Yoshitaka Tsunashima

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Poughkeepsie, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Deep trench filling method using silicon film deposition and silico...
- Patent number 5,888,876
- Issue date Mar 30, 1999
- Kabushiki Kaisha Toshiba
- Jun-ichi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for manufacturing a semiconductor device
- Patent number 5,766,785
- Issue date Jun 16, 1998
- Kabushiki Kaisha Toshiba
- Yuuichi Mikata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer support apparatus and method
- Patent number 5,605,574
- Issue date Feb 25, 1997
- Kabushiki Kaisha Toshiba
- Yoshitaka Tsunashima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Smooth surface doped silicon film formation
- Patent number 5,451,809
- Issue date Sep 19, 1995
- Kabushiki Kaisha Toshiba
- Jun-ichi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS