Yoshiro Goto

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit device with switching between active mode and st...
- Patent number 6,664,148
- Issue date Dec 16, 2003
- NEC Corporation
- Yoshiro Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,521,500
- Issue date Feb 18, 2003
- NEC Corporation
- Yoshiro Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device having different gate...
- Patent number 6,503,800
- Issue date Jan 7, 2003
- NEC Corporation
- Takeshi Toda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with switching between active mode and st...
- Patent number 6,388,504
- Issue date May 14, 2002
- NEC Corporation
- Yoshiro Goto
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for producing semiconductor device
- Patent number 6,184,094
- Issue date Feb 6, 2001
- NEC Corporation
- Yoshiro Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried-channel MOS transistor and process of producing same
- Patent number 5,933,737
- Issue date Aug 3, 1999
- NEC Corporation
- Yoshiro Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device with planarization step...
- Patent number 5,733,818
- Issue date Mar 31, 1998
- NEC Corporation
- Yoshiro Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried-channel MOS transistor and process of producing same
- Patent number 5,719,430
- Issue date Feb 17, 1998
- NEC Corporation
- Yoshiro Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing LDD type MIS device
- Patent number 5,614,432
- Issue date Mar 25, 1997
- NEC Corporation
- Yoshiro Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory device having oxynitride film for...
- Patent number 5,306,936
- Issue date Apr 26, 1994
- NEC Corporation
- Yoshiro Goto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device covering transistor and resistance with capaci...
- Publication number 20030183880
- Publication date Oct 2, 2003
- Yoshiro Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit device with switching between active mode and st...
- Publication number 20020105041
- Publication date Aug 8, 2002
- NEC Corporation
- Yoshiro Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of semiconductor device
- Publication number 20010053579
- Publication date Dec 20, 2001
- Takeshi Toda
- H01 - BASIC ELECTRIC ELEMENTS

Yoshiro Goto

Person

Patents Grantslast 30 patents

Integrated circuit device with switching between active mode and st...

Semiconductor device and method of manufacturing the same

Manufacturing method of semiconductor device having different gate...

Integrated circuit device with switching between active mode and st...

Method for producing semiconductor device

Buried-channel MOS transistor and process of producing same

Method for fabricating semiconductor device with planarization step...

Buried-channel MOS transistor and process of producing same

Method for manufacturing LDD type MIS device

Non-volatile semiconductor memory device having oxynitride film for...

Patents Applicationslast 30 patents

Semiconductor device covering transistor and resistance with capaci...

Integrated circuit device with switching between active mode and st...

Manufacturing method of semiconductor device