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Youngjin Park
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Poughkeepsie, NY, US
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last 30 patents
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Patent Grant
Method for fabricating 4F2 memory cells with improved gate conducto...
Patent number
6,355,520
Issue date
Mar 12, 2002
Infineon Technologies AG
Youngjin Park
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabrication of enlarged stacked capacitors using isotrop...
Patent number
6,294,436
Issue date
Sep 25, 2001
Infineon Technologies AG
Youngjin Park
H01 - BASIC ELECTRIC ELEMENTS