Yuan-Jen Lee

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 12,167,701
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 12,167,699
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 11,956,971
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 11,573,270
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 11,569,441
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully compensated synthetic ferromagnet for spintronics applications
- Patent number 11,563,170
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal stability by doping of oxide capping layer for spin to...
- Patent number 11,316,098
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 11,309,489
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 11,054,471
- Issue date Jul 6, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method and circuits for programming STT-MRAM cells for reducing bac...
- Patent number 10,978,124
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 10,957,851
- Issue date Mar 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Initialization process for magnetic random access memory (MRAM) pro...
- Patent number 10,867,651
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Jen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 10,784,310
- Issue date Sep 22, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 10,763,428
- Issue date Sep 1, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and circuits for programming STT-MRAM cells for reducing ba...
- Patent number 10,699,765
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,658,577
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully compensated synthetic ferromagnet for spintronics applications
- Patent number 10,522,747
- Issue date Dec 31, 2019
- TAIWAN SEMICONDUCTOR MANUFACUTING COMPANY, LTD.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 10,522,752
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal stability by doping of oxide capping layer for spin to...
- Patent number 10,522,744
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 10,509,074
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,431,736
- Issue date Oct 1, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Initialization process for magnetic random access memory (MRAM) pro...
- Patent number 10,325,639
- Issue date Jun 18, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Jen Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Fully compensated synthetic ferromagnet for spintronics applications
- Patent number 10,230,044
- Issue date Mar 12, 2019
- Headway Technologies, Inc.
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer structure for reducing film roughness in magnetic devices
- Patent number 10,115,892
- Issue date Oct 30, 2018
- Headway Technologies, Inc.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive reference scheme for magnetic memory applications
- Patent number 10,102,896
- Issue date Oct 16, 2018
- Headway Technologies, Inc.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,014,465
- Issue date Jul 3, 2018
- Headway Technologies, Inc.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 9,842,988
- Issue date Dec 12, 2017
- Headway Technologies, Inc.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Implementation of a one time programmable memory using a MRAM stack...
- Patent number 9,805,816
- Issue date Oct 31, 2017
- Headway Technologies, Inc.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayer structure for reducing film roughness in magnetic devices
- Patent number 9,780,299
- Issue date Oct 3, 2017
- Headway Technologies, Inc.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive reference scheme for magnetic memory applications
- Patent number 9,747,965
- Issue date Aug 29, 2017
- Headway Technologies, Inc.
- Guenole Jan
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20240381779
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20220246841
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20220238798
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20210325460
- Publication date Oct 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20210210680
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20210013260
- Publication date Jan 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20200395534
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Circuits for Programming STT-MRAM Cells for Reducing Bac...
- Publication number 20200327918
- Publication date Oct 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200279995
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20200152698
- Publication date May 14, 2020
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
- Publication number 20200144487
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20200144494
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20200144486
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20200116790
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200028073
- Publication date Jan 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Initialization Process for Magnetic Random Access Memory (MRAM) Pro...
- Publication number 20190311754
- Publication date Oct 10, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Jen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20190257881
- Publication date Aug 22, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
- Publication number 20190189911
- Publication date Jun 20, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Initialization Process for Magnetic Random Access Memory (MRAM) Pro...
- Publication number 20190156876
- Publication date May 23, 2019
- HEADWAY TECHNOLOGIES, INC.
- Yuan-Jen Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20190140168
- Publication date May 9, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20190109277
- Publication date Apr 11, 2019
- HEADWAY TECHNOLOGIES, INC.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20190088866
- Publication date Mar 21, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Methods and Circuits for Programming STT-MRAM Cells for Reducing Ba...
- Publication number 20180358071
- Publication date Dec 13, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20180323371
- Publication date Nov 8, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20180175287
- Publication date Jun 21, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
- Publication number 20180026179
- Publication date Jan 25, 2018
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Adaptive Reference Scheme for Magnetic Memory Applications
- Publication number 20170352395
- Publication date Dec 7, 2017
- HEADWAY TECHNOLOGIES, INC.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20170256703
- Publication date Sep 7, 2017
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adaptive Reference Scheme for Magnetic Memory Applications
- Publication number 20170186472
- Publication date Jun 29, 2017
- HEADWAY TECHNOLOGIES, INC.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20170148977
- Publication date May 25, 2017
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE

Yuan-Jen Lee

Person

Patents Grantslast 30 patents

Magnetic tunnel junction with low defect rate after high temperatur...

Magnetic layer for magnetic random access memory (MRAM) by moment e...

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Electrical testing apparatus for spintronics devices

Maintaining coercive field after high temperature anneal for magnet...

Fully compensated synthetic ferromagnet for spintronics applications

High thermal stability by doping of oxide capping layer for spin to...

Magnetic tunnel junction with low defect rate after high temperatur...

Electrical testing apparatus for spintronics devices

Method and circuits for programming STT-MRAM cells for reducing bac...

Magnetic layer for magnetic random access memory (MRAM) by moment e...

Initialization process for magnetic random access memory (MRAM) pro...

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Magnetic tunnel junction with low defect rate after high temperatur...

Methods and circuits for programming STT-MRAM cells for reducing ba...

Maintaining coercive field after high temperature anneal for magnet...

Fully compensated synthetic ferromagnet for spintronics applications

Magnetic layer for magnetic random access memory (MRAM) by moment e...

High thermal stability by doping of oxide capping layer for spin to...

Electrical testing apparatus for spintronics devices

Maintaining coercive field after high temperature anneal for magnet...

Initialization process for magnetic random access memory (MRAM) pro...

Fully compensated synthetic ferromagnet for spintronics applications

Multilayer structure for reducing film roughness in magnetic devices

Adaptive reference scheme for magnetic memory applications

Maintaining coercive field after high temperature anneal for magnet...

Magnetic tunnel junction with low defect rate after high temperatur...

Implementation of a one time programmable memory using a MRAM stack...

Multilayer structure for reducing film roughness in magnetic devices

Adaptive reference scheme for magnetic memory applications

Patents Applicationslast 30 patents

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

Electrical Testing Apparatus for Spintronics Devices

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

Method and Circuits for Programming STT-MRAM Cells for Reducing Bac...

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Fully Compensated Synthetic Ferromagnet for Spintronics Applications

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Electrical Testing Apparatus for Spintronics Devices

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Initialization Process for Magnetic Random Access Memory (MRAM) Pro...

Electrical Testing Apparatus for Spintronics Devices

Fully Compensated Synthetic Ferromagnet for Spintronics Applications

Initialization Process for Magnetic Random Access Memory (MRAM) Pro...

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

Methods and Circuits for Programming STT-MRAM Cells for Reducing Ba...

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

Fully Compensated Synthetic Ferromagnet for Spintronics Applications

Adaptive Reference Scheme for Magnetic Memory Applications

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

Adaptive Reference Scheme for Magnetic Memory Applications

Multilayer Structure for Reducing Film Roughness in Magnetic Devices