Yoshiki Naoi

Person

Tokushima-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Light emitting diode and method of fabricating the same
- Patent number 8,039,280
- Issue date Oct 18, 2011
- Seoul Opto Device Co., Ltd.
- Shiro Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride semiconductor thin film, method for fabricating t...
- Patent number 7,955,957
- Issue date Jun 7, 2011
- Samsung LED Co., Ltd.
- Rak Jun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride semiconductor thin film, method for fabricating t...
- Patent number 7,687,814
- Issue date Mar 30, 2010
- Samsung Electro-Mechanics Co., Ltd.
- Rak Jun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing non-polar a-plane gallium nitride
- Patent number 7,348,200
- Issue date Mar 25, 2008
- Samsung Electro-Mechanics Co. Ltd.
- Soo Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride-based compound semiconductor device
- Patent number 7,005,685
- Issue date Feb 28, 2006
- Nitride Semiconductors Co., Ltd.
- Shiro Sakai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
- Publication number 20100171136
- Publication date Jul 8, 2010
- SEOUL OPTO DEVICE CO., LTD.
- Shiro Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE SEMICONDUCTOR THIN FILM, METHOD FOR FABRICATING T...
- Publication number 20100055883
- Publication date Mar 4, 2010
- Samsung Electro-Mechanics Co., Ltd.
- Rak Jun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR THIN FILM AND GROUP III SEMICONDUCT...
- Publication number 20090224270
- Publication date Sep 10, 2009
- SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Rak Jun CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride semiconductor thin film and group III semiconduct...
- Publication number 20070221948
- Publication date Sep 27, 2007
- Rak Jun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-nitride semiconductor thin film, method for fabricating t...
- Publication number 20070045654
- Publication date Mar 1, 2007
- Samsung Electro-Mechanics CO., LTD.
- Rak Jun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of growing non-polar a-plane gallium nitride
- Publication number 20060216914
- Publication date Sep 28, 2006
- Samsung Electro-Mechanics Co., Ltd.
- Soo Min Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium-nitride-based compound semiconductor device
- Publication number 20030222266
- Publication date Dec 4, 2003
- Shiro Sakai
- H01 - BASIC ELECTRIC ELEMENTS

Yoshiki Naoi

Person

Patents Grantslast 30 patents

Light emitting diode and method of fabricating the same

Group III-nitride semiconductor thin film, method for fabricating t...

Group III-nitride semiconductor thin film, method for fabricating t...

Method of growing non-polar a-plane gallium nitride

Gallium-nitride-based compound semiconductor device

Patents Applicationslast 30 patents

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

GROUP III-NITRIDE SEMICONDUCTOR THIN FILM, METHOD FOR FABRICATING T...

GROUP III NITRIDE SEMICONDUCTOR THIN FILM AND GROUP III SEMICONDUCT...

Group III nitride semiconductor thin film and group III semiconduct...

Group III-nitride semiconductor thin film, method for fabricating t...

Method of growing non-polar a-plane gallium nitride

Gallium-nitride-based compound semiconductor device