Yuang-Chang Lin

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Feng-Yuan, TW

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Patents Grantslast 30 patents

Information Patent Grant
Method for forming a gate with metal silicide
- Patent number 6,689,673
- Issue date Feb 10, 2004
- United Microelectronics Corp.
- Kirk Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a self-aligned contact hole on a semiconductor wafer
- Patent number 6,306,760
- Issue date Oct 23, 2001
- United Microelectronics Corp.
- Hsin-Tuei Hsu
- H01 - BASIC ELECTRIC ELEMENTS