Yoshiyuki Fukumoto

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistance device including layered ferromagnetic structure,...
- Patent number 8,865,326
- Issue date Oct 21, 2014
- NEC Corporation
- Yoshiyuki Fukumoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive device and magnetic memory using the same
- Patent number 8,513,748
- Issue date Aug 20, 2013
- NEC Corporation
- Yoshiyuki Fukumoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance device with a diffusion barrier between a conduct...
- Patent number 7,742,263
- Issue date Jun 22, 2010
- NEC Corporation
- Yoshiyuki Fukumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory and manufacturing method for the same
- Patent number 7,582,923
- Issue date Sep 1, 2009
- NEC Corporation
- Yoshiyuki Fukumoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive device and magnetic memory using the same
- Patent number 7,538,402
- Issue date May 26, 2009
- NEC Corporation
- Yoshiyuki Fukumoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance device with a diffusion barrier between a conduct...
- Patent number 7,394,626
- Issue date Jul 1, 2008
- NEC Corporation
- Yoshiyuki Fukumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel magneto-resistance device and magnetic memory using...
- Patent number 7,379,280
- Issue date May 27, 2008
- NEC Corporation
- Yoshiyuki Fukumoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory adopting synthetic antiferromagnet as free magnetic...
- Patent number 7,242,047
- Issue date Jul 10, 2007
- NEC Corporation
- Kaoru Mori
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive device and method for manufacturing same
- Patent number 7,187,525
- Issue date Mar 6, 2007
- NEC Corporation
- Ken-ichi Shimura
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive device and method of producing the same
- Patent number 6,914,257
- Issue date Jul 5, 2005
- NEC Corporation
- Ken-ichi Shimura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE,...
- Publication number 20140346625
- Publication date Nov 27, 2014
- NEC Corporation
- Yoshiyuki Fukumoto
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE,...
- Publication number 20100276771
- Publication date Nov 4, 2010
- NEC Corporation
- Yoshiyuki Fukumoto
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100025852
- Publication date Feb 4, 2010
- Makoto Ueki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Magnetoresistive device and magnetic memory using the same
- Publication number 20090219754
- Publication date Sep 3, 2009
- NEC Corporation
- Yoshiyuki Fukumoto
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE DEVICE WITH A DIFFUSION BARRIER BETWEEN A CONDUCT...
- Publication number 20080278867
- Publication date Nov 13, 2008
- NEC Corporation
- Yoshiyuki Fukumoto
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic Memory and Manufacturing Method For the Same
- Publication number 20080164502
- Publication date Jul 10, 2008
- NEC Corporation
- Yoshiyuki Fukumoto
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive device and magnetic memory using the same
- Publication number 20060262594
- Publication date Nov 23, 2006
- NEC Corporation
- Yoshiyuki Fukumoto
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistance device including layered ferromagnetic structure,...
- Publication number 20060180839
- Publication date Aug 17, 2006
- NEC Corporation
- Yoshiyuki Fukumoto
- G01 - MEASURING TESTING
Information Patent Application
Magnetic tunnel device and magnetic memory using same
- Publication number 20060056114
- Publication date Mar 16, 2006
- Yoshiyuki Fukumoto
- G01 - MEASURING TESTING
Information Patent Application
Magnetic memory adopting synthetic antiferromagnet as free magnetic...
- Publication number 20060038213
- Publication date Feb 23, 2006
- NEC Corporation
- Kaoru Mori
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive device and method for manufacturing same
- Publication number 20050219769
- Publication date Oct 6, 2005
- Ken-ichi Shimura
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistance device and method of fabricating the same
- Publication number 20040145850
- Publication date Jul 29, 2004
- NEC Corporation
- Yoshiyuki Fukumoto
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetoresistive device and method of producing the same
- Publication number 20030008416
- Publication date Jan 9, 2003
- NEC Corporation
- Ken-Ichi Shimura
- B82 - NANO-TECHNOLOGY

Yoshiyuki Fukumoto

Person

Patents Grantslast 30 patents

Magnetoresistance device including layered ferromagnetic structure,...

Magnetoresistive device and magnetic memory using the same

Magnetoresistance device with a diffusion barrier between a conduct...

Magnetic memory and manufacturing method for the same

Magnetoresistive device and magnetic memory using the same

Magnetoresistance device with a diffusion barrier between a conduct...

Magnetic tunnel magneto-resistance device and magnetic memory using...

Magnetic memory adopting synthetic antiferromagnet as free magnetic...

Magnetoresistive device and method for manufacturing same

Magnetoresistive device and method of producing the same

Patents Applicationslast 30 patents

MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE,...

MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE,...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Magnetoresistive device and magnetic memory using the same

MAGNETORESISTANCE DEVICE WITH A DIFFUSION BARRIER BETWEEN A CONDUCT...

Magnetic Memory and Manufacturing Method For the Same

Magnetoresistive device and magnetic memory using the same

Magnetoresistance device including layered ferromagnetic structure,...

Magnetic tunnel device and magnetic memory using same

Magnetic memory adopting synthetic antiferromagnet as free magnetic...

Magnetoresistive device and method for manufacturing same

Magnetoresistance device and method of fabricating the same

Magnetoresistive device and method of producing the same