Yoshifumi TOMOMATSU

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device that facilitates a reduction in the occurrence...
- Patent number 10,347,725
- Issue date Jul 9, 2019
- Mitsubishi Electric Corporation
- Akihiko Nobukuni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,972,618
- Issue date May 15, 2018
- Mitsubishi Electric Corporation
- Hideki Haruguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,791,568
- Issue date Jul 29, 2014
- Mitsubishi Electric Corporation
- Seiya Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an enlarged emitter electrode
- Patent number 8,294,244
- Issue date Oct 23, 2012
- Mitsubishi Electric Corporation
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,178,947
- Issue date May 15, 2012
- Mitsubishi Electric Corporation
- Tetsuo Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,986,003
- Issue date Jul 26, 2011
- Mitsubishi Electric Corporation
- Shinji Aono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an insulated gate bipolar transistor an...
- Patent number 7,768,101
- Issue date Aug 3, 2010
- Mitsubishi Electric Corporation
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device preventing recovery breakdown and manufacturin...
- Patent number 7,705,398
- Issue date Apr 27, 2010
- Mitsubishi Electric Corporation
- Mitsuru Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device
- Patent number 7,211,837
- Issue date May 1, 2007
- Mitsubishi Denki Kabushiki Kaisha
- Yoshifumi Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device for realizing low gate capacity...
- Patent number 6,781,200
- Issue date Aug 24, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Youichi Ishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor, semiconductor device, method of...
- Patent number 6,734,497
- Issue date May 11, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Hideki Takahashi
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Manufacturing process of pn junction diode device and pn junction d...
- Patent number 6,709,914
- Issue date Mar 23, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Ishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar semiconductor device transistor with a ladde...
- Patent number 6,683,348
- Issue date Jan 27, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Hideki Haruguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,680,513
- Issue date Jan 20, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Yoshifumi Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Overcurrent control circuit of power semiconductor device
- Patent number 6,633,473
- Issue date Oct 14, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Yoshifumi Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect semiconductor device and its production method
- Patent number 6,541,826
- Issue date Apr 1, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Toru Iwagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with temperature detector
- Patent number 6,486,523
- Issue date Nov 26, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yoshifumi Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,472,693
- Issue date Oct 29, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Hideki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 6,229,196
- Issue date May 8, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Nobuyasu Shishido
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for preventing destruction during a turn-off s...
- Patent number 5,945,691
- Issue date Aug 31, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Yoshifumi Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect type semiconductor device and manufacturing method the...
- Patent number 5,729,032
- Issue date Mar 17, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Yoshifumi Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device with improved short-circuit tol...
- Patent number 5,489,788
- Issue date Feb 6, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Yoshifumi Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an insulated gate semiconductor device
- Patent number 5,451,531
- Issue date Sep 19, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Hiroshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having stable breakdown voltage in wiring area
- Patent number 5,355,003
- Issue date Oct 11, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Yoshifumi Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device and method of fabricating same
- Patent number 5,321,281
- Issue date Jun 14, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Hiroshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SCHOTTKY BARRIER DIODE
- Publication number 20220376073
- Publication date Nov 24, 2022
- Mitsubishi Electric Corporation
- Seiya NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170162562
- Publication date Jun 8, 2017
- Mitsubishi Electric Corporation
- Hideki HARUGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160380068
- Publication date Dec 29, 2016
- Mitsubishi Electric Corporation
- Akihiko NOBUKUNI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120306079
- Publication date Dec 6, 2012
- MITSUBISHI ELECTRIC CORPORATION
- Seiya NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110049562
- Publication date Mar 3, 2011
- MITSUBISHI ELECTRIC CORPORATION
- Kenji SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090283797
- Publication date Nov 19, 2009
- MITSUBISHI ELECTRIC CORPORATION
- Tetsuo TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20080197379
- Publication date Aug 21, 2008
- MITSUBISHI ELECTRIC CORPORATION
- Shinji AONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20080102576
- Publication date May 1, 2008
- MITSUBISHI ELECTRIC CORPORATION
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20080093697
- Publication date Apr 24, 2008
- MITSUBISHI ELECTRIC CORPORATION
- Mitsuru Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate semiconductor device having a clamping element to cl...
- Publication number 20070069252
- Publication date Mar 29, 2007
- Mitsubishi Denki Kabushiki Kaisha
- Chihiro Tadokoro
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Insulated gate semiconductor device
- Publication number 20050263853
- Publication date Dec 1, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Yoshifumi Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT module
- Publication number 20050194660
- Publication date Sep 8, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Kouichi Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing thereof
- Publication number 20050122748
- Publication date Jun 9, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Chihiro Tadokoro
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device
- Publication number 20030146493
- Publication date Aug 7, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Yoshifumi Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing process of pn junction diode device and pn junction d...
- Publication number 20030141513
- Publication date Jul 31, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Ishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate semiconductor device and method of manufacturing the...
- Publication number 20030141542
- Publication date Jul 31, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Youichi Ishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate bipolar transistor, semiconductor device, method of...
- Publication number 20030042575
- Publication date Mar 6, 2003
- Hideki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including insulating substrate formed of singl...
- Publication number 20020149055
- Publication date Oct 17, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yoshifumi Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device with temperature detector
- Publication number 20020135037
- Publication date Sep 26, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yoshifumi Tomomatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect semiconductor device and its production method
- Publication number 20020113274
- Publication date Aug 22, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Toru Iwagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-effect semiconductor device
- Publication number 20020109183
- Publication date Aug 15, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Youichi Ishimura
- H01 - BASIC ELECTRIC ELEMENTS

Yoshifumi TOMOMATSU

Person

Patents Grantslast 30 patents

Semiconductor device that facilitates a reduction in the occurrence...

Semiconductor device

Semiconductor device

Semiconductor device having an enlarged emitter electrode

Semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device having an insulated gate bipolar transistor an...

Semiconductor device preventing recovery breakdown and manufacturin...

Insulated gate semiconductor device

Insulated gate semiconductor device for realizing low gate capacity...

Insulated gate bipolar transistor, semiconductor device, method of...

Manufacturing process of pn junction diode device and pn junction d...

Insulated gate bipolar semiconductor device transistor with a ladde...

Semiconductor device

Overcurrent control circuit of power semiconductor device

Field effect semiconductor device and its production method

Power semiconductor device with temperature detector

Semiconductor device and method of manufacturing the same

Semiconductor device and fabrication method thereof

Semiconductor device for preventing destruction during a turn-off s...

Field effect type semiconductor device and manufacturing method the...

Insulated gate semiconductor device with improved short-circuit tol...

Method of fabricating an insulated gate semiconductor device

Semiconductor device having stable breakdown voltage in wiring area

Insulated gate semiconductor device and method of fabricating same

Patents Applicationslast 30 patents

SCHOTTKY BARRIER DIODE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Insulated gate semiconductor device having a clamping element to cl...

Insulated gate semiconductor device

IGBT module

Semiconductor device and method of manufacturing thereof

Semiconductor device

Manufacturing process of pn junction diode device and pn junction d...

Insulated gate semiconductor device and method of manufacturing the...

Insulated gate bipolar transistor, semiconductor device, method of...

Semiconductor device including insulating substrate formed of singl...

Power semiconductor device with temperature detector

Field effect semiconductor device and its production method

Field-effect semiconductor device