YOSHITO NAKAZAWA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,876,127
- Issue date Jan 16, 2024
- Renesas Electronics Corporation
- Tomohiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,830,939
- Issue date Nov 28, 2023
- Renesas Electronics Corporation
- Tomohiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate semiconductor device with dummy gate electrode and manu...
- Patent number 11,107,912
- Issue date Aug 31, 2021
- Renesas Electronics Corporation
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,903,354
- Issue date Jan 26, 2021
- Renesas Electronics Corporation
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,475,882
- Issue date Nov 12, 2019
- Renesas Electronics Corporation
- Shigeaki Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 10,211,332
- Issue date Feb 19, 2019
- Renesas Electronics Corporation
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 9,837,528
- Issue date Dec 5, 2017
- Renesas Electronics Corporation
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a P-channel power MOSFET
- Patent number 9,825,167
- Issue date Nov 21, 2017
- Renesas Electronics Corporation
- Hitoshi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 9,786,736
- Issue date Oct 10, 2017
- Renesas Electronics Corporation
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power superjunction MOSFET device with resurf regions
- Patent number 9,660,070
- Issue date May 23, 2017
- Renesas Electronics Corporation
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,520,318
- Issue date Dec 13, 2016
- Renesas Electronics Corporation
- Satoshi Eguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 9,478,530
- Issue date Oct 25, 2016
- Renesas Electronics Corporation
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a MOSFET and having a super-junction...
- Patent number 9,379,235
- Issue date Jun 28, 2016
- Renesas Electronics Corporation
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT and diode
- Patent number 9,349,827
- Issue date May 24, 2016
- Renesas Electronics Corporation
- Hitoshi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 9,275,863
- Issue date Mar 1, 2016
- Renesas Electronics Corporation
- Sumito Numazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power superjunction MOSFET device with resurf regions
- Patent number 9,269,767
- Issue date Feb 23, 2016
- Renesas Electronics Corporation
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including semiconductor chip having epitaxial...
- Patent number 9,252,262
- Issue date Feb 2, 2016
- Renesas Electronics Corporation
- Satoshi Eguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 9,245,973
- Issue date Jan 26, 2016
- Renesas Electronics Corporation
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 9,166,017
- Issue date Oct 20, 2015
- Renesas Electronics Corporation
- Daisuke Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a MOSFET
- Patent number 9,099,550
- Issue date Aug 4, 2015
- Renesas Electronics Corporation
- Nobuyuki Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power superjunction MOSFET device with resurf regions
- Patent number 9,093,288
- Issue date Jul 28, 2015
- Renesas Electronics Corporation
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT and diode
- Patent number 9,064,839
- Issue date Jun 23, 2015
- Renesas Electronics Corporation
- Hitoshi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET
- Patent number 9,041,070
- Issue date May 26, 2015
- Renesas Electronics Corporation
- Satoshi Eguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 9,013,006
- Issue date Apr 21, 2015
- Renesas Electronics Corporation
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,987,819
- Issue date Mar 24, 2015
- Renesas Electronics Corporation
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 8,981,469
- Issue date Mar 17, 2015
- Renesas Electronics Corporation
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,937,350
- Issue date Jan 20, 2015
- Renesas Electronics Corporation
- Hitoshi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a MOSFET and Schottky junction
- Patent number 8,928,071
- Issue date Jan 6, 2015
- Renesas Electronics Corporation
- Nobuyuki Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,796,787
- Issue date Aug 5, 2014
- Renesas Electronics Corporation
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,786,046
- Issue date Jul 22, 2014
- Renesas Electronics Corporation
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240213357
- Publication date Jun 27, 2024
- RENESAS ELECTRONICS CORPORATION
- Tomohiro IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220102538
- Publication date Mar 31, 2022
- RENESAS ELECTRONICS CORPORATION
- Yoshito NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220069111
- Publication date Mar 3, 2022
- RENESAS ELECTRONICS CORPORATION
- Tomohiro IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190326432
- Publication date Oct 24, 2019
- RENESAS ELECTRONICS CORPORATION
- Yoshito NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20190189798
- Publication date Jun 20, 2019
- RENESAS ELECTRONICS CORPORATION
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180350910
- Publication date Dec 6, 2018
- RENESAS ELECTRONICS CORPORATION
- Shigeaki SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20180090610
- Publication date Mar 29, 2018
- RENESAS ELECTRONICS CORPORATION
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20170040445
- Publication date Feb 9, 2017
- RENESAS ELECTRONICS CORPORATION
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-CHANNEL POWER MOSFET
- Publication number 20160351703
- Publication date Dec 1, 2016
- RENESAS ELECTRONICS CORPORATION
- Hitoshi MATSUURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20160190235
- Publication date Jun 30, 2016
- Renesas Electronics Corporation
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20160148923
- Publication date May 26, 2016
- RENESAS ELECTRONICS CORPORATION
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160133505
- Publication date May 12, 2016
- RENESAS ELECTRONICS CORPORATION
- Satoshi Eguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20160126345
- Publication date May 5, 2016
- Renesas Electronics Corporation
- Tomohiro TAMAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SUPERJUNCTION MOSFET DEVICE WITH RESURF REGIONS
- Publication number 20150287778
- Publication date Oct 8, 2015
- Renesas Electronics Corporation
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT AND DIODE
- Publication number 20150255572
- Publication date Sep 10, 2015
- RENESAS ELECTRONICS CORPORATION
- Hitoshi MATSUURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20150228758
- Publication date Aug 13, 2015
- RENESAS ELECTRONICS CORPORATION
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20150200293
- Publication date Jul 16, 2015
- RENESAS ELECTRONICS CORPORATION
- Satoshi EGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150155378
- Publication date Jun 4, 2015
- RENESAS ELECTRONICS CORPORATION
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20150097237
- Publication date Apr 9, 2015
- RENESAS ELECTRONICS CORPORATION
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A MOSFET
- Publication number 20150054069
- Publication date Feb 26, 2015
- RENESAS ELECTRONICS CORPORATION
- NOBUYUKI SHIRAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20150011081
- Publication date Jan 8, 2015
- RENESAS ELECTRONICS CORPORATION
- Sumito Numazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140312418
- Publication date Oct 23, 2014
- Renesas Electronics Corporation
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140299961
- Publication date Oct 9, 2014
- Tomohiro TAMAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20140235020
- Publication date Aug 21, 2014
- RENESAS ELECTRONICS CORPORATION
- Daisuke ARAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20140225189
- Publication date Aug 14, 2014
- RENESAS ELECTRONICS CORPORATION
- Sumito Numazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Manufacturing Method of the Same
- Publication number 20140193968
- Publication date Jul 10, 2014
- RENESAS ELECTRONICS CORPORATION
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER MOSFET
- Publication number 20140191309
- Publication date Jul 10, 2014
- RENESAS ELECTRONICS CORPORATION
- Satoshi Eguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140145260
- Publication date May 29, 2014
- RENESAS ELECTRONICS CORPORATION
- HITOSHI MATSUURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20140027842
- Publication date Jan 30, 2014
- RENESAS ELECTRONICS CORPORATION
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140027847
- Publication date Jan 30, 2014
- RENESAS ELECTRONICS CORPORATION
- Tomohiro Tamaki
- H01 - BASIC ELECTRIC ELEMENTS

YOSHITO NAKAZAWA

Person

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Trench gate semiconductor device with dummy gate electrode and manu...

Semiconductor device

Semiconductor device

Semiconductor device and manufacturing method of the same

Semiconductor device and manufacturing method of the same

Method of manufacturing a P-channel power MOSFET

Power semiconductor device

Power superjunction MOSFET device with resurf regions

Semiconductor device

Semiconductor device and manufacturing method of the same

Semiconductor device including a MOSFET and having a super-junction...

IGBT and diode

Method of fabricating semiconductor device

Power superjunction MOSFET device with resurf regions

Semiconductor device including semiconductor chip having epitaxial...

Semiconductor device and manufacturing method of the same

Method of manufacturing semiconductor device and semiconductor device

Semiconductor device including a MOSFET

Power superjunction MOSFET device with resurf regions

IGBT and diode

Vertical power MOSFET

Semiconductor device and manufacturing method of the same

Semiconductor device

Power semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device including a MOSFET and Schottky junction

Semiconductor device

Semiconductor device and method for manufacturing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

P-CHANNEL POWER MOSFET

POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE

Semiconductor device and method for manufacturing the same

POWER SUPERJUNCTION MOSFET DEVICE WITH RESURF REGIONS

IGBT AND DIODE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Semiconductor Device

SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING A MOSFET

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Semiconductor Device and Manufacturing Method of the Same

VERTICAL POWER MOSFET

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE