Yoshisato Yokoyama

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Hsinchu, TW

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Patents Grantslast 30 patents

Information Patent Grant
Drive circuit with improved timing margin for memory device
- Patent number 12,340,838
- Issue date Jun 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Masaru Haraguchi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
LOW POWER INTERMEDIATE PRE-CHARGE OPERATIONS IN MEMORY
- Publication number 20250218481
- Publication date Jul 3, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Yorinobu Fujino
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM INTERNAL DFT CIRCUIT WITHOUT OUTPUT HOLD DEGRADATION
- Publication number 20240412794
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yoshisato Yokoyama
- G11 - INFORMATION STORAGE
Information Patent Application
DRIVE CIRCUIT WITH IMPROVED TIMING MARGIN FOR MEMORY DEVICE
- Publication number 20240021241
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Masaru Haraguchi
- G11 - INFORMATION STORAGE