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Youfeng He

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  • Shanghai, CN
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Patents Grantslast 30 patents

  • Information Patent Grant

    Fin field-effect transistor
    • Patent number 10,431,671
    • Issue date Oct 1, 2019
    • Semiconductor Manufacturing International (Shanghai) Corporation
    • Xiaopeng Yu
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Fin field-effect transistor and fabrication method thereof
    • Patent number 9,871,120
    • Issue date Jan 16, 2018
    • Semiconductor Manufacturing International (Shanghai) Corporation
    • Xiaopeng Yu
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Phase change memory
    • Patent number 8,933,428
    • Issue date Jan 13, 2015
    • Semiconductor Manufacturing International (Beijing) Corporation
    • Fumitake Mieno
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device
    • Patent number 8,581,311
    • Issue date Nov 12, 2013
    • Semiconductor Manufacturing International (Beijing) Corporation
    • Youfeng He
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Method for forming semiconductor device
    • Patent number 8,536,001
    • Issue date Sep 17, 2013
    • Semiconductor Manufacturing International (Beijing) Corporation
    • Youfeng He
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Phase change memory and method for fabricating the same
    • Patent number 8,481,348
    • Issue date Jul 9, 2013
    • Semiconductor Manufacturing International Corp
    • Fumitake Mieno
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Method for fabricating a phase change memory
    • Patent number 8,409,883
    • Issue date Apr 2, 2013
    • Semiconductor Manufacturing International Corp
    • Fumitake Mieno
    • H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

  • Information Patent Application

    FIN FIELD-EFFCT TRANSISTOR
    • Publication number 20180097090
    • Publication date Apr 5, 2018
    • Semiconductor Manufacturing Internationa (Shanghai) Corporation
    • XIAOPENG YU
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    FIN FIELD-EFFCT TRANSISTOR AND FABRICATION METHOD THEREOF
    • Publication number 20150380241
    • Publication date Dec 31, 2015
    • Semiconductor Manufacturing International (Shanghai) Corporation
    • XIAOPENG YU
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    TRANSISTOR AND FABRICATION METHOD
    • Publication number 20140191301
    • Publication date Jul 10, 2014
    • Semiconductor Manufacturing International (Shanghai) Corporation
    • YOUFENG HE
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE
    • Publication number 20130320416
    • Publication date Dec 5, 2013
    • Semiconductor Manufacturing International (Beijing) Corporation
    • Youfeng He
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    PHASE CHANGE MEMORY AND METHOD FOR FABRICATING THE SAME
    • Publication number 20130264537
    • Publication date Oct 10, 2013
    • Fumitake Mieno
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    PHASE CHANGE MEMORY AND METHOD FOR FABRICATING THE SAME
    • Publication number 20120161092
    • Publication date Jun 28, 2012
    • Semiconductor Manufacturing International (Beijing) Corporation
    • Fumitake Mieno
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    PHASE CHANGE MEMORY AND METHOD FOR FABRICATING THE SAME
    • Publication number 20120161097
    • Publication date Jun 28, 2012
    • Semiconductor Manufacturing International (Beijing) Corporation
    • Fumitake Mieno
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    • Publication number 20120139016
    • Publication date Jun 7, 2012
    • Semiconductor Manufacturing International (Beijing) Corporation
    • Youfeng He
    • H01 - BASIC ELECTRIC ELEMENTS