Yoshihiko Nagayasu

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Kawasaki, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a semiconductor device having trenches def...
- Patent number 7,510,975
- Issue date Mar 31, 2009
- Fuji Electric Holdings Co., Ltd.
- Daisuke Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 6,087,688
- Issue date Jul 11, 2000
- Fuji Electric Co., Ltd.
- Taku Furuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having low contact res...
- Patent number 5,972,768
- Issue date Oct 26, 1999
- Fuji Electric Co. Ltd.
- Yoshihiko Nagayasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus manufacturing method employing gate side wa...
- Patent number 5,591,657
- Issue date Jan 7, 1997
- Fuji Electric Co., Ltd.
- Naoto Fujishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing self-aligned LDD CMOS, DMOS with deeper source...
- Patent number 5,340,756
- Issue date Aug 23, 1994
- Fuji Electric Co., Ltd.
- Yoshihiko Nagayasu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for manufacturing semiconductor device with trenches in subs...
- Publication number 20060154438
- Publication date Jul 13, 2006
- Daisuke Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS