Yuan-Tai Tseng

Person

Hsinchu County, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Phase change memory device and method for manufacturing the same
- Patent number 12,048,258
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
Information Patent Grant
Memory device for reducing thermal crosstalk
- Patent number 11,950,434
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
Information Patent Grant
Resistive random-access memory (RRAM) cell with recessed bottom ele...
- Patent number 11,871,686
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,855,127
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yi Jen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall spacer structure for memory cell
- Patent number 11,818,962
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yao-Wen Chang
Information Patent Grant
Semiconductor structure
- Patent number 11,805,660
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chern-Yow Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacturing the same
- Patent number 11,785,861
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench formation scheme for programmable metallization cell to prev...
- Patent number 11,785,786
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Ting Sung
- G11 - INFORMATION STORAGE
Information Patent Grant
3D RRAM cell structure for reducing forming and set voltages
- Patent number 11,751,406
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Hsien Hsieh
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit having a resistor layer partially overlapping en...
- Patent number 11,742,262
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density memory devices with low cell leakage and methods for f...
- Patent number 11,690,232
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Te-Hsien Hsieh
Information Patent Grant
Method of forming memory cell
- Patent number 11,665,911
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,569,296
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chern-Yow Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer in memory cell to prevent metal redeposition
- Patent number 11,532,785
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,532,697
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yi Jen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with conductive etch-stop layer
- Patent number 11,430,956
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Chyi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacturing the same
- Patent number 11,362,265
- Issue date Jun 14, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench formation scheme for programmable metallization cell to prev...
- Patent number 11,342,379
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Ting Sung
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random-access memory (RRAM) cell with recessed bottom ele...
- Patent number 11,289,648
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having via landing protection
- Patent number 11,289,651
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory (RRAM) cell with recessed bottom ele...
- Patent number 11,189,789
- Issue date Nov 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage resistant RRAM/MIM structure
- Patent number 11,158,789
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Chyi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with conductive etch-stop layer
- Patent number 11,158,797
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Chyi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall spacer structure for memory cell
- Patent number 11,121,308
- Issue date Sep 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yao-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming memory cell
- Patent number 11,088,202
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D RRAM cell structure for reducing forming and set voltages
- Patent number 11,088,203
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Hsien Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,037,983
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chern-Yow Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage resistant RRAM/MIM structure
- Patent number 11,005,037
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming Chyi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing a thin film resistor with ends overlapped...
- Patent number 10,985,090
- Issue date Apr 20, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming embedded nonvolatile memory
- Patent number 10,868,024
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Ming Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240349630
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Tai TSENG
Information Patent Application
MEMORY DEVICE FOR REDUCING THERMAL CROSSTALK
- Publication number 20240244850
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Tai Tseng
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240105775
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Yu CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240088206
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- YI JEN TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240023460
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- FU-TING SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL SPACER STRUCTURE FOR MEMORY CELL
- Publication number 20230389445
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Wen Chang
Information Patent Application
TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...
- Publication number 20230380188
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Ting Sung
- G11 - INFORMATION STORAGE
Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20230100433
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE FOR REDUCING THERMAL CROSSTALK
- Publication number 20230064578
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20220336575
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- YI JEN TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MEMORY CELL
- Publication number 20220302209
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220293854
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Tai TSENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...
- Publication number 20220278170
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Ting Sung
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20220216267
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- CHERN-YOW HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING VIA LANDING PROTECTION
- Publication number 20220216404
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY (RRAM) CELL WITH RECESSED BOTTOM ELE...
- Publication number 20220190240
- Publication date Jun 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20220123207
- Publication date Apr 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL SPACER STRUCTURE FOR MEMORY CELL
- Publication number 20210384413
- Publication date Dec 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY MEMORY DEVICES WITH LOW CELL LEAKAGE AND METHODS FOR F...
- Publication number 20210375993
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Te-Hsien Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D RRAM CELL STRUCTURE FOR REDUCING FORMING AND SET VOLTAGES
- Publication number 20210366987
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Hsien Hsieh
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FORMING MEMORY CELL
- Publication number 20210359003
- Publication date Nov 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210343932
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- FU-TING SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20210296395
- Publication date Sep 23, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- CHERN-YOW HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit and Manufacturing and Method Thereof
- Publication number 20210242109
- Publication date Aug 5, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yuan-Tai TSENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20210118981
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- YI JEN TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL SPACER STRUCTURE FOR MEMORY CELL
- Publication number 20210111333
- Publication date Apr 15, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yao-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MEMORY CELL
- Publication number 20210091139
- Publication date Mar 25, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D RRAM CELL STRUCTURE FOR REDUCING FORMING AND SET VOLTAGES
- Publication number 20210036057
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Te-Hsien Hsieh
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20200381477
- Publication date Dec 3, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- CHERN-YOW HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...
- Publication number 20200357851
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS

Yuan-Tai Tseng

Person

Patents Grantslast 30 patents

Phase change memory device and method for manufacturing the same

Memory device for reducing thermal crosstalk

Resistive random-access memory (RRAM) cell with recessed bottom ele...

Semiconductor structure and method for forming the same

Sidewall spacer structure for memory cell

Semiconductor structure

Semiconductor structure and method of manufacturing the same

Trench formation scheme for programmable metallization cell to prev...

3D RRAM cell structure for reducing forming and set voltages

Integrated circuit having a resistor layer partially overlapping en...

High density memory devices with low cell leakage and methods for f...

Method of forming memory cell

Semiconductor structure

Buffer layer in memory cell to prevent metal redeposition

Semiconductor structure and method for forming the same

RRAM cell structure with conductive etch-stop layer

Semiconductor structure and method of manufacturing the same

Trench formation scheme for programmable metallization cell to prev...

Resistive random-access memory (RRAM) cell with recessed bottom ele...

Memory device having via landing protection

Resistive random-access memory (RRAM) cell with recessed bottom ele...

Leakage resistant RRAM/MIM structure

RRAM cell structure with conductive etch-stop layer

Sidewall spacer structure for memory cell

Method of forming memory cell

3D RRAM cell structure for reducing forming and set voltages

Semiconductor structure and method of forming the same

Leakage resistant RRAM/MIM structure

Methods of manufacturing a thin film resistor with ends overlapped...

Method of forming embedded nonvolatile memory

Patents Applicationslast 30 patents

PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

MEMORY DEVICE FOR REDUCING THERMAL CROSSTALK

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

SIDEWALL SPACER STRUCTURE FOR MEMORY CELL

TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...

BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION

MEMORY DEVICE FOR REDUCING THERMAL CROSSTALK

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

METHOD OF FORMING MEMORY CELL

PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...

SEMICONDUCTOR STRUCTURE

MEMORY DEVICE HAVING VIA LANDING PROTECTION

RESISTIVE RANDOM-ACCESS MEMORY (RRAM) CELL WITH RECESSED BOTTOM ELE...

BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION

SIDEWALL SPACER STRUCTURE FOR MEMORY CELL

HIGH DENSITY MEMORY DEVICES WITH LOW CELL LEAKAGE AND METHODS FOR F...

3D RRAM CELL STRUCTURE FOR REDUCING FORMING AND SET VOLTAGES

METHOD OF FORMING MEMORY CELL

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE

Integrated Circuit and Manufacturing and Method Thereof

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SIDEWALL SPACER STRUCTURE FOR MEMORY CELL

METHOD OF FORMING MEMORY CELL

3D RRAM CELL STRUCTURE FOR REDUCING FORMING AND SET VOLTAGES

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...