Yoshishige Suzuki

Person

Ibaraki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Resistance change type memory including write control circuit to co...
- Patent number 10,431,303
- Issue date Oct 1, 2019
- National Institute of Advanced Industrial Science and Technology
- Takayuki Nozaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Electric field ferromagnetic resonance excitation method and magnet...
- Patent number 9,460,769
- Issue date Oct 4, 2016
- National Institute of Advanced Industrial Science and Technology
- Takayuki Nozaki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic field feedback based spintronic oscillator
- Patent number 9,088,243
- Issue date Jul 21, 2015
- Ashwin Tulapurkar
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Negative-resistance device with the use of magneto-resistive effect
- Patent number 8,013,408
- Issue date Sep 6, 2011
- Canon Anelva Corporation
- Hiroki Maehara
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Microwave transmission line integrated microwave generating element...
- Patent number 7,764,136
- Issue date Jul 27, 2010
- Japan Science and Technology Agency
- Yoshishige Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel magnetoresistance element having a double underlayer of amor...
- Patent number 7,514,160
- Issue date Apr 7, 2009
- National Institute of Advanced Industrial Science and Technology
- Taro Nagahama
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel magnetoresistance element
- Patent number 7,220,498
- Issue date May 22, 2007
- National Institute of Advanced Industrial Science and Technology
- Taro Nagahama
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
RESISTANCE CHANGE TYPE MEMORY
- Publication number 20180158525
- Publication date Jun 7, 2018
- National Institute of Advanced Science and Technology
- Takayuki Nozaki
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRIC FIELD FERROMAGNETIC RESONANCE EXCITATION METHOD AND MAGNET...
- Publication number 20150085569
- Publication date Mar 26, 2015
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Takayuki Nozaki
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC FIELD FEEDBACK BASED SPINTRONIC OSCILLATOR
- Publication number 20140070896
- Publication date Mar 13, 2014
- Indian Institute of Technology Bombay
- Ashwin Tulapurkar
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MAGNETIZATION CONTROL METHOD, INFORMATION STORAGE METHOD, INFORMATI...
- Publication number 20110049659
- Publication date Mar 3, 2011
- Yoshishige Suzuki
- G11 - INFORMATION STORAGE
Information Patent Application
AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE
- Publication number 20090322419
- Publication date Dec 31, 2009
- Canon ANELVA Corporation
- Hiroki Maehara
- G11 - INFORMATION STORAGE
Information Patent Application
NEGATIVE-RESISTANCE DEVICE WITH THE USE OF MAGNETO-RESISTIVE EFFECT
- Publication number 20090261436
- Publication date Oct 22, 2009
- Canon ANELVA Corporation
- Hiroki Maehara
- G11 - INFORMATION STORAGE
Information Patent Application
Microwave Transmission Line Integrated Microwave Generating Element...
- Publication number 20080150643
- Publication date Jun 26, 2008
- Yoshishige Suzuki
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
TUNNEL MAGNETORESISTANCE ELEMENT
- Publication number 20070128470
- Publication date Jun 7, 2007
- National Inst. of Advanced Ind. Science and Tech.
- Taro Nagahama
- G01 - MEASURING TESTING
Information Patent Application
Tunnel magnetoresistive element
- Publication number 20040144995
- Publication date Jul 29, 2004
- Taro Nagahama
- G01 - MEASURING TESTING

Yoshishige Suzuki

Person

Patents Grantslast 30 patents

Resistance change type memory including write control circuit to co...

Electric field ferromagnetic resonance excitation method and magnet...

Magnetic field feedback based spintronic oscillator

Negative-resistance device with the use of magneto-resistive effect

Microwave transmission line integrated microwave generating element...

Tunnel magnetoresistance element having a double underlayer of amor...

Tunnel magnetoresistance element

Patents Applicationslast 30 patents

RESISTANCE CHANGE TYPE MEMORY

ELECTRIC FIELD FERROMAGNETIC RESONANCE EXCITATION METHOD AND MAGNET...

MAGNETIC FIELD FEEDBACK BASED SPINTRONIC OSCILLATOR

MAGNETIZATION CONTROL METHOD, INFORMATION STORAGE METHOD, INFORMATI...

AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE

NEGATIVE-RESISTANCE DEVICE WITH THE USE OF MAGNETO-RESISTIVE EFFECT

Microwave Transmission Line Integrated Microwave Generating Element...

TUNNEL MAGNETORESISTANCE ELEMENT

Tunnel magnetoresistive element