Yoshiyuki Nakao

Person

Kuwana, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 9,559,058
- Issue date Jan 31, 2017
- Fujitsu Semiconductor Limited
- Masaki Haneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device and semiconductor manu...
- Patent number 8,685,265
- Issue date Apr 1, 2014
- Fujitsu Semiconductor Limited
- Yoshiyuki Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,497,208
- Issue date Jul 30, 2013
- Fujitsu Semiconductor Limited
- Michie Sunayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing a multilayer interconnection structure in a...
- Patent number 8,168,532
- Issue date May 1, 2012
- Fujitsu Limited
- Masaki Haneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device suitable for forming w...
- Patent number 8,071,474
- Issue date Dec 6, 2011
- Fujitsu Semiconductor Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using metal nitride as insulating film and its...
- Patent number 8,067,309
- Issue date Nov 29, 2011
- Fujitsu Semiconductor Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced increase in copper film resistance
- Patent number 8,067,836
- Issue date Nov 29, 2011
- Fujitsu Semiconductor Limited
- Masaki Haneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of semiconductor device having a barrier layer c...
- Patent number 7,935,624
- Issue date May 3, 2011
- Fujitsu Semiconductor Limited
- Nobuyuki Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture method for semiconductor device suitable for forming wi...
- Patent number 7,846,833
- Issue date Dec 7, 2010
- Fujitsu Limited
- Hideki Kitada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,816,279
- Issue date Oct 19, 2010
- Fujitsu Semiconductor Limited
- Michie Sunayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacture method for semiconductor device suitable for forming wi...
- Patent number 7,713,869
- Issue date May 11, 2010
- Fujitsu Limited
- Hideki Kitada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of a semiconductor device
- Patent number 7,507,659
- Issue date Mar 24, 2009
- Fujitsu Microelectronics Limited
- Nobuyuki Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture method for semiconductor device having concave portions...
- Patent number 7,507,666
- Issue date Mar 24, 2009
- Fujitsu Microelectronics Limited
- Yoshiyuki Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device suitable for forming w...
- Patent number 7,413,977
- Issue date Aug 19, 2008
- Fujitsu Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using metal nitride as insulating film
- Patent number 7,256,500
- Issue date Aug 14, 2007
- Fujitsu Limited
- Noriyuki Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using metal nitride as insulating film
- Patent number 7,042,093
- Issue date May 9, 2006
- Fujitsu Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,992,005
- Issue date Jan 31, 2006
- Fujitsu Limited
- Nobuyuki Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,750,541
- Issue date Jun 15, 2004
- Fujitsu Limited
- Nobuyuki Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resist pattern forming method
- Patent number 5,667,942
- Issue date Sep 16, 1997
- Fujitsu Limited
- Yoshiyuki Nakao
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANU...
- Publication number 20120288969
- Publication date Nov 15, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Yoshiyuki Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20120181695
- Publication date Jul 19, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Masaki HANEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110003475
- Publication date Jan 6, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Michie Sunayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE SUITABLE FOR FORMING W...
- Publication number 20100323519
- Publication date Dec 23, 2010
- FUJITSU SEMICONDUCTOR LIMITED
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE SUITABLE FOR FORMING WI...
- Publication number 20100178762
- Publication date Jul 15, 2010
- Fujitsu Limited
- Hideki Kitada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20090321937
- Publication date Dec 31, 2009
- Fujitsu Limited
- Masaki HANEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20090200670
- Publication date Aug 13, 2009
- Fujitsu Microelectronics Limited
- Michie SUNAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20090121355
- Publication date May 14, 2009
- Fujitsu Microelectronics Limited
- Masaki HANEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using metal nitride as insulating film and its...
- Publication number 20090042386
- Publication date Feb 12, 2009
- Fujitsu Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device suitable for forming w...
- Publication number 20080286960
- Publication date Nov 20, 2008
- Fujitsu Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE
- Publication number 20080113506
- Publication date May 15, 2008
- Fujitsu Limited
- Nobuyuki OHTSUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using metal nitride as insulating film
- Publication number 20070252280
- Publication date Nov 1, 2007
- Fujitsu Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication method of semiconductor device
- Publication number 20070173055
- Publication date Jul 26, 2007
- FUJITSU LIMITED
- Nobuyuki Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and its manufacture method
- Publication number 20070048931
- Publication date Mar 1, 2007
- FUJITSU LIMITED
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacture method for semiconductor device having concave portions...
- Publication number 20070049024
- Publication date Mar 1, 2007
- FUJITSU LIMITED
- Yoshiyuki Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacture method for semiconductor device suitable for forming wi...
- Publication number 20070045851
- Publication date Mar 1, 2007
- FUJITSU LIMITED
- Hideki Kitada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using metal nitride as insulating film and its...
- Publication number 20060145348
- Publication date Jul 6, 2006
- FUJITSU LIMITED
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040188839
- Publication date Sep 30, 2004
- FUJITSU LIMITED
- Nobuyuki Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using metal nitride as insulating film and its...
- Publication number 20040004287
- Publication date Jan 8, 2004
- FUJITSU LIMITED
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20020158338
- Publication date Oct 31, 2002
- FUJITSU LIMITED
- Nobuyuki Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS

Yoshiyuki Nakao

Person

Patents Grantslast 30 patents

Semiconductor device and method for manufacturing the same

Manufacturing method of semiconductor device and semiconductor manu...

Semiconductor device and method for manufacturing the same

Method of manufacturing a multilayer interconnection structure in a...

Method of manufacturing semiconductor device suitable for forming w...

Semiconductor device using metal nitride as insulating film and its...

Semiconductor device with reduced increase in copper film resistance

Fabrication method of semiconductor device having a barrier layer c...

Manufacture method for semiconductor device suitable for forming wi...

Semiconductor device and method for manufacturing the same

Manufacture method for semiconductor device suitable for forming wi...

Fabrication process of a semiconductor device

Manufacture method for semiconductor device having concave portions...

Method of manufacturing semiconductor device suitable for forming w...

Semiconductor device using metal nitride as insulating film

Semiconductor device using metal nitride as insulating film

Semiconductor device and method of manufacturing the same

Semiconductor device

Resist pattern forming method

Patents Applicationslast 30 patents

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANU...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE SUITABLE FOR FORMING W...

MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE SUITABLE FOR FORMING WI...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Semiconductor device using metal nitride as insulating film and its...

Method of manufacturing semiconductor device suitable for forming w...

FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE

Semiconductor device using metal nitride as insulating film

Fabrication method of semiconductor device

Semiconductor device and its manufacture method

Manufacture method for semiconductor device having concave portions...

Manufacture method for semiconductor device suitable for forming wi...

Semiconductor device using metal nitride as insulating film and its...

Semiconductor device and method of manufacturing the same

Semiconductor device using metal nitride as insulating film and its...

Semiconductor device and method of manufacturing the same