Yoshio Terasawa

Person

Ibaraki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a static induction in a recessed portion
- Patent number 6,180,965
- Issue date Jan 30, 2001
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 6,159,776
- Issue date Dec 12, 2000
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process for manufacturing the same
- Patent number 6,075,269
- Issue date Jun 13, 2000
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 6,025,233
- Issue date Feb 15, 2000
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid vertical type power semiconductor device
- Patent number 6,002,143
- Issue date Dec 14, 1999
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing serrated gate-type or joined structure
- Patent number 5,956,577
- Issue date Sep 21, 1999
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having recessed gate regions and method of man...
- Patent number 5,950,075
- Issue date Sep 7, 1999
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having recessed gate...
- Patent number 5,946,572
- Issue date Aug 31, 1999
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device having a plurality of cavi...
- Patent number 5,930,651
- Issue date Jul 27, 1999
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having recessed gate structures and method of...
- Patent number 5,894,140
- Issue date Apr 13, 1999
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 5,847,417
- Issue date Dec 8, 1998
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device containing two joined substrates
- Patent number 5,841,155
- Issue date Nov 24, 1998
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,757,035
- Issue date May 26, 1998
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,739,044
- Issue date Apr 14, 1998
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of cavity defined gating re...
- Patent number 5,648,665
- Issue date Jul 15, 1997
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with base formed by the junction of two semico...
- Patent number 5,602,405
- Issue date Feb 11, 1997
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,591,991
- Issue date Jan 7, 1997
- NGK Insulators, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse blocking type semiconductor device
- Patent number 4,713,679
- Issue date Dec 15, 1987
- Hitachi, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field controlled thyristor with double-diffused source region
- Patent number 4,514,747
- Issue date Apr 30, 1985
- Hitachi, Ltd.
- Kenji Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light activated semiconductor device
- Patent number 4,404,580
- Issue date Sep 13, 1983
- Hitachi, Ltd.
- Nobutake Konishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field controlled thyristor control circuit with additional FCT in r...
- Patent number 4,354,121
- Issue date Oct 12, 1982
- Hitachi, Ltd.
- Yoshio Terasawa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Method for manufacturing a semiconductor device utilizing selective...
- Patent number 4,329,772
- Issue date May 18, 1982
- Hitachi, Ltd.
- Saburo Oikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field controlled thyristor with dual resistivity field layer
- Patent number 4,223,328
- Issue date Sep 16, 1980
- Hitachi, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amplified gate semiconductor controlled rectifier with reduced life...
- Patent number 4,214,254
- Issue date Jul 22, 1980
- Hitachi, Ltd.
- Shin Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor controlled rectifier with configured cathode to elimi...
- Patent number 4,210,924
- Issue date Jul 1, 1980
- Hitachi, Ltd.
- Katsumi Akabane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor controlled rectifier having an auxiliary region with...
- Patent number 4,114,178
- Issue date Sep 12, 1978
- Hitachi, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS

Yoshio Terasawa

Person

Patents Grantslast 30 patents

Semiconductor device having a static induction in a recessed portion

Method for manufacturing semiconductor device

Semiconductor device and process for manufacturing the same

Method of manufacturing a semiconductor device

Hybrid vertical type power semiconductor device

Method of manufacturing serrated gate-type or joined structure

Semiconductor device having recessed gate regions and method of man...

Method of manufacturing a semiconductor device having recessed gate...

Method of forming a semiconductor device having a plurality of cavi...

Semiconductor device having recessed gate structures and method of...

Semiconductor device and method of manufacturing same

Semiconductor device containing two joined substrates

Semiconductor device

Method of manufacturing semiconductor device

Semiconductor device having a plurality of cavity defined gating re...

Semiconductor device with base formed by the junction of two semico...

Semiconductor device and method of manufacturing the same

Reverse blocking type semiconductor device

Field controlled thyristor with double-diffused source region

Light activated semiconductor device

Field controlled thyristor control circuit with additional FCT in r...

Method for manufacturing a semiconductor device utilizing selective...

Field controlled thyristor with dual resistivity field layer

Amplified gate semiconductor controlled rectifier with reduced life...

Semiconductor controlled rectifier with configured cathode to elimi...

Semiconductor controlled rectifier having an auxiliary region with...