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Yoshishige Matsumoto
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Tokyo, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Insulating film comprising amorphous carbon fluoride, a semiconduct...
Patent number
6,372,628
Issue date
Apr 16, 2002
NEC Corporation
Yoshihisa Matsubara
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
GaN crystal film, a group III element nitride semiconductor wafer a...
Patent number
6,252,261
Issue date
Jun 26, 2001
NEC Corporation
Akira Usui
B82 - NANO-TECHNOLOGY
Information
Patent Grant
Semiconductor manufacturing method
Patent number
6,180,531
Issue date
Jan 30, 2001
NEC Corporation
Yoshishige Matsumoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Insulating film comprising amorphous carbon fluoride, a semiconduct...
Patent number
6,091,081
Issue date
Jul 18, 2000
NEC Corporation
Yoshihisa Matsubara
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device and manufacturing method of the same
Patent number
5,866,920
Issue date
Feb 2, 1999
NEC Corporation
Yoshishige Matsumoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Depletion mode two-dimensional electron gas field effect transistor...
Patent number
4,689,646
Issue date
Aug 25, 1987
NEC Corporation
Yoshishige Matsumoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor laser
Patent number
4,434,491
Issue date
Feb 28, 1984
Nippon Electric Co., Ltd.
Isamu Sakuma
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
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Patent Application
Base substrate for crystal growth and manufacturing method of subst...
Publication number
20030207125
Publication date
Nov 6, 2003
NEC Corporation
Haruo Sunakawa
C30 - CRYSTAL GROWTH