Youngjae KANG

Person

Suwon-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor interconnect, electrode for semiconductor device, and...
- Patent number 12,014,985
- Issue date Jun 18, 2024
- Samsung Electronics Co., Ltd.
- Youngjae Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wiring material for semiconductor device, wiring for semiconductor...
- Patent number 11,830,814
- Issue date Nov 28, 2023
- Samsung Electronics Co., Ltd.
- Joungeun Yoo
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Semiconductor interconnect, electrode for semiconductor device, and...
- Patent number 11,728,270
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Youngjae Kang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING
- Publication number 20250203883
- Publication date Jun 19, 2025
- Samsung Electronics Co., Ltd.
- Youngjae KANG
Information Patent Application
INFORMATION READING METHOD OF SELF-SELECTING MEMORY DEVICE
- Publication number 20250194438
- Publication date Jun 12, 2025
- Samsung Electronics Co., Ltd.
- Youngjae KANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF IMPLEMENTING MULTI-LEVEL MEMORY USING T...
- Publication number 20250194443
- Publication date Jun 12, 2025
- Samsung Electronics Co., Ltd.
- Changseung LEE
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250176193
- Publication date May 29, 2025
- Samsung Electronics Co., Ltd.
- Changseung LEE
Information Patent Application
CHALCOGENIDE-BASED MEMORY MATERIAL, AND MEMORY DEVICE AND ELECTRONI...
- Publication number 20250098558
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Hajun SUNG
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY STRUCTURE AND PHASE-CHANGE MEMORY DEVICE INCLUD...
- Publication number 20240107778
- Publication date Mar 28, 2024
- Samsung Electronics Co., Ltd.
- Changseung LEE
Information Patent Application
PHASE CHANGE HETEROSTRUCTURE, AND PHASE CHANGE MEMORY DEVICE INCLUD...
- Publication number 20240065118
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- Hajun SUNG
Information Patent Application
WIRING MATERIAL FOR SEMICONDUCTOR DEVICE, WIRING FOR SEMICONDUCTOR...
- Publication number 20240038664
- Publication date Feb 1, 2024
- Samsung Electronics Co., Ltd.
- Joungeun YOO
- B22 - CASTING POWDER METALLURGY
Information Patent Application
SEMICONDUCTOR INTERCONNECT, ELECTRODE FOR SEMICONDUCTOR DEVICE, AND...
- Publication number 20230343709
- Publication date Oct 26, 2023
- Samsung Electronics Co., Ltd.
- Youngjae KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHALCOGENIDE MATERIAL, SWITCHING DEVICE INCLUDING THE CHALCOGENIDE...
- Publication number 20230329007
- Publication date Oct 12, 2023
- Samsung Electronics Co., Ltd.
- Hajun SUNG
Information Patent Application
WIRING MATERIAL FOR SEMICONDUCTOR DEVICE, WIRING FOR SEMICONDUCTOR...
- Publication number 20220068824
- Publication date Mar 3, 2022
- Samsung Electronics Co., Ltd.
- Joungeun YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTERCONNECT, ELECTRODE FOR SEMICONDUCTOR DEVICE, AND...
- Publication number 20220028792
- Publication date Jan 27, 2022
- Samsung Electronics Co., Ltd.
- Youngjae KANG
- H01 - BASIC ELECTRIC ELEMENTS

Youngjae KANG

Person

Patents Grantslast 30 patents

Semiconductor interconnect, electrode for semiconductor device, and...

Wiring material for semiconductor device, wiring for semiconductor...

Semiconductor interconnect, electrode for semiconductor device, and...

Patents Applicationslast 30 patents

VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING

INFORMATION READING METHOD OF SELF-SELECTING MEMORY DEVICE

MEMORY DEVICE AND METHOD OF IMPLEMENTING MULTI-LEVEL MEMORY USING T...

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

CHALCOGENIDE-BASED MEMORY MATERIAL, AND MEMORY DEVICE AND ELECTRONI...

PHASE-CHANGE MEMORY STRUCTURE AND PHASE-CHANGE MEMORY DEVICE INCLUD...

PHASE CHANGE HETEROSTRUCTURE, AND PHASE CHANGE MEMORY DEVICE INCLUD...

WIRING MATERIAL FOR SEMICONDUCTOR DEVICE, WIRING FOR SEMICONDUCTOR...

SEMICONDUCTOR INTERCONNECT, ELECTRODE FOR SEMICONDUCTOR DEVICE, AND...

CHALCOGENIDE MATERIAL, SWITCHING DEVICE INCLUDING THE CHALCOGENIDE...

WIRING MATERIAL FOR SEMICONDUCTOR DEVICE, WIRING FOR SEMICONDUCTOR...

SEMICONDUCTOR INTERCONNECT, ELECTRODE FOR SEMICONDUCTOR DEVICE, AND...