Yoshiyuki WATANABE

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Hanno-shi, Saitama, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing silicon carbide semiconductor device and si...
- Patent number 10,403,497
- Issue date Sep 3, 2019
- Shindengen Electric Manufacturing Co., Ltd.
- Yusuke Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device, meth...
- Patent number 9,911,811
- Issue date Mar 6, 2018
- Shindengen Electric Manufacturing Co., Ltd.
- Yusuke Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide (SiC) semiconductor device...
- Patent number 9,496,366
- Issue date Nov 15, 2016
- Shindengen Electric Manufacturing Co., Ltd.
- Yusuke Maeyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode
- Patent number 8,937,319
- Issue date Jan 20, 2015
- Shindengen Electric Manufacturing Co., Ltd.
- Yusuke Maeyama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SI...
- Publication number 20180174835
- Publication date Jun 21, 2018
- Shindengen Electric Manufacturing Co., Ltd.
- Yusuke FUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, METH...
- Publication number 20180019307
- Publication date Jan 18, 2018
- SHINDENGEN ELECTRIC MANUFACTURING CO., LTD
- Yusuke FUKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20160056260
- Publication date Feb 25, 2016
- Shindengen Electric Manufacturing Co., Ltd.
- Yusuke MAEYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE
- Publication number 20120228636
- Publication date Sep 13, 2012
- Yusuke MAEYAMA
- H01 - BASIC ELECTRIC ELEMENTS