Young-Hee Kim

Person

Mohegan Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reduced current leakage semiconductor device
- Patent number 9,722,031
- Issue date Aug 1, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
- Patent number 9,711,417
- Issue date Jul 18, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
- Patent number 9,711,416
- Issue date Jul 18, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dopant junction for a group III-V semiconductor device
- Patent number 9,679,775
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced current leakage semiconductor device
- Patent number 9,627,482
- Issue date Apr 18, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dopant junction for a group III-V semiconductor device
- Patent number 9,418,846
- Issue date Aug 16, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced current leakage semiconductor device
- Patent number 9,397,161
- Issue date Jul 19, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
- Patent number 9,391,171
- Issue date Jul 12, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET field-effect transistors with atomic layer doping
- Patent number 9,287,136
- Issue date Mar 15, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of Ge-containing fins and compound semiconductor fins
- Patent number 9,054,192
- Issue date Jun 9, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field-effect transistors with atomic layer doping
- Patent number 9,048,261
- Issue date Jun 2, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process variability tolerant hard mask for replacement metal gate f...
- Patent number 9,034,748
- Issue date May 19, 2015
- International Business Machines Corporation
- Christopher V. Baiocco
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Integration of a titania layer in an anti-reflective coating
- Patent number 8,962,374
- Issue date Feb 24, 2015
- International Business Machines Corporation
- Satyavolu S. Papa Rao
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Integration of a titania layer in an anti-reflective coating
- Patent number 8,946,844
- Issue date Feb 3, 2015
- International Business Machines Corporation
- Satyavolu S. Papa Rao
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Temperature control device for optoelectronic devices
- Patent number 8,912,032
- Issue date Dec 16, 2014
- International Business Machines Corporation
- Solomon Assefa
- G02 - OPTICS
Information Patent Grant
Integrated circuit tamper detection and response
- Patent number 8,861,728
- Issue date Oct 14, 2014
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried selective emitter formation for photovoltaic devices utilizi...
- Patent number 8,759,139
- Issue date Jun 24, 2014
- International Business Machines Corporation
- Jun Liu
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Replacement metal gate transistors using bi-layer hardmask
- Patent number 8,748,252
- Issue date Jun 10, 2014
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of replacing silicon with metal in integrated circuit chip f...
- Patent number 8,580,635
- Issue date Nov 12, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate CMOS with at least a single gate metal and dual gate die...
- Patent number 8,569,844
- Issue date Oct 29, 2013
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-lithographic method of patterning contacts for a photovoltaic d...
- Patent number 8,445,316
- Issue date May 21, 2013
- International Business Machines Corporation
- Ali Afzali-Ardakani
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
High performance CMOS circuits, and methods for fabricating same
- Patent number 8,383,483
- Issue date Feb 26, 2013
- International Business Machines Corporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suspended germanium photodetector for silicon waveguide
- Patent number 8,178,382
- Issue date May 15, 2012
- International Business Machines Corporation
- Solomon Assefa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and apparatus for fabricating a high-performance band-edge c...
- Patent number 8,097,500
- Issue date Jan 17, 2012
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS transistors with differential oxygen content high-K dielectrics
- Patent number 8,035,173
- Issue date Oct 11, 2011
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using metal/metal nitride bilayers as gate electrodes in self-align...
- Patent number 7,999,323
- Issue date Aug 16, 2011
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suspended germanium photodetector for silicon waveguide
- Patent number 7,902,620
- Issue date Mar 8, 2011
- International Business Machines Corporation
- Solomon Assefa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating a semiconductor structure including one devic...
- Patent number 7,833,849
- Issue date Nov 16, 2010
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS integration scheme employing a silicide electrode and a silici...
- Patent number 7,749,847
- Issue date Jul 6, 2010
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate CMOS with at least a single gate metal and dual gate die...
- Patent number 7,709,902
- Issue date May 4, 2010
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE
- Publication number 20160329211
- Publication date Nov 10, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
- Publication number 20160322500
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
- Publication number 20160322264
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CURRENT LEAKAGE SEMICONDUCTOR DEVICE
- Publication number 20160254193
- Publication date Sep 1, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CURRENT LEAKAGE SEMICONDUCTOR DEVICE
- Publication number 20160254352
- Publication date Sep 1, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE
- Publication number 20160254150
- Publication date Sep 1, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING
- Publication number 20150236118
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
- Publication number 20150214364
- Publication date Jul 30, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF GE-CONTAINING FINS AND COMPOUND SEMICONDUCTOR FINS
- Publication number 20150179739
- Publication date Jun 25, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS VARIABILITY TOLERANT HARD MASK FOR REPLACEMENT METAL GATE F...
- Publication number 20150064897
- Publication date Mar 5, 2015
- International Business Machines Corporation
- Christopher V. Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE TRANSISTORS USING BI-LAYER HARDMASK
- Publication number 20140148003
- Publication date May 29, 2014
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT TAMPER DETECTION AND RESPONSE
- Publication number 20140103286
- Publication date Apr 17, 2014
- International Business Machines Corporation
- Jack O. Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP F...
- Publication number 20140015051
- Publication date Jan 16, 2014
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF A TITANIA LAYER IN AN ANTI-REFLECTIVE COATING
- Publication number 20140000691
- Publication date Jan 2, 2014
- International Business Machines Corporation
- Satyavolu S. PAPA RAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF A TITANIA LAYER IN AN ANTI-REFLECTIVE COATING
- Publication number 20140000693
- Publication date Jan 2, 2014
- International Business Machines Corporation
- Satyavolu S. PAPA RAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP F...
- Publication number 20130140634
- Publication date Jun 6, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE CONTROL DEVICE FOR OPTOELECTRONIC DEVICES
- Publication number 20130137202
- Publication date May 30, 2013
- International Business Machines Corporation
- Solomon Assefa
- G02 - OPTICS
Information Patent Application
BURIED SELECTIVE EMITTER FORMATION FOR PHOTOVOLTAIC DEVICES UTILIZI...
- Publication number 20130045562
- Publication date Feb 21, 2013
- International Business Machines Corporation
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING
- Publication number 20130032883
- Publication date Feb 7, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING
- Publication number 20130032865
- Publication date Feb 7, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED PYRAMID TEXTURE FORMATION ON SINGLE-CRYSTALLINE SILICON
- Publication number 20130025663
- Publication date Jan 31, 2013
- International Business Machines Corporation
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-LITHOGRAPHIC METHOD OF PATTERNING CONTACTS FOR A PHOTOVOLTAIC D...
- Publication number 20120322200
- Publication date Dec 20, 2012
- International Business Machines Corporation
- Ali Afzali-Ardakani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE CONTROL DEVICE FOR OPTOELECTRONIC DEVICES
- Publication number 20120125916
- Publication date May 24, 2012
- International Business Machines Corporation
- Solomon Assefa
- G02 - OPTICS
Information Patent Application
SURFACE TREATMENT OF TRANSPARENT CONDUCTIVE MATERIAL FILMS FOR IMPR...
- Publication number 20110308584
- Publication date Dec 22, 2011
- International Business Machines Corporation
- Pratik P. Joshi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
DUAL TRANSPARENT CONDUCTIVE MATERIAL LAYER FOR IMPROVED PERFORMANCE...
- Publication number 20110308585
- Publication date Dec 22, 2011
- International Business Machines Corporation
- Pratik P. Joshi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
PLASMA TREATMENT AT A P-I JUNCTION FOR INCREASING OPEN CIRCUIT VOLT...
- Publication number 20110308583
- Publication date Dec 22, 2011
- International Business Machines Corporation
- Pratik P. Joshi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
SUSPENDED GERMANIUM PHOTODETECTOR FOR SILICON WAVEGUIDE
- Publication number 20110143482
- Publication date Jun 16, 2011
- International Business Machines Corporation
- Solomon Assefa
- G02 - OPTICS
Information Patent Application
TEMPERATURE CONTROL DEVICE FOR OPTOELECTRONIC DEVICES
- Publication number 20110007761
- Publication date Jan 13, 2011
- International Business Machines Corporation
- Solomon Assefa
- G02 - OPTICS
Information Patent Application
METHOD AND STRUCTURE FOR THRESHOLD VOLTAGE CONTROL AND DRIVE CURREN...
- Publication number 20100244206
- Publication date Sep 30, 2010
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS TRANSISTORS WITH DIFFERENTIAL OXYGEN CONTENT HIGH-K DIELECTRICS
- Publication number 20100148273
- Publication date Jun 17, 2010
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS

Young-Hee Kim

Person

Patents Grantslast 30 patents

Reduced current leakage semiconductor device

Fin field effect transistor including a strained epitaxial semicond...

Fin field effect transistor including a strained epitaxial semicond...

Selective dopant junction for a group III-V semiconductor device

Reduced current leakage semiconductor device

Selective dopant junction for a group III-V semiconductor device

Reduced current leakage semiconductor device

Fin field effect transistor including a strained epitaxial semicond...

FinFET field-effect transistors with atomic layer doping

Integration of Ge-containing fins and compound semiconductor fins

Fabrication of field-effect transistors with atomic layer doping

Process variability tolerant hard mask for replacement metal gate f...

Integration of a titania layer in an anti-reflective coating

Integration of a titania layer in an anti-reflective coating

Temperature control device for optoelectronic devices

Integrated circuit tamper detection and response

Buried selective emitter formation for photovoltaic devices utilizi...

Replacement metal gate transistors using bi-layer hardmask

Method of replacing silicon with metal in integrated circuit chip f...

Metal gate CMOS with at least a single gate metal and dual gate die...

Non-lithographic method of patterning contacts for a photovoltaic d...

High performance CMOS circuits, and methods for fabricating same

Suspended germanium photodetector for silicon waveguide

Method and apparatus for fabricating a high-performance band-edge c...

CMOS transistors with differential oxygen content high-K dielectrics

Using metal/metal nitride bilayers as gate electrodes in self-align...

Suspended germanium photodetector for silicon waveguide

Method of fabricating a semiconductor structure including one devic...

CMOS integration scheme employing a silicide electrode and a silici...

Metal gate CMOS with at least a single gate metal and dual gate die...

Patents Applicationslast 30 patents

SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE

FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...

FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...

REDUCED CURRENT LEAKAGE SEMICONDUCTOR DEVICE

REDUCED CURRENT LEAKAGE SEMICONDUCTOR DEVICE

SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE

FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING

FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...

INTEGRATION OF GE-CONTAINING FINS AND COMPOUND SEMICONDUCTOR FINS

PROCESS VARIABILITY TOLERANT HARD MASK FOR REPLACEMENT METAL GATE F...

REPLACEMENT METAL GATE TRANSISTORS USING BI-LAYER HARDMASK

INTEGRATED CIRCUIT TAMPER DETECTION AND RESPONSE

METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP F...

INTEGRATION OF A TITANIA LAYER IN AN ANTI-REFLECTIVE COATING

INTEGRATION OF A TITANIA LAYER IN AN ANTI-REFLECTIVE COATING

METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP F...

TEMPERATURE CONTROL DEVICE FOR OPTOELECTRONIC DEVICES

BURIED SELECTIVE EMITTER FORMATION FOR PHOTOVOLTAIC DEVICES UTILIZI...

FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING

FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING

INVERTED PYRAMID TEXTURE FORMATION ON SINGLE-CRYSTALLINE SILICON

NON-LITHOGRAPHIC METHOD OF PATTERNING CONTACTS FOR A PHOTOVOLTAIC D...

TEMPERATURE CONTROL DEVICE FOR OPTOELECTRONIC DEVICES

SURFACE TREATMENT OF TRANSPARENT CONDUCTIVE MATERIAL FILMS FOR IMPR...

DUAL TRANSPARENT CONDUCTIVE MATERIAL LAYER FOR IMPROVED PERFORMANCE...

PLASMA TREATMENT AT A P-I JUNCTION FOR INCREASING OPEN CIRCUIT VOLT...

SUSPENDED GERMANIUM PHOTODETECTOR FOR SILICON WAVEGUIDE

TEMPERATURE CONTROL DEVICE FOR OPTOELECTRONIC DEVICES

METHOD AND STRUCTURE FOR THRESHOLD VOLTAGE CONTROL AND DRIVE CURREN...

CMOS TRANSISTORS WITH DIFFERENTIAL OXYGEN CONTENT HIGH-K DIELECTRICS