YOSHIKAZU TSUNEMINE

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HYOGO, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 6,853,026
- Issue date Feb 8, 2005
- Renesas Technology Corp.
- Yoshikazu Tsunemine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor manufacturing method having dielectric formed before elec...
- Patent number 6,746,876
- Issue date Jun 8, 2004
- Renesas Technology Corp.
- Hiromi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Providing a conductive material in an opening
- Patent number 6,670,232
- Issue date Dec 30, 2003
- Renesas Technology Corp.
- Yoshikazu Tsunemine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with capacitor using high dielectric constant...
- Patent number 6,501,113
- Issue date Dec 31, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yoshikazu Tsunemine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor and method of manufacturing same
- Patent number 6,384,443
- Issue date May 7, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yoshikazu Tsunemine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive layer connecting structure and method of manufacturing t...
- Patent number 6,278,150
- Issue date Aug 21, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Tomonori Okudaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a capacitor with a high dielectric cons...
- Patent number 6,144,053
- Issue date Nov 7, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Yoshikazu Tsunemine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a capacitor
- Patent number 6,078,072
- Issue date Jun 20, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Tomonori Okudaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor capacitor
- Patent number 6,049,103
- Issue date Apr 11, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Tsuyoshi Horikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor memory device with a high d...
- Patent number 5,981,331
- Issue date Nov 9, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Yoshikazu Tsunemine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with x-ray absorption layer
- Patent number 5,939,744
- Issue date Aug 17, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Tsuyoshi Horikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and manufacturing method thereof
- Patent number 5,699,291
- Issue date Dec 16, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Yoshikazu Tsunemine
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD HAVE A PILLAR-LIKE LOWER CAPACITOR ELECTRODE
- Publication number 20030228733
- Publication date Dec 11, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Hiromi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20030218201
- Publication date Nov 27, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Yoshikazu Tsunemine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device
- Publication number 20030139008
- Publication date Jul 24, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Yoshikazu Tsunemine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing same
- Publication number 20020125524
- Publication date Sep 12, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Tomonori Okudaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20020074661
- Publication date Jun 20, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yoshikazu Tsunemine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20010045591
- Publication date Nov 29, 2001
- YOSHIKAZU TSUNEMINE
- H01 - BASIC ELECTRIC ELEMENTS

YOSHIKAZU TSUNEMINE

Person

Patents Grantslast 30 patents

Semiconductor device

Capacitor manufacturing method having dielectric formed before elec...

Providing a conductive material in an opening

Semiconductor device with capacitor using high dielectric constant...

Stacked capacitor and method of manufacturing same

Conductive layer connecting structure and method of manufacturing t...

Semiconductor device having a capacitor with a high dielectric cons...

Semiconductor device having a capacitor

Semiconductor capacitor

Method of manufacturing a semiconductor memory device with a high d...

Semiconductor device with x-ray absorption layer

Semiconductor memory device and manufacturing method thereof

Patents Applicationslast 30 patents

MANUFACTURING METHOD HAVE A PILLAR-LIKE LOWER CAPACITOR ELECTRODE

Semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor device

Semiconductor device and method of manufacturing same

Semiconductor device and method of manufacturing the same

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME