Yoshihisa Mizutani

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Reflective liquid crystal display device
- Patent number 6,094,244
- Issue date Jul 25, 2000
- Kabushiki Kaisha Toshiba
- Yasushi Kawata
- G02 - OPTICS
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 5,172,196
- Issue date Dec 15, 1992
- Kabushiki Kaisha Toshiba
- Naohiro Matsukawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with composite electrode
- Patent number 4,954,871
- Issue date Sep 4, 1990
- Yoshihisa Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semi-conductor memory device with double gate structure
- Patent number 4,882,707
- Issue date Nov 21, 1989
- Kabushiki Kaisha Toshiba
- Yoshihisa Mizutani
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 4,878,199
- Issue date Oct 31, 1989
- Kabushiki Kaisha Toshiba
- Yoshihisa Mizutani
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM with sidewall control gate
- Patent number 4,754,320
- Issue date Jun 28, 1988
- Kabushiki Kaisha Toshiba
- Yoshihisa Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,745,453
- Issue date May 17, 1988
- Kabushiki Kaisha Toshiba
- Yoshihisa Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked complementary metal oxide semiconductor inverter
- Patent number 4,698,659
- Issue date Oct 6, 1987
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yoshihisa Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 4,665,418
- Issue date May 12, 1987
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yoshihisa Mizutani
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically erasable and programmable read only memory
- Patent number 4,661,833
- Issue date Apr 28, 1987
- Kabushiki Kaisha Toshiba
- Yoshihisa Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a recessed semiconductor device
- Patent number 4,642,880
- Issue date Feb 17, 1987
- Kabushiki Kaisha Toshiba
- Yoshihisa Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor device
- Patent number 4,637,128
- Issue date Jan 20, 1987
- Kabushiki Kaisha Toshiba
- Yoshihisa Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor device with bilayered source and drain
- Patent number 4,506,279
- Issue date Mar 19, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yoshihisa Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating three-dimensional semiconductor devices utili...
- Patent number 4,479,297
- Issue date Oct 30, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yoshihisa Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming SOS devices by selective laser treatment and reac...
- Patent number 4,437,225
- Issue date Mar 20, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yoshihisa Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact MOSFET device with reduced plurality of wire contacts
- Patent number 4,396,930
- Issue date Aug 2, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yoshihisa Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 4,383,883
- Issue date May 17, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yoshihisa Mizutani
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 4,106,049
- Issue date Aug 8, 1978
- Tokyo Shibaura Electric Co., Ltd.
- Satoshi Shinozaki
- H01 - BASIC ELECTRIC ELEMENTS

Yoshihisa Mizutani

Person

Patents Grantslast 30 patents

Reflective liquid crystal display device

Nonvolatile semiconductor memory device

Semiconductor device with composite electrode

Non-volatile semi-conductor memory device with double gate structure

Semiconductor memory device

EEPROM with sidewall control gate

Semiconductor device

Stacked complementary metal oxide semiconductor inverter

Semiconductor memory device

Electrically erasable and programmable read only memory

Method for manufacturing a recessed semiconductor device

Method of producing semiconductor device

Metal-oxide-semiconductor device with bilayered source and drain

Method of fabricating three-dimensional semiconductor devices utili...

Method of forming SOS devices by selective laser treatment and reac...

Compact MOSFET device with reduced plurality of wire contacts

Method for fabricating semiconductor device

Semiconductor device