Yoshito Ikeda

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,847,319
- Issue date Dec 7, 2010
- Panasonic Corporation
- Yutaka Hirose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 7,585,706
- Issue date Sep 8, 2009
- Panasonic Corporation
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device for reducing a surfac...
- Patent number 7,449,399
- Issue date Nov 11, 2008
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a group III-V nitride semiconductor
- Patent number 7,339,207
- Issue date Mar 4, 2008
- Matsushita Electric Industrial Co., Ltd.
- Tomohiro Murata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Infrared sensor and infrared sensor array
- Patent number 7,332,717
- Issue date Feb 19, 2008
- Matsushita Electric Industrial Co., Ltd.
- Takahiko Murata
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method for fabricating a semiconductor device including a group III...
- Patent number 7,323,376
- Issue date Jan 29, 2008
- Matsushita Electric Industrial Co., Ltd.
- Yutaka Hirose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,307,292
- Issue date Dec 11, 2007
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an active region formed from group III...
- Patent number 7,285,806
- Issue date Oct 23, 2007
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device including exposing a...
- Patent number 7,122,451
- Issue date Oct 17, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride compound semiconductor device having schottky contact
- Patent number 7,105,907
- Issue date Sep 12, 2006
- Matsushita Electric Industrial Co., Ltd.
- Yoshito Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor semiconductor device
- Patent number 7,078,743
- Issue date Jul 18, 2006
- Matsushita Electric Industrial Co., Ltd.
- Tomohiro Murata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,037,817
- Issue date May 2, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 6,933,181
- Issue date Aug 23, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,852,612
- Issue date Feb 8, 2005
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Palladium silicide (PdSi) schottky electrode for gallium nitride se...
- Patent number 6,809,352
- Issue date Oct 26, 2004
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction field effect transistor having an InGaAIN cap film
- Patent number 6,787,820
- Issue date Sep 7, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,774,449
- Issue date Aug 10, 2004
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device composed of a group III-V nitride semiconductor
- Patent number 6,770,922
- Issue date Aug 3, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device composed of a group III-V nitride semiconductor
- Patent number 6,737,683
- Issue date May 18, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,593,193
- Issue date Jul 15, 2003
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF semiconductor device and a method for manufacturing the same
- Patent number 5,872,393
- Issue date Feb 16, 1999
- Matsushita Electric Industrial Co., Ltd.
- Hiroyuki Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for annealing compound semiconductor devices
- Patent number 5,162,242
- Issue date Nov 10, 1992
- Matsushita Electric Industrial Co., Ltd.
- Akiyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20080083933
- Publication date Apr 10, 2008
- Matsushita Electric Industrial Co., Ltd.
- Yutaka Hirose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20080038856
- Publication date Feb 14, 2008
- Matsushita Electronics Corporation
- Katsunori NISHII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device of Group III nitride semiconductor having oxid...
- Publication number 20070194295
- Publication date Aug 23, 2007
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Infrared sensor and infrared sensor array
- Publication number 20070125949
- Publication date Jun 7, 2007
- Takahiko Murata
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20070020896
- Publication date Jan 25, 2007
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060289894
- Publication date Dec 28, 2006
- Matsushita Electric Industrial Co., Ltd.
- Tomohiro Murata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact formation method and semiconductor device
- Publication number 20050189651
- Publication date Sep 1, 2005
- Matsushita Elec. Ind. Co. Ltd.
- Yutaka Hirose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semisonductor device
- Publication number 20050006664
- Publication date Jan 13, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050001235
- Publication date Jan 6, 2005
- Tomohiro Murata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20040238860
- Publication date Dec 2, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO.,LTD.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20040227153
- Publication date Nov 18, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Yutaka Hirose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20040175853
- Publication date Sep 9, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor device
- Publication number 20040137761
- Publication date Jul 15, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride compound semiconductor device having schottky contact
- Publication number 20040061194
- Publication date Apr 1, 2004
- Yoshito Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030222276
- Publication date Dec 4, 2003
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20030213975
- Publication date Nov 20, 2003
- Matsushita Electric Industrial Co, Ltd.
- Yutaka Hirose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030209762
- Publication date Nov 13, 2003
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having an active region formed from group III...
- Publication number 20030205721
- Publication date Nov 6, 2003
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030160265
- Publication date Aug 28, 2003
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030160269
- Publication date Aug 28, 2003
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030107101
- Publication date Jun 12, 2003
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030109088
- Publication date Jun 12, 2003
- Matsushita Electronics Corporation
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020139995
- Publication date Oct 3, 2002
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20020119610
- Publication date Aug 29, 2002
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS

Yoshito Ikeda

Person

Patents Grantslast 30 patents

Semiconductor device and method for fabricating the same

Method of fabricating a semiconductor device

Method for fabricating a semiconductor device for reducing a surfac...

Semiconductor device including a group III-V nitride semiconductor

Infrared sensor and infrared sensor array

Method for fabricating a semiconductor device including a group III...

Semiconductor device and method for fabricating the same

Semiconductor device having an active region formed from group III...

Method for fabricating a semiconductor device including exposing a...

Gallium nitride compound semiconductor device having schottky contact

Field effect transistor semiconductor device

Semiconductor device and method for fabricating the same

Method for fabricating semiconductor device

Semiconductor device and method for fabricating the same

Palladium silicide (PdSi) schottky electrode for gallium nitride se...

Hetero-junction field effect transistor having an InGaAIN cap film

Semiconductor device and method for fabricating the same

Semiconductor device composed of a group III-V nitride semiconductor

Semiconductor device composed of a group III-V nitride semiconductor

Semiconductor device and method for fabricating the same

RF semiconductor device and a method for manufacturing the same

Method for annealing compound semiconductor devices

Patents Applicationslast 30 patents

Semiconductor device and method for fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device of Group III nitride semiconductor having oxid...

Infrared sensor and infrared sensor array

Semiconductor device and method for fabricating the same

Semiconductor device

Contact formation method and semiconductor device

Semisonductor device

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Method for fabricating semiconductor device

Gallium nitride compound semiconductor device having schottky contact

Semiconductor device and method for fabricating the same

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device having an active region formed from group III...

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device

Semiconductor device and method for fabricating the same