,982,199
- Issue date Jan 3, 2006
- Samsung Electronics Co., Ltd.
- Mun-Mo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor integrated circuit device and t...
- Patent number 6,849,885
- Issue date Feb 1, 2005
- Renesas Technology Corp.
- Hiroyuki Enomoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor integrated circuit device and t...
- Patent number 6,482,727
- Issue date Nov 19, 2002
- Hitachi, Ltd.
- Hiroyuki Enomoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING STORAGE NODE LANDING PADS SEPARATED...
- Publication number 20110266602
- Publication date Nov 3, 2011
- Yong-il KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TYPE INTEGRATED CIRCUIT DEVICES, MEMORY DEVICES, AND METHO...
- Publication number 20110095350
- Publication date Apr 28, 2011
- SAMSUNG ELECTRONICS CO., LTD.
- Jae-man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin field effect transistor and method for forming the same
- Publication number 20110092039
- Publication date Apr 21, 2011
- Keunnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including contact plug and associated methods
- Publication number 20100207241
- Publication date Aug 19, 2010
- Jae-man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20100200933
- Publication date Aug 12, 2010
- Samsung Electronics Co., Ltd.
- Jae-Rok KAHNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of forming the same
- Publication number 20100193880
- Publication date Aug 5, 2010
- Makoto Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A FINE PATTERN OF A SEMICONUCTOR DEVICE USING A D...
- Publication number 20100151655
- Publication date Jun 17, 2010
- Samsung Electronics Co., Ltd.
- Yong-il KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING MULTIPLE CHANNE...
- Publication number 20100140692
- Publication date Jun 10, 2010
- Samsung Electronics Co., Ltd.
- Se-Myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES WITH LOCAL RECESS CH...
- Publication number 20090291541
- Publication date Nov 26, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- SE-MYEONG JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING STORAGE NODE...
- Publication number 20090258488
- Publication date Oct 15, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Yong-il Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE FOR REDUCING THERMAL BUR...
- Publication number 20090186471
- Publication date Jul 23, 2009
- Samsung Electronics Co., Ltd.
- Kyoung-Ho Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device including isolation pr...
- Publication number 20090181510
- Publication date Jul 16, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Yong-il Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN WITH CHANNEL RECESS,...
- Publication number 20080303085
- Publication date Dec 11, 2008
- Samsung Electronics Co., Ltd.
- Kyoung-Ho JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recessed transistor and method of manufacturing the same
- Publication number 20080185641
- Publication date Aug 7, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Keun-Nam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM devices including fin transistors and methods of operating the...
- Publication number 20080084731
- Publication date Apr 10, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Chul Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Method for fabricating multiple FETs of different types
- Publication number 20070298599
- Publication date Dec 27, 2007
- Se-Myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin field effect transistor and method for forming the same
- Publication number 20070278576
- Publication date Dec 6, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Keunnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin field effect transistor and method for forming the same
- Publication number 20070267676
- Publication date Nov 22, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Keunnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20070235785
- Publication date Oct 11, 2007
- Samsung Electronics Co., Ltd.
- Jae-Rok KAHNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of fabricating semiconductor devices having multiple channe...
- Publication number 20070105334
- Publication date May 10, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Se-Myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double gate field effect transistor and method of manufacturing the...
- Publication number 20060134868
- Publication date Jun 22, 2006
- Samsung Electronics Co., Ltd.
- Jae-Man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices with local recess channel transistors and met...
- Publication number 20060049455
- Publication date Mar 9, 2006
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device gate structure and method of forming the same
- Publication number 20050184348
- Publication date Aug 25, 2005
- Jae-Man Youn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double gate field effect transistor and method of manufacturing the...
- Publication number 20050056888
- Publication date Mar 17, 2005
- Jae-Man Youn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a transistor
- Publication number 20050048729
- Publication date Mar 3, 2005
- Jae-Man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of producing a semiconductor integrated circuit device and t...
- Publication number 20040121607
- Publication date Jun 24, 2004
- Hitachi, Ltd.
- Hiroyuki Enomoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bitline of semiconductor device having stud type capping layer and...
- Publication number 20040056247
- Publication date Mar 25, 2004
- Mun-Mo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of producing a semiconductor integrated circuit device and t...
- Publication number 20030045065
- Publication date Mar 6, 2003
- Hitachi, Ltd.
- Hiroyuki Enomoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of producing a semiconductor integrated circuit device and t...
- Publication number 20020094610
- Publication date Jul 18, 2002
- Hitachi, Ltd.
- Hiroyuki Enomoto
- H01 - BASIC ELECTRIC ELEMENTS

Yoshida Makoto

Person

Patents Grantslast 30 patents

Recessed transistor and method of manufacturing the same

Vertical type integrated circuit devices and memory devices includi...

Semiconductor devices including storage node landing pads separated...

Fin field effect transistor and method for forming the same

Method of fabricating FinFET devices

Semiconductor device including contact plug and associated methods

Semiconductor device and method of forming the same

Methods of fabricating semiconductor devices including storage node...

Method of forming a fine pattern of a semiconductor device using a...

Methods of fabricating semiconductor devices having multiple channe...

Method of fabricating semiconductor device for reducing thermal bur...

Fin field effect transistor and method for forming the same

Methods of manufacturing semiconductor devices with local recess ch...

Semiconductor device and method of fabricating the same

Method of manufacturing semiconductor device including isolation pr...

Method for fabricating multiple FETs of different types

Methods of fabricating semiconductor devices having multiple channe...

Semiconductor device including active pattern with channel recess,...

Semiconductor devices with local recess channel transistors and met...

Bitline of semiconductor device having stud type capping layer and...

Double gate field effect transistor and method of manufacturing the...

Method of manufacturing a transistor

Double gate field effect transistor and method of manufacturing the...

Bitline of semiconductor device having stud type capping layer and...

Method of producing a semiconductor integrated circuit device and t...

Method of producing a semiconductor integrated circuit device and t...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES INCLUDING STORAGE NODE LANDING PADS SEPARATED...

VERTICAL TYPE INTEGRATED CIRCUIT DEVICES, MEMORY DEVICES, AND METHO...

Fin field effect transistor and method for forming the same

Semiconductor device including contact plug and associated methods

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Semiconductor device and method of forming the same

METHOD OF FORMING A FINE PATTERN OF A SEMICONUCTOR DEVICE USING A D...

METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING MULTIPLE CHANNE...

METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES WITH LOCAL RECESS CH...

METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING STORAGE NODE...

METHOD OF FABRICATING SEMICONDUCTOR DEVICE FOR REDUCING THERMAL BUR...

Method of manufacturing semiconductor device including isolation pr...

SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN WITH CHANNEL RECESS,...

Recessed transistor and method of manufacturing the same

DRAM devices including fin transistors and methods of operating the...

Method for fabricating multiple FETs of different types

Fin field effect transistor and method for forming the same

Fin field effect transistor and method for forming the same

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Methods of fabricating semiconductor devices having multiple channe...

Double gate field effect transistor and method of manufacturing the...

Semiconductor devices with local recess channel transistors and met...

Semiconductor device gate structure and method of forming the same

Double gate field effect transistor and method of manufacturing the...

Method of manufacturing a transistor

Method of producing a semiconductor integrated circuit device and t...

Bitline of semiconductor device having stud type capping layer and...

Method of producing a semiconductor integrated circuit device and t...

Method of producing a semiconductor integrated circuit device and t...