Yoshimi Shioya

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of producing a contact plug
- Patent number 4,906,593
- Issue date Mar 6, 1990
- Fujitsu Limited
- Yoshimi Shioya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selectively depositing tungsten upon a semiconductor subs...
- Patent number 4,804,560
- Issue date Feb 14, 1989
- Fujitsu Limited
- Yoshimi Shioya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for plasma chemical vapor deposition
- Patent number 4,625,678
- Issue date Dec 2, 1986
- Fujitsu Limited
- Yoshimi Shioya
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for coating a semiconductor device with a phosphosilicate glass
- Patent number 4,513,026
- Issue date Apr 23, 1985
- Fujitsu Limited
- Hidekazu Miyamoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of growing silicate glass layers employing chemical vapor de...
- Patent number 4,487,787
- Issue date Dec 11, 1984
- Fujitsu Limited
- Yoshimi Shioya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for manufacturing a semiconductor device having a non-porou...
- Patent number 4,406,053
- Issue date Sep 27, 1983
- Fujitsu Limited
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of plasma enhanced chemical vapor deposition of phosphosilic...
- Patent number 4,394,401
- Issue date Jul 19, 1983
- Fujitsu Limited
- Yoshimi Shioya
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Yoshimi Shioya

Person

Patents Grantslast 30 patents

Method of producing a contact plug

Method of selectively depositing tungsten upon a semiconductor subs...

Apparatus for plasma chemical vapor deposition

Method for coating a semiconductor device with a phosphosilicate glass

Method of growing silicate glass layers employing chemical vapor de...

Process for manufacturing a semiconductor device having a non-porou...

Method of plasma enhanced chemical vapor deposition of phosphosilic...