Yu-Hao Tsai

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
In-situ adsorbate formation for plasma etch process
- Patent number 12,308,212
- Issue date May 20, 2025
- Tokyo Electron Limited
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cyclic method for reactive development of photoresists
- Patent number 12,287,578
- Issue date Apr 29, 2025
- Tokyo Electron Limited
- Hamed Hajibabaeinajafabadi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective and isotropic etch of silicon over silicon-germanium allo...
- Patent number 12,272,558
- Issue date Apr 8, 2025
- Tokyo Electron Limited
- Matthew Flaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of patterning small features
- Patent number 11,837,471
- Issue date Dec 5, 2023
- Tokyo Electron Limited
- Katie Lutker-Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-throughput dry etching of films containing silicon-oxygen comp...
- Patent number 11,804,380
- Issue date Oct 31, 2023
- Tokyo Electron Limited
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall protection layer formation for substrate processing
- Patent number 11,232,954
- Issue date Jan 25, 2022
- Tokyo Electron Limited
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etch (ALE) of tungsten or other metal layers
- Patent number 11,189,499
- Issue date Nov 30, 2021
- Tokyo Electron Limited
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective plasma etching of silicon oxide relative to silicon nitri...
- Patent number 11,158,517
- Issue date Oct 26, 2021
- Tokyo Electron Limited
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly selective silicon oxide/silicon nitride etching by selective...
- Patent number 11,152,217
- Issue date Oct 19, 2021
- Tokyo Electron Limited
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Independent control of etching and passivation gas components for h...
- Patent number 11,024,508
- Issue date Jun 1, 2021
- Tokyo Electron Limited
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE NON-PLASMA DEPOSITION OF MASK PROTECTION MATERIAL
- Publication number 20250188608
- Publication date Jun 12, 2025
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELECTIVE ATOMIC LAYER ETCH OF Si-BASED MATERIALS
- Publication number 20250046614
- Publication date Feb 6, 2025
- TOKYO ELECTRON LIMITED
- Mehrdad Rostami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sidewall Inorganic Passivation for Dielectric Etching Via Surface M...
- Publication number 20240162043
- Publication date May 16, 2024
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO SELECTIVELY ETCH SILICON NITRIDE TO SILICON OXIDE USING W...
- Publication number 20240128089
- Publication date Apr 18, 2024
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-Situ Adsorbate Formation for Dielectric Etch
- Publication number 20240112888
- Publication date Apr 4, 2024
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-Situ Adsorbate Formation for Plasma Etch Process
- Publication number 20240112887
- Publication date Apr 4, 2024
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA SURFACE TREATMENT FOR WAFER BONDING METHODS
- Publication number 20240071746
- Publication date Feb 29, 2024
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cyclic Method for Reactive Development of Photoresists
- Publication number 20240053684
- Publication date Feb 15, 2024
- TOKYO ELECTRON LIMITED
- Hamed Hajibabaeinajafabadi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
SELECTIVE AND ISOTROPIC ETCH OF SILICON OVER SILICON-GERMANIUM ALLO...
- Publication number 20230360921
- Publication date Nov 9, 2023
- TOKYO ELECTRON LIMITED
- Matthew FLAUGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ETCHING FOR SEMICONDUCTOR FABRICATION
- Publication number 20230307242
- Publication date Sep 28, 2023
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Focus Ring Regeneration
- Publication number 20230081862
- Publication date Mar 16, 2023
- TOKYO ELECTRON LIMITED
- Yanxiang Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-THROUGHPUT DRY ETCHING OF FILMS CONTAINING SILICON-OXYGEN COMP...
- Publication number 20220157615
- Publication date May 19, 2022
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sidewall Protection Layer formation for Substrate Processing
- Publication number 20210287908
- Publication date Sep 16, 2021
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-THROUGHPUT DRY ETCHING OF SILICON OXIDE AND SILICON NITRIDE MA...
- Publication number 20210233775
- Publication date Jul 29, 2021
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF PATTERNING SMALL FEATURES
- Publication number 20210183656
- Publication date Jun 17, 2021
- TOKYO ELECTRON LIMITED
- Katie Lutker-Lee
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
HIGHLY SELECTIVE SILICON OXIDE/SILICON NITRIDE ETCHING BY SELECTIVE...
- Publication number 20200402808
- Publication date Dec 24, 2020
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDEPENDENT CONTROL OF ETCHING AND PASSIVATION GAS COMPONENTS FOR H...
- Publication number 20200321218
- Publication date Oct 8, 2020
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCH (ALE) OF TUNGSTEN OR OTHER METAL LAYERS
- Publication number 20200312673
- Publication date Oct 1, 2020
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE PLASMA ETCHING OF SILICON OXIDE RELATIVE TO SILICON NITRI...
- Publication number 20200234968
- Publication date Jul 23, 2020
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Yu-Hao Tsai

Person

Patents Grantslast 30 patents

In-situ adsorbate formation for plasma etch process

Cyclic method for reactive development of photoresists

Selective and isotropic etch of silicon over silicon-germanium allo...

Methods of patterning small features

High-throughput dry etching of films containing silicon-oxygen comp...

Sidewall protection layer formation for substrate processing

Atomic layer etch (ALE) of tungsten or other metal layers

Selective plasma etching of silicon oxide relative to silicon nitri...

Highly selective silicon oxide/silicon nitride etching by selective...

Independent control of etching and passivation gas components for h...

Patents Applicationslast 30 patents

SELECTIVE NON-PLASMA DEPOSITION OF MASK PROTECTION MATERIAL

SELECTIVE ATOMIC LAYER ETCH OF Si-BASED MATERIALS

Sidewall Inorganic Passivation for Dielectric Etching Via Surface M...

METHOD TO SELECTIVELY ETCH SILICON NITRIDE TO SILICON OXIDE USING W...

In-Situ Adsorbate Formation for Dielectric Etch

In-Situ Adsorbate Formation for Plasma Etch Process

PLASMA SURFACE TREATMENT FOR WAFER BONDING METHODS

Cyclic Method for Reactive Development of Photoresists

SELECTIVE AND ISOTROPIC ETCH OF SILICON OVER SILICON-GERMANIUM ALLO...

METHOD FOR ETCHING FOR SEMICONDUCTOR FABRICATION

Focus Ring Regeneration

HIGH-THROUGHPUT DRY ETCHING OF FILMS CONTAINING SILICON-OXYGEN COMP...

Sidewall Protection Layer formation for Substrate Processing

HIGH-THROUGHPUT DRY ETCHING OF SILICON OXIDE AND SILICON NITRIDE MA...

METHODS OF PATTERNING SMALL FEATURES

HIGHLY SELECTIVE SILICON OXIDE/SILICON NITRIDE ETCHING BY SELECTIVE...

INDEPENDENT CONTROL OF ETCHING AND PASSIVATION GAS COMPONENTS FOR H...

ATOMIC LAYER ETCH (ALE) OF TUNGSTEN OR OTHER METAL LAYERS

SELECTIVE PLASMA ETCHING OF SILICON OXIDE RELATIVE TO SILICON NITRI...