Youseok SUH

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor having a source/drain contact with a single inner spacer
- Patent number 11,901,434
- Issue date Feb 13, 2024
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage current reduction in polysilicon-on-active-edge structures
- Patent number 11,444,201
- Issue date Sep 13, 2022
- QUALCOMM Incorporated
- Youn Sung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact for semiconductor device
- Patent number 10,833,017
- Issue date Nov 10, 2020
- QUALCOMM Incorporated
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for fabrication of gated diodes with selective...
- Patent number 10,600,774
- Issue date Mar 24, 2020
- QUALCOMM Incorporated
- Youn Sung Choi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOURCE/DRAIN CONTACTS BETWEEN TRANSISTOR GATES WITH ABBREVIATED INN...
- Publication number 20230009977
- Publication date Jan 12, 2023
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HAVING A SOURCE/DRAIN CONTACT WITH A SINGLE INNER SPACER
- Publication number 20220352347
- Publication date Nov 3, 2022
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-TO-CONTACT SHORT PREVENTION WITH AN INNER SPACER
- Publication number 20220216328
- Publication date Jul 7, 2022
- QUALCOMM Incorporated
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE CURRENT REDUCTION IN POLYSILICON-ON-ACTIVE-EDGE STRUCTURES
- Publication number 20210305429
- Publication date Sep 30, 2021
- QUALCOMM Incorporated
- Youn Sung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR (FET) (FINFET) CIRCUITS EMPLOYING REPLA...
- Publication number 20210143153
- Publication date May 13, 2021
- QUALCOMM Incorporated
- Kwanyong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR FABRICATION OF GATED DIODES WITH SELECTIVE...
- Publication number 20190312025
- Publication date Oct 10, 2019
- QUALCOMM Incorporated
- Youn Sung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FOR SEMICONDUCTOR DEVICE
- Publication number 20180076139
- Publication date Mar 15, 2018
- QUALCOMM Incorporated
- Yanxiang LIU
- H01 - BASIC ELECTRIC ELEMENTS

Youseok SUH

Person

Patents Grantslast 30 patents

Semiconductor having a source/drain contact with a single inner spacer

Leakage current reduction in polysilicon-on-active-edge structures

Contact for semiconductor device

Systems and methods for fabrication of gated diodes with selective...

Patents Applicationslast 30 patents

SOURCE/DRAIN CONTACTS BETWEEN TRANSISTOR GATES WITH ABBREVIATED INN...

SEMICONDUCTOR HAVING A SOURCE/DRAIN CONTACT WITH A SINGLE INNER SPACER

GATE-TO-CONTACT SHORT PREVENTION WITH AN INNER SPACER

LEAKAGE CURRENT REDUCTION IN POLYSILICON-ON-ACTIVE-EDGE STRUCTURES

FIN FIELD-EFFECT TRANSISTOR (FET) (FINFET) CIRCUITS EMPLOYING REPLA...

SYSTEMS AND METHODS FOR FABRICATION OF GATED DIODES WITH SELECTIVE...

CONTACT FOR SEMICONDUCTOR DEVICE