Yoshihiro Irokawa

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Ibaraki, JP

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Patents Grantslast 30 patents

Information Patent Grant
AlN single crystal Schottky barrier diode and method of producing t...
- Patent number 9,190,483
- Issue date Nov 17, 2015
- National Institute for Materials Science
- Yoshihiro Irokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlN single crystal Schottky barrier diode and method of producing t...
- Patent number 9,159,800
- Issue date Oct 13, 2015
- National Institute for Materials Science
- Yoshihiro Irokawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
AlN SINGLE CRYSTAL SCHOTTKY BARRIER DIODE AND METHOD OF PRODUCING T...
- Publication number 20150034961
- Publication date Feb 5, 2015
- National Institue for Materials Science
- Yoshihiro Irokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY-BARRIER JUNCTION ELEMENT, AND PHOTOELECTRIC CONVERSION ELE...
- Publication number 20120067410
- Publication date Mar 22, 2012
- National Institute for Materials Science
- Nobuyuki Matsuki
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...