Yoshihiro Miyazawa

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of processing surface of workpiece and method of forming sem...
- Patent number 6,440,855
- Issue date Aug 27, 2002
- Sony Corporation
- Yoshihiro Miyazawa
- B24 - GRINDING POLISHING
Information Patent Grant
Wafer bonding device
- Patent number 6,032,715
- Issue date Mar 7, 2000
- Sony Corporation
- Yasunori Ohkubo
- B25 - HAND TOOLS PORTABLE POWER-DRIVEN TOOLS MANIPULATORS
Information Patent Grant
Method and apparatus for wafer bonding
- Patent number 5,769,991
- Issue date Jun 23, 1998
- Sony Corporation
- Yoshihiro Miyazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI type MOS transistor device
- Patent number 5,395,772
- Issue date Mar 7, 1995
- Sony Corporation
- Yoshihiro Miyazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Full CMOS type SRAM and method of manufacturing same
- Patent number 5,363,324
- Issue date Nov 8, 1994
- Sony Corporation
- Makoto Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing full CMOS type SRAM
- Patent number 5,332,688
- Issue date Jul 26, 1994
- Sony Corporation
- Makoto Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI type vertical channel field effect transistor and process of ma...
- Patent number 5,312,782
- Issue date May 17, 1994
- Sony Corporation
- Yoshihiro Miyazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS semiconductor device formed by utilizing SOI substrate having a...
- Patent number 5,243,213
- Issue date Sep 7, 1993
- Sony Corporation
- Yoshihiro Miyazawa
- H01 - BASIC ELECTRIC ELEMENTS

Yoshihiro Miyazawa

Person

Patents Grantslast 30 patents

Method of processing surface of workpiece and method of forming sem...

Wafer bonding device

Method and apparatus for wafer bonding

SOI type MOS transistor device

Full CMOS type SRAM and method of manufacturing same

Method of manufacturing full CMOS type SRAM

SOI type vertical channel field effect transistor and process of ma...

MIS semiconductor device formed by utilizing SOI substrate having a...