Yoshiyuki Higashigaki

Person

Kashiwa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for preparing a graphite intercalation compound having a met...
- Patent number 5,404,837
- Issue date Apr 11, 1995
- Sharp Kabushiki Kaisha
- Yoshikazu Yoshimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Materials for thermoelectric and light-heat conversion
- Patent number 5,316,858
- Issue date May 31, 1994
- Sharp Kabushiki Kaisha
- Yoshiyuki Higashigaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing graphite intercalation compound
- Patent number 5,273,778
- Issue date Dec 28, 1993
- Sharp Kabushiki Kaisha
- Yoshikazu Yoshimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for metal or metal compounds inserted between adjacent graph...
- Patent number 5,049,409
- Issue date Sep 17, 1991
- Sharp Kabushiki Kaisha
- Yoshikazu Yoshimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the production of carbon films having an oriented graphi...
- Patent number 4,946,370
- Issue date Aug 7, 1990
- Sharp Kabushiki Kaisha
- Yoshikazu Yoshimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods and materials for thermoelectric and light-heat conversion
- Patent number 4,714,639
- Issue date Dec 22, 1987
- Sharp Kabushiki Kaisha
- Yoshiyuki Higashigaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating single-crystal substrates of silicon carbide
- Patent number 4,623,425
- Issue date Nov 18, 1986
- Sharp Kabushiki Kaisha
- Akira Suzuki
- C30 - CRYSTAL GROWTH

Yoshiyuki Higashigaki

Person

Patents Grantslast 30 patents

Method for preparing a graphite intercalation compound having a met...

Materials for thermoelectric and light-heat conversion

Method for producing graphite intercalation compound

Method for metal or metal compounds inserted between adjacent graph...

Method for the production of carbon films having an oriented graphi...

Methods and materials for thermoelectric and light-heat conversion

Method of fabricating single-crystal substrates of silicon carbide