Yu Lu

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Error correcting memory systems
- Patent number 12,124,332
- Issue date Oct 22, 2024
- SuperMem, Inc.
- Yu Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Bit line sensing circuit comprising a sample and hold circuit
- Patent number 11,935,601
- Issue date Mar 19, 2024
- SuperMem, Inc.
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Error correcting memory systems
- Patent number 11,748,194
- Issue date Sep 5, 2023
- SuperMem, Inc.
- Yu Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Error correcting memory systems
- Patent number 11,204,835
- Issue date Dec 21, 2021
- SuperMem, Inc.
- Yu Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor metallization structure
- Patent number 10,109,674
- Issue date Oct 23, 2018
- QUALCOMM Incorporated
- Yu Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Self-compensation of stray field of perpendicular magnetic elements
- Patent number 10,043,967
- Issue date Aug 7, 2018
- QUALCOMM Incorporated
- Wei-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary magnetic tunnel junction (MTJ) bit cell with shared b...
- Patent number 10,008,537
- Issue date Jun 26, 2018
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrode structure for resistive memory device
- Patent number 9,865,798
- Issue date Jan 9, 2018
- QUALCOMM Incorporated
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) device array
- Patent number 9,728,718
- Issue date Aug 8, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoupling of source line layout from access transistor contact pla...
- Patent number 9,721,634
- Issue date Aug 1, 2017
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
High aspect ratio vertical interconnect access (via) interconnectio...
- Patent number 9,704,919
- Issue date Jul 11, 2017
- QUALCOMM Incorporated
- Yu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shadow-effect compensated fabrication of magnetic tunnel junction (...
- Patent number 9,666,792
- Issue date May 30, 2017
- QUALCOMM Incorporated
- Wei-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device with resistance-based storage...
- Patent number 9,647,037
- Issue date May 9, 2017
- QUALCOMM Incorporated
- Yu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
De-integrated trench formation for advanced MRAM integration
- Patent number 9,614,143
- Issue date Apr 4, 2017
- QUALCOMM Incorporated
- Yu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM integration techniques for technology scaling
- Patent number 9,595,662
- Issue date Mar 14, 2017
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
High dielectric constant/metal gate (HK/MG) compatible floating gat...
- Patent number 9,576,801
- Issue date Feb 21, 2017
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) device array
- Patent number 9,570,509
- Issue date Feb 14, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse complement magnetic tunnel junction (MTJ) bit cells employi...
- Patent number 9,548,096
- Issue date Jan 17, 2017
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM integration with low-K inter-metal dielectric for reduced para...
- Patent number 9,548,333
- Issue date Jan 17, 2017
- QUALCOMM Incorporated
- Yu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential magnetic tunnel junction pair including a sense layer...
- Patent number 9,524,765
- Issue date Dec 20, 2016
- QUALCOMM Incorporated
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Reverse complement magnetic tunnel junction (MTJ) bit cells employi...
- Patent number 9,514,795
- Issue date Dec 6, 2016
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile multiple time programmable memory device
- Patent number 9,508,439
- Issue date Nov 29, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically reconfigurable interposer with built-in resistive memory
- Patent number 9,502,469
- Issue date Nov 22, 2016
- QUALCOMM Incorporated
- Yu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared source line magnetic tunnel junction (MTJ) bit cells employi...
- Patent number 9,496,314
- Issue date Nov 15, 2016
- QUALCOMM Incorporated
- Yu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-lithographic patterning of magnetic tunneling junction devices
- Patent number 9,490,424
- Issue date Nov 8, 2016
- QUALCOMM Incorporated
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching film structure for magnetic random access memory (MRAM) cell
- Patent number 9,461,094
- Issue date Oct 4, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-bit spin torque transfer magnetoresistive random access memor...
- Patent number 9,437,272
- Issue date Sep 6, 2016
- QUALCOMM Incorporated
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM integration techniques for technology scaling
- Patent number 9,406,875
- Issue date Aug 2, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Sub-lithographic patterning of magnetic tunneling junction devices
- Patent number 9,362,336
- Issue date Jun 7, 2016
- QUALCOMM Incorporated
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Etch-resistant protective coating for a magnetic tunnel junction de...
- Patent number 9,349,939
- Issue date May 24, 2016
- QUALCOMM Incorporated
- Yu Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ERROR CORRECTING MEMORY SYSTEMS
- Publication number 20240054050
- Publication date Feb 15, 2024
- SuperMem, Inc.
- Yu LU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMPUTING MEMORY SYSTEMS
- Publication number 20220399060
- Publication date Dec 15, 2022
- SuperMem, Inc.
- Yu LU
- G11 - INFORMATION STORAGE
Information Patent Application
ERROR CORRECTING MEMORY SYSTEMS
- Publication number 20220188187
- Publication date Jun 16, 2022
- SuperMem, Inc.
- Yu LU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ERROR CORRECTING MEMORY SYSTEMS
- Publication number 20210311827
- Publication date Oct 7, 2021
- SuperMem, Inc.
- Yu LU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY
- Publication number 20170104153
- Publication date Apr 13, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETRESISTIVE RANDOM-ACCESS MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20170084819
- Publication date Mar 23, 2017
- QUALCOMM Incorporated
- Yu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH RESISTANCE-BASED STORAGE...
- Publication number 20170062526
- Publication date Mar 2, 2017
- QUALCOMM Incorporated
- Yu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHADOW-EFFECT COMPENSATED FABRICATION OF MAGNETIC TUNNEL JUNCTION (...
- Publication number 20170047510
- Publication date Feb 16, 2017
- QUALCOMM Incorporated
- Wei-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION PROCESS FOR A MEMORY DEVICE
- Publication number 20170047374
- Publication date Feb 16, 2017
- QUALCOMM Incorporated
- Yu LU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BIT CELL WITH SHARED BIT LINE
- Publication number 20160372518
- Publication date Dec 22, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Application
DE-INTEGRATED TRENCH FORMATION FOR ADVANCED MRAM INTEGRATION
- Publication number 20160365505
- Publication date Dec 15, 2016
- QUALCOMM Incorporated
- Yu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM INTEGRATION TECHNIQUES FOR TECHNOLOGY SCALING
- Publication number 20160329488
- Publication date Nov 10, 2016
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DECOUPLING OF SOURCE LINE LAYOUT FROM ACCESS TRANSISTOR CONTACT PLA...
- Publication number 20160315248
- Publication date Oct 27, 2016
- QUALCOMM Incorporated
- Xiaochun Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-BIT SPIN TORQUE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMOR...
- Publication number 20160267957
- Publication date Sep 15, 2016
- QUALCOMM Incorporated
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY (MRAM) BIT CELLS EMPLOYING SOURCE LIN...
- Publication number 20160254318
- Publication date Sep 1, 2016
- QUALCOMM Incorporated
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Application
SUB-LITHOGRAPHIC PATTERNING OF MAGNETIC TUNNELING JUNCTION DEVICES
- Publication number 20160254446
- Publication date Sep 1, 2016
- QUALCOMM Incorporated
- Yu LU
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRODE STRUCTURE FOR RESISTIVE MEMORY DEVICE
- Publication number 20160248002
- Publication date Aug 25, 2016
- QUALCOMM Incorporated
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY
- Publication number 20160225817
- Publication date Aug 4, 2016
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTANCE METAL ETCH-STOP PLATE FOR METAL FLYOVER LAYER
- Publication number 20160172456
- Publication date Jun 16, 2016
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DIELECTRIC CONSTANT/METAL GATE (HK/MG) COMPATIBLE FLOATING GAT...
- Publication number 20160155748
- Publication date Jun 2, 2016
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) INTEGRATION W...
- Publication number 20160133828
- Publication date May 12, 2016
- QUALCOMM Incorporated
- Yu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT CONDUCTIVE HARD MASK FOR MULTI-STEP MAGNETIC TUNNEL JUN...
- Publication number 20160133833
- Publication date May 12, 2016
- QUALCOMM Incorporated
- Yu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY RECONFIGURABLE INTERPOSER WITH BUILT-IN RESISTIVE MEMORY
- Publication number 20160126291
- Publication date May 5, 2016
- QUALCOMM Incorporated
- Yu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM INTEGRATION WITH LOW-K INTER-METAL DIELECTRIC FOR REDUCED PARA...
- Publication number 20160093668
- Publication date Mar 31, 2016
- QUALCOMM Incorporated
- Yu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-LITHOGRAPHIC PATTERNING OF MAGNETIC TUNNELING JUNCTION DEVICES
- Publication number 20160079307
- Publication date Mar 17, 2016
- QUALCOMM Incorporated
- Yu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL MAGNETIC TUNNEL JUNCTION PAIR INCLUDING A SENSE LAYER...
- Publication number 20160049185
- Publication date Feb 18, 2016
- QUALCOMM Incorporated
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE WITH ZERO-TRANSISTOR, ONE-RESISTOR BIT CELL...
- Publication number 20160043137
- Publication date Feb 11, 2016
- QUALCOMM Incorporated
- Yu LU
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-COMPENSATION OF STRAY FIELD OF PERPENDICULAR MAGNETIC ELEMENTS
- Publication number 20160043304
- Publication date Feb 11, 2016
- QUALCOMM Incorporated
- Wei-Chuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING FILM STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL
- Publication number 20160020250
- Publication date Jan 21, 2016
- QUALCOMM Incorporated
- Xia LI
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MULTIPLE TIME PROGRAMMABLE MEMORY DEVICE
- Publication number 20160012896
- Publication date Jan 14, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Error correcting memory systems

Bit line sensing circuit comprising a sample and hold circuit

Error correcting memory systems

Error correcting memory systems

Semiconductor metallization structure

Self-compensation of stray field of perpendicular magnetic elements

Complementary magnetic tunnel junction (MTJ) bit cell with shared b...

Electrode structure for resistive memory device

Magnetic tunnel junction (MTJ) device array

Decoupling of source line layout from access transistor contact pla...

High aspect ratio vertical interconnect access (via) interconnectio...

Shadow-effect compensated fabrication of magnetic tunnel junction (...

Resistive random access memory device with resistance-based storage...

De-integrated trench formation for advanced MRAM integration

MRAM integration techniques for technology scaling

High dielectric constant/metal gate (HK/MG) compatible floating gat...

Magnetic tunnel junction (MTJ) device array

Reverse complement magnetic tunnel junction (MTJ) bit cells employi...

MRAM integration with low-K inter-metal dielectric for reduced para...

Differential magnetic tunnel junction pair including a sense layer...

Reverse complement magnetic tunnel junction (MTJ) bit cells employi...

Non-volatile multiple time programmable memory device

Electrically reconfigurable interposer with built-in resistive memory

Shared source line magnetic tunnel junction (MTJ) bit cells employi...

Sub-lithographic patterning of magnetic tunneling junction devices

Switching film structure for magnetic random access memory (MRAM) cell

Multi-bit spin torque transfer magnetoresistive random access memor...

MRAM integration techniques for technology scaling

Sub-lithographic patterning of magnetic tunneling junction devices

Etch-resistant protective coating for a magnetic tunnel junction de...

Patents Applicationslast 30 patents

ERROR CORRECTING MEMORY SYSTEMS

COMPUTING MEMORY SYSTEMS

ERROR CORRECTING MEMORY SYSTEMS

ERROR CORRECTING MEMORY SYSTEMS

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY

MAGNETRESISTIVE RANDOM-ACCESS MEMORY AND FABRICATION METHOD THEREOF

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH RESISTANCE-BASED STORAGE...

SHADOW-EFFECT COMPENSATED FABRICATION OF MAGNETIC TUNNEL JUNCTION (...

METALLIZATION PROCESS FOR A MEMORY DEVICE

BIT CELL WITH SHARED BIT LINE

DE-INTEGRATED TRENCH FORMATION FOR ADVANCED MRAM INTEGRATION

MRAM INTEGRATION TECHNIQUES FOR TECHNOLOGY SCALING

DECOUPLING OF SOURCE LINE LAYOUT FROM ACCESS TRANSISTOR CONTACT PLA...

MULTI-BIT SPIN TORQUE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMOR...

MAGNETIC RANDOM ACCESS MEMORY (MRAM) BIT CELLS EMPLOYING SOURCE LIN...

SUB-LITHOGRAPHIC PATTERNING OF MAGNETIC TUNNELING JUNCTION DEVICES

ELECTRODE STRUCTURE FOR RESISTIVE MEMORY DEVICE

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY

HIGH RESISTANCE METAL ETCH-STOP PLATE FOR METAL FLYOVER LAYER

HIGH DIELECTRIC CONSTANT/METAL GATE (HK/MG) COMPATIBLE FLOATING GAT...

EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) INTEGRATION W...

REPLACEMENT CONDUCTIVE HARD MASK FOR MULTI-STEP MAGNETIC TUNNEL JUN...

ELECTRICALLY RECONFIGURABLE INTERPOSER WITH BUILT-IN RESISTIVE MEMORY

MRAM INTEGRATION WITH LOW-K INTER-METAL DIELECTRIC FOR REDUCED PARA...

SUB-LITHOGRAPHIC PATTERNING OF MAGNETIC TUNNELING JUNCTION DEVICES

DIFFERENTIAL MAGNETIC TUNNEL JUNCTION PAIR INCLUDING A SENSE LAYER...

RESISTIVE MEMORY DEVICE WITH ZERO-TRANSISTOR, ONE-RESISTOR BIT CELL...

SELF-COMPENSATION OF STRAY FIELD OF PERPENDICULAR MAGNETIC ELEMENTS

SWITCHING FILM STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL

NON-VOLATILE MULTIPLE TIME PROGRAMMABLE MEMORY DEVICE