Yoshikazu Ooshika

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
III nitride semiconductor epitaxial substrate and III nitride semic...
- Patent number 9,543,469
- Issue date Jan 10, 2017
- Dowa Electronics Materials Co., Ltd.
- Masatoshi Iwata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a p-AlGaN layer
- Patent number 8,765,222
- Issue date Jul 1, 2014
- Dowa Electronics Materials Co., Ltd.
- Yoshikazu Ooshika
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
III nitride epitaxial substrate and deep ultraviolet light emitting...
- Patent number 8,742,396
- Issue date Jun 3, 2014
- Dowa Electronics Materials Co., Ltd.
- Yoshikazu Ooshika
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of producing the same
- Patent number 8,735,938
- Issue date May 27, 2014
- Dowa Electronics Materials Co., Ltd.
- Yoshikazu Ooshika
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method of producing the same
- Patent number 8,680,509
- Issue date Mar 25, 2014
- Dowa Electronics Materials Co., Ltd.
- Yoshikazu Ooshika
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting element and method of manufact...
- Patent number 8,330,168
- Issue date Dec 11, 2012
- Dowa Electronics Materials Co., Ltd.
- Yutaka Ohta
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND III NITRIDE SEMIC...
- Publication number 20160172534
- Publication date Jun 16, 2016
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Masatoshi IWATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-AlGAN LAYER AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DE...
- Publication number 20140166943
- Publication date Jun 19, 2014
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Yoshikazu Ooshika
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
- Publication number 20130292641
- Publication date Nov 7, 2013
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Yoshikazu Ooshika
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III NITRIDE EPITAXIAL SUBSTRATE AND DEEP ULTRAVIOLET LIGHT EMITTING...
- Publication number 20130181188
- Publication date Jul 18, 2013
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Yoshikazu OOSHIKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
- Publication number 20120326209
- Publication date Dec 27, 2012
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Yoshikazu Ooshika
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-ALGAN LAYER, METHOD OF MANUFACTURING THE SAME, AND GROUP III NITR...
- Publication number 20120248387
- Publication date Oct 4, 2012
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Yoshikazu Ooshika
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
- Publication number 20120175589
- Publication date Jul 12, 2012
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Yoshikazu Ooshika
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACT...
- Publication number 20110266553
- Publication date Nov 3, 2011
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Yutaka Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING SEMICONDUCTOR
- Publication number 20090250684
- Publication date Oct 8, 2009
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Yutaka Ohta
- H01 - BASIC ELECTRIC ELEMENTS

Yoshikazu Ooshika

Person

Patents Grantslast 30 patents

III nitride semiconductor epitaxial substrate and III nitride semic...

Method of manufacturing a p-AlGaN layer

III nitride epitaxial substrate and deep ultraviolet light emitting...

Semiconductor device and method of producing the same

Nitride semiconductor device and method of producing the same

Nitride semiconductor light-emitting element and method of manufact...

Patents Applicationslast 30 patents

III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND III NITRIDE SEMIC...

P-AlGAN LAYER AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DE...

SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME

III NITRIDE EPITAXIAL SUBSTRATE AND DEEP ULTRAVIOLET LIGHT EMITTING...

SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME

P-ALGAN LAYER, METHOD OF MANUFACTURING THE SAME, AND GROUP III NITR...

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME

NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACT...

LIGHT EMITTING SEMICONDUCTOR