Yosuke Shimamune

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,865,734
- Issue date Jan 9, 2018
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,577,098
- Issue date Feb 21, 2017
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,401,427
- Issue date Jul 26, 2016
- SOCIONEXT INC.
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fabrication method of semiconductor device and fabrication method o...
- Patent number 9,178,034
- Issue date Nov 3, 2015
- Fujitsu Semiconductor Limited
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,112,027
- Issue date Aug 18, 2015
- SOCIONEXT INC.
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 8,853,673
- Issue date Oct 7, 2014
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fabrication method of semiconductor device and fabrication method o...
- Patent number 8,709,898
- Issue date Apr 29, 2014
- Fujitsu Semiconductor Limited
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,586,438
- Issue date Nov 19, 2013
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,518,785
- Issue date Aug 27, 2013
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxial growth method using halogen containing gate sid...
- Patent number 8,497,191
- Issue date Jul 30, 2013
- Fujitsu Semiconductor Limited
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 8,466,450
- Issue date Jun 18, 2013
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 8,455,324
- Issue date Jun 4, 2013
- Fujitsu Semiconductor Limited
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 8,455,325
- Issue date Jun 4, 2013
- Fujitsu Semiconductor Limited
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 8,409,958
- Issue date Apr 2, 2013
- Fujitsu Semiconductor Limited
- Katsuaki Ookoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,338,831
- Issue date Dec 25, 2012
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication method, semiconductor device, and...
- Patent number 8,293,622
- Issue date Oct 23, 2012
- Fujitsu Semiconductor Limited
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,288,757
- Issue date Oct 16, 2012
- Fujitsu Semiconductor Limited
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 8,283,226
- Issue date Oct 9, 2012
- Fujitsu Semiconductor Limited
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,278,177
- Issue date Oct 2, 2012
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 8,232,191
- Issue date Jul 31, 2012
- Fujitsu Semiconductor Limited
- Masahiro Fukuda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,207,042
- Issue date Jun 26, 2012
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and production method thereof
- Patent number 8,164,085
- Issue date Apr 24, 2012
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel MOS transistor and fabrication process thereof
- Patent number 8,158,498
- Issue date Apr 17, 2012
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with strained transistors and its manufacture
- Patent number 7,985,641
- Issue date Jul 26, 2011
- Fujitsu Semiconductor Limited
- Young Suk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and production method thereof
- Patent number 7,968,414
- Issue date Jun 28, 2011
- Fujitsu Semiconductor Limited
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and production method thereof
- Patent number 7,875,521
- Issue date Jan 25, 2011
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with compressive and tensile stresses
- Patent number 7,816,766
- Issue date Oct 19, 2010
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with strained transistors and its manufacture
- Patent number 7,807,524
- Issue date Oct 5, 2010
- Fujitsu Semiconductor Limited
- Young Suk Kim
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 7,791,064
- Issue date Sep 7, 2010
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and production method thereof
- Patent number 7,683,362
- Issue date Mar 23, 2010
- Fujitsu Microelectronics Limited
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20170117412
- Publication date Apr 27, 2017
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20160308053
- Publication date Oct 20, 2016
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20150295086
- Publication date Oct 15, 2015
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20140361340
- Publication date Dec 11, 2014
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND FABRICATION METHOD O...
- Publication number 20140193960
- Publication date Jul 10, 2014
- FUJITSU SEMICONDUCTOR LIMITED
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20130248930
- Publication date Sep 26, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND FABRICATION METHOD O...
- Publication number 20130210207
- Publication date Aug 15, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120329229
- Publication date Dec 27, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20120171829
- Publication date Jul 5, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20120108025
- Publication date May 3, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Masahiro FUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20120058610
- Publication date Mar 8, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Katsuaki Ookoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120009750
- Publication date Jan 12, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110121315
- Publication date May 26, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20110049533
- Publication date Mar 3, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20110014765
- Publication date Jan 20, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20100301350
- Publication date Dec 2, 2010
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20100301394
- Publication date Dec 2, 2010
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20100210083
- Publication date Aug 19, 2010
- FUJITSU MICROELECTRONICS LIMITED
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20100129971
- Publication date May 27, 2010
- FUJITSU MICROELECTRONICS LIMITED
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20100105184
- Publication date Apr 29, 2010
- Fujitsu Microelectronics Limited
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100015774
- Publication date Jan 21, 2010
- Fujitsu Microelectronics Limited
- Yosuke SHIMAMUNE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and production method thereof
- Publication number 20090280612
- Publication date Nov 12, 2009
- Fujitsu Microelectronics Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRAINED TRANSISTORS AND ITS MANUFACTURE
- Publication number 20090215240
- Publication date Aug 27, 2009
- FUJITSU LIMITED
- Young Suk KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-channel MOS transistor and fabrication process thereof
- Publication number 20090176343
- Publication date Jul 9, 2009
- Fujitsu Microelectronics Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method thereof
- Publication number 20090134381
- Publication date May 28, 2009
- Fujitsu Microelectronics Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device fabricated by selective epitaxial growth method
- Publication number 20090117715
- Publication date May 7, 2009
- FUJITSU LIMITED
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device fabricated by selective epitaxial growth method
- Publication number 20090045471
- Publication date Feb 19, 2009
- FUJITSU LIMITED
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FABRICATION METHOD, SEMICONDUCTOR DEVICE, AND...
- Publication number 20080315254
- Publication date Dec 25, 2008
- Fujitsu Limited
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20080185612
- Publication date Aug 7, 2008
- Fujitsu Limited
- Masahiro FUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20080023773
- Publication date Jan 31, 2008
- FUJITSU LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS

Yosuke Shimamune

Person

Patents Grantslast 30 patents

Semiconductor device and fabrication method thereof

Semiconductor device and fabrication method thereof

Semiconductor device and fabrication method thereof

Fabrication method of semiconductor device and fabrication method o...

Semiconductor device and fabrication method thereof

Semiconductor device and fabrication method thereof

Fabrication method of semiconductor device and fabrication method o...

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Selective epitaxial growth method using halogen containing gate sid...

Semiconductor device and fabrication method thereof

Method of manufacturing a semiconductor device

Method of manufacturing a semiconductor device

Method of manufacturing semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device fabrication method, semiconductor device, and...

Semiconductor device and manufacturing method thereof

Method for manufacturing semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device manufacturing method

Semiconductor device and method of manufacturing the same

Semiconductor device and production method thereof

P-channel MOS transistor and fabrication process thereof

Semiconductor device with strained transistors and its manufacture

Semiconductor device and production method thereof

Semiconductor device and production method thereof

Semiconductor device with compressive and tensile stresses

Semiconductor device with strained transistors and its manufacture

Semiconductor device and fabrication method thereof

Semiconductor device and production method thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND FABRICATION METHOD O...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND FABRICATION METHOD O...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor device and production method thereof

SEMICONDUCTOR DEVICE WITH STRAINED TRANSISTORS AND ITS MANUFACTURE

P-channel MOS transistor and fabrication process thereof

Semiconductor device and fabrication method thereof

Semiconductor device fabricated by selective epitaxial growth method

Semiconductor device fabricated by selective epitaxial growth method

SEMICONDUCTOR DEVICE FABRICATION METHOD, SEMICONDUCTOR DEVICE, AND...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Semiconductor device and method of manufacturing the same