Yoshiki Miura

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing GaN substrate, method of manufacturing epit...
- Patent number 8,471,264
- Issue date Jun 25, 2013
- Sumitomo Electric Industries, Ltd.
- Fumitake Nakanishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate having thin film of GaN joined thereon and method of fabr...
- Patent number 8,143,140
- Issue date Mar 27, 2012
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing GaN substrate, method of manufacturing epit...
- Patent number 7,932,114
- Issue date Apr 26, 2011
- Sumitomo Electric Industries, Ltd.
- Fumitake Nakanishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate and gallium nitride layer formation method
- Patent number 7,915,149
- Issue date Mar 29, 2011
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light-emitting element and substrate used in formatio...
- Patent number 7,915,635
- Issue date Mar 29, 2011
- Sumitomo Electric Industries, Ltd.
- Katsushi Akita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride baseplate and epitaxial substrate
- Patent number 7,843,040
- Issue date Nov 30, 2010
- Sumitomo Electric Industries, Ltd.
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN substrate, substrate with epitaxial layer, semiconductor device...
- Patent number 7,816,238
- Issue date Oct 19, 2010
- Sumitomo Electric Industries, Ltd.
- Hideki Osada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate having thin film of GaN joined thereon and method of fabr...
- Patent number 7,728,348
- Issue date Jun 1, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride baseplate, epitaxial substrate, and method of formi...
- Patent number 7,518,216
- Issue date Apr 14, 2009
- Sumitomo Electric Industries, Ltd.
- Akinori Koukitu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making group III-V compound semiconductor wafer
- Patent number 6,294,019
- Issue date Sep 25, 2001
- Sumitomo Electric Industries, Ltd.
- Yoshiki Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and method of preparing the same
- Patent number 6,031,252
- Issue date Feb 29, 2000
- Sumitomo Electric Industries, Ltd.
- Yoshiki Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for vapor phase epitaxy of compound semiconductor
- Patent number 5,970,314
- Issue date Oct 19, 1999
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting device, wafer for light emitting device, and method...
- Patent number 5,962,875
- Issue date Oct 5, 1999
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and compound semiconductor light emitting device, a...
- Patent number 5,864,573
- Issue date Jan 26, 1999
- Sumitomo Electric Industries, Ltd.
- Yoshiki Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and method of preparing the same
- Patent number 5,843,590
- Issue date Dec 1, 1998
- Sumitomo Electric Industries, Ltd.
- Yoshiki Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device, wafer for light emitting device, and method...
- Patent number 5,834,325
- Issue date Nov 10, 1998
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor light emitting device and method of preparin...
- Patent number 5,756,374
- Issue date May 26, 1998
- Sumitomo Electric Industries, Ltd.
- Yoshiki Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor light emitting device and method of preparin...
- Patent number 5,665,986
- Issue date Sep 9, 1997
- Sumitomo Electric Industries, Ltd.
- Yoshiki Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor wafer with defects propagating prevention means
- Patent number 5,212,394
- Issue date May 18, 1993
- Sumitomo Electric Industries, Ltd.
- Takashi Iwasaki
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPIT...
- Publication number 20110163325
- Publication date Jul 7, 2011
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Fumitake NAKANISHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABR...
- Publication number 20100210089
- Publication date Aug 19, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPIT...
- Publication number 20090093077
- Publication date Apr 9, 2009
- Sumitomo Electric Industries, Ltd.
- Fumitake NAKANISHI
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Baseplate and Epitaxial Substrate
- Publication number 20090079036
- Publication date Mar 26, 2009
- Sumitomo Electric Industries, Ltd.
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE...
- Publication number 20080308906
- Publication date Dec 18, 2008
- Sumitomo Electric Industries, Ltd.
- Hideki OSADA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE AND GALLIUM NITRIDE LAYER FORMATION METHOD
- Publication number 20080308814
- Publication date Dec 18, 2008
- Sumitomo Electric Industries, Ltd.
- Seiji NAKAHATA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Dev...
- Publication number 20080308815
- Publication date Dec 18, 2008
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SUBSTRATE USED IN FORMATIO...
- Publication number 20080296610
- Publication date Dec 4, 2008
- Sumitomo Electric Industries, Ltd.
- Katsushi AKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
- Publication number 20080299694
- Publication date Dec 4, 2008
- Sumitomo Electric Industries, Ltd.
- Katsushi AKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate having thin film of GaN joined thereon and method of fabr...
- Publication number 20080169483
- Publication date Jul 17, 2008
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Hitoshi Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Baseplate, Epitaxial Substrate, and Method of Formi...
- Publication number 20070215982
- Publication date Sep 20, 2007
- Sumitomo Electric Industries, Ltd.
- Akinori Koukitu
- C30 - CRYSTAL GROWTH

Yoshiki Miura

Person

Patents Grantslast 30 patents

Method of manufacturing GaN substrate, method of manufacturing epit...

Substrate having thin film of GaN joined thereon and method of fabr...

Method of manufacturing GaN substrate, method of manufacturing epit...

Gallium nitride substrate and gallium nitride layer formation method

Semiconductor light-emitting element and substrate used in formatio...

Gallium nitride baseplate and epitaxial substrate

GaN substrate, substrate with epitaxial layer, semiconductor device...

Substrate having thin film of GaN joined thereon and method of fabr...

Gallium nitride baseplate, epitaxial substrate, and method of formi...

Method of making group III-V compound semiconductor wafer

Epitaxial wafer and method of preparing the same

Process for vapor phase epitaxy of compound semiconductor

Light emitting device, wafer for light emitting device, and method...

Epitaxial wafer and compound semiconductor light emitting device, a...

Epitaxial wafer and method of preparing the same

Light emitting device, wafer for light emitting device, and method...

Compound semiconductor light emitting device and method of preparin...

Compound semiconductor light emitting device and method of preparin...

Compound semiconductor wafer with defects propagating prevention means

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPIT...

SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABR...

METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPIT...

Gallium Nitride Baseplate and Epitaxial Substrate

GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE...

GALLIUM NITRIDE SUBSTRATE AND GALLIUM NITRIDE LAYER FORMATION METHOD

GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Dev...

SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SUBSTRATE USED IN FORMATIO...

METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT

Substrate having thin film of GaN joined thereon and method of fabr...

Gallium Nitride Baseplate, Epitaxial Substrate, and Method of Formi...