Yuangang Wang

Person

Shijiazhuang, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Normally-off gallium oxide field-effect transistor structure and pr...
- Patent number 11,456,387
- Issue date Sep 27, 2022
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuanjie Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium oxide SBD terminal structure and preparation method
- Patent number 11,417,779
- Issue date Aug 16, 2022
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuanjie Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing tilted mesa and method for manufacturing d...
- Patent number 11,349,043
- Issue date May 31, 2022
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Xingye Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing avalanche photodiode
- Patent number 11,342,474
- Issue date May 24, 2022
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Xingye Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide detector and preparation method therefor
- Patent number 11,282,977
- Issue date Mar 22, 2022
- The 13th Research institute of China Electronics Technolegy Group Corporation
- Xingye Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing isolation area of gallium oxide device
- Patent number 11,244,821
- Issue date Feb 8, 2022
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuanjie Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing self-aligned surface channel field effect tran...
- Patent number 11,189,696
- Issue date Nov 30, 2021
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS
- Yuangang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode field effect transistor
- Patent number 11,127,849
- Issue date Sep 21, 2021
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuanjie Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced HFET
- Patent number 10,854,741
- Issue date Dec 1, 2020
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS
- Yuangang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing cap-layer-structured gallium oxide field effec...
- Patent number 10,505,024
- Issue date Dec 10, 2019
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuanjie Lv
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Preparation Method of GaN Field Effect Transistor Based on Diamond...
- Publication number 20220254632
- Publication date Aug 11, 2022
- The !3th Research Institute of China Electronics Technology Group Corporation
- Yuangang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultraviolet Detector and Preparation Method Therefor
- Publication number 20220190175
- Publication date Jun 16, 2022
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Xingye Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF GALLIUM OXIDE FIELD-EFFECT TRANSISTOR STRUCTURE AND PR...
- Publication number 20210098628
- Publication date Apr 1, 2021
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuanjie LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Oxide SBD Terminal Structure and Preparation Method
- Publication number 20210043778
- Publication date Feb 11, 2021
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuanjie LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Preparing Avalanche Photodiode
- Publication number 20210036177
- Publication date Feb 4, 2021
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Xingye Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Tilted Mesa and Method for Manufacturing D...
- Publication number 20210020801
- Publication date Jan 21, 2021
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Xingye Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DETECTOR AND PREPARATION METHOD THEREFOR
- Publication number 20210020802
- Publication date Jan 21, 2021
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Xingye Zhou
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Method for Preparing Isolation Area of Gallium Oxide Device
- Publication number 20210013027
- Publication date Jan 14, 2021
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuanjie LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING SELF-ALIGNED SURFACE CHANNEL FIELD EFFECT TRAN...
- Publication number 20200373390
- Publication date Nov 26, 2020
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuangang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement-Mode Field Effect Transistor
- Publication number 20200312992
- Publication date Oct 1, 2020
- Yuanjie LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED HFET
- Publication number 20200075754
- Publication date Mar 5, 2020
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuangang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING CAP-LAYER-STRUCTURED GALLIUM OXIDE FIELD EFFEC...
- Publication number 20190027590
- Publication date Jan 24, 2019
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuanjie Lv
- H01 - BASIC ELECTRIC ELEMENTS

Yuangang Wang

Person

Patents Grantslast 30 patents

Normally-off gallium oxide field-effect transistor structure and pr...

Gallium oxide SBD terminal structure and preparation method

Method for manufacturing tilted mesa and method for manufacturing d...

Method for preparing avalanche photodiode

Silicon carbide detector and preparation method therefor

Method for preparing isolation area of gallium oxide device

Method for preparing self-aligned surface channel field effect tran...

Enhancement-mode field effect transistor

Enhanced HFET

Method for preparing cap-layer-structured gallium oxide field effec...

Patents Applicationslast 30 patents

Preparation Method of GaN Field Effect Transistor Based on Diamond...

Ultraviolet Detector and Preparation Method Therefor

NORMALLY-OFF GALLIUM OXIDE FIELD-EFFECT TRANSISTOR STRUCTURE AND PR...

Gallium Oxide SBD Terminal Structure and Preparation Method

Method for Preparing Avalanche Photodiode

Method for Manufacturing Tilted Mesa and Method for Manufacturing D...

SILICON CARBIDE DETECTOR AND PREPARATION METHOD THEREFOR

Method for Preparing Isolation Area of Gallium Oxide Device

METHOD FOR PREPARING SELF-ALIGNED SURFACE CHANNEL FIELD EFFECT TRAN...

Enhancement-Mode Field Effect Transistor

ENHANCED HFET

METHOD FOR PREPARING CAP-LAYER-STRUCTURED GALLIUM OXIDE FIELD EFFEC...