Yoshio Ishikawa

Person

Narita, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Seasoning method and etching method
- Patent number 10,950,452
- Issue date Mar 16, 2021
- Tokyo Electron Limited
- Yoshio Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method of plasma discharge ignition to reduce surface pa...
- Patent number 10,818,502
- Issue date Oct 27, 2020
- Tokyo Electron Limited
- Sergey Voronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for ESC charge control for wafer clamping
- Patent number 9,530,626
- Issue date Dec 27, 2016
- Tokyo Electron Limited
- Jason Marion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene etch processes
- Patent number 7,253,115
- Issue date Aug 7, 2007
- Applied Materials, Inc.
- Hiroya Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precision dielectric etch using hexafluorobutadiene
- Patent number 6,800,213
- Issue date Oct 5, 2004
- Ji Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etchant for silicon oxide and method
- Patent number 6,461,533
- Issue date Oct 8, 2002
- Applied Materials Inc.
- Yasuhiro Horiike
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Dielectric etch process reducing striations and maintaining critica...
- Patent number 6,432,318
- Issue date Aug 13, 2002
- Applied Materials, Inc.
- Ji Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching apparatus
- Patent number 5,772,833
- Issue date Jun 30, 1998
- Tokyo Electron Limited
- Koichiro Inazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma process apparatus
- Patent number 5,717,294
- Issue date Feb 10, 1998
- Kabushiki Kaisha Toshiba
- Itsuko Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching apparatus
- Patent number 5,556,500
- Issue date Sep 17, 1996
- Tokyo Electron Limited
- Makoto Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching method for a silicon-containing layer using hydrogen bromide
- Patent number 5,368,684
- Issue date Nov 29, 1994
- Tokyo Electron Limited
- Yoshio Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma processing apparatus
- Patent number 5,271,788
- Issue date Dec 21, 1993
- Tokyo Electron Limited
- Makoto Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etching method
- Patent number 5,259,923
- Issue date Nov 9, 1993
- Tokyo Electron Limited
- Masaru Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface-heating apparatus and surface-treating method
- Patent number 5,240,556
- Issue date Aug 31, 1993
- Tokyo Electron Limited
- Yoshio Ishikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for processing substrate
- Patent number 5,164,034
- Issue date Nov 17, 1992
- Tokyo Electron Limited
- Izumi Arai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PLASMA DISCHARGE IGNITION TO REDUCE SURFACE PARTICLES
- Publication number 20180144946
- Publication date May 24, 2018
- TOKYO ELECTRON LIMITED
- Sergey Voronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEASONING METHOD AND ETCHING METHOD
- Publication number 20170062227
- Publication date Mar 2, 2017
- TOKYO ELECTRON LIMITED
- Yoshio Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR ESC CHARGE CONTROL FOR WAFER CLAMPING
- Publication number 20160027620
- Publication date Jan 28, 2016
- TOKYO ELECTRON LIMITED
- Jason MARION
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRY CLEANING METHOD AND PLASMA PROCESSING APPARATUS
- Publication number 20150311045
- Publication date Oct 29, 2015
- TOKYO ELECTRON LIMITED
- Yoshio ISHIKAWA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming a damascene structure
- Publication number 20040192051
- Publication date Sep 30, 2004
- APPLIED MATERIALS, INC.
- Hiroya Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual damascene etch processes
- Publication number 20040157460
- Publication date Aug 12, 2004
- APPLIED MATERIALS, INC.
- Hiroya Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Precision dielectric etch using hexafluorobutadiene
- Publication number 20030036287
- Publication date Feb 20, 2003
- Ji Ding
- H01 - BASIC ELECTRIC ELEMENTS

Yoshio Ishikawa

Person

Patents Grantslast 30 patents

Seasoning method and etching method

System and method of plasma discharge ignition to reduce surface pa...

Method and apparatus for ESC charge control for wafer clamping

Dual damascene etch processes

Precision dielectric etch using hexafluorobutadiene

Etchant for silicon oxide and method

Dielectric etch process reducing striations and maintaining critica...

Plasma etching apparatus

Plasma process apparatus

Plasma etching apparatus

Etching method for a silicon-containing layer using hydrogen bromide

Plasma processing apparatus

Dry etching method

Surface-heating apparatus and surface-treating method

Apparatus and method for processing substrate

Patents Applicationslast 30 patents

METHOD OF PLASMA DISCHARGE IGNITION TO REDUCE SURFACE PARTICLES

SEASONING METHOD AND ETCHING METHOD

METHOD AND APPARATUS FOR ESC CHARGE CONTROL FOR WAFER CLAMPING

DRY CLEANING METHOD AND PLASMA PROCESSING APPARATUS

Method of forming a damascene structure

Dual damascene etch processes

Precision dielectric etch using hexafluorobutadiene