Yuanning Chen

Person

Orlando, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low temperature sub-nanometer periodic stack dielectrics
- Patent number 11,004,612
- Issue date May 11, 2021
- MicroSol Technologies Inc.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-powered integrated circuit with photovoltaic cell
- Patent number 9,048,151
- Issue date Jun 2, 2015
- Texas Instruments Incorporated
- Yuanning Chen
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Self-powered integrated circuit with multi-junction photovoltaic cell
- Patent number 8,883,541
- Issue date Nov 11, 2014
- Texas Instruments Incorporated
- Yuanning Chen
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Self-powered integrated circuit with multi-junction photovoltaic cell
- Patent number 8,552,470
- Issue date Oct 8, 2013
- Texas Instruments Incorporated
- Yuanning Chen
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Integrated circuit with metal silicide regions
- Patent number 7,800,226
- Issue date Sep 21, 2010
- Agere Systems Inc.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealing to improve edge roughness in semiconductor technology
- Patent number 7,704,883
- Issue date Apr 27, 2010
- Texas Instruments Incorporated
- Stephanie W. Butler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using oxynitride spacer to reduce parasitic capacitance in CMOS dev...
- Patent number 7,667,275
- Issue date Feb 23, 2010
- Texas Instruments Incorporated
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having improved acr...
- Patent number 7,569,464
- Issue date Aug 4, 2009
- Texas Instruments Incorporated
- Karen H. R. Kirmse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of dopant loss in a gate structure
- Patent number 7,276,408
- Issue date Oct 2, 2007
- Texas Instruments Incorporated
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming metal silicide regions in an integrated circuit
- Patent number 7,250,356
- Issue date Jul 31, 2007
- Agere Systems Inc.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for oxide fabrication using oxidation steps below and above...
- Patent number 7,148,153
- Issue date Dec 12, 2006
- Agere Systems Inc.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Encapsulated spacer with low dielectric constant material to reduce...
- Patent number 7,033,897
- Issue date Apr 25, 2006
- Texas Instruments Incorporated
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic circuit structure with improved dielectric properties
- Patent number 6,930,006
- Issue date Aug 16, 2005
- Agere Systems Inc.
- Konstantin K. Bourdelle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TWO-STEP OXIDATION PROCESS FOR OXIDIZING A SILICON SUBSTRATE WHEREI...
- Patent number 6,551,946
- Issue date Apr 22, 2003
- Agere Systems Inc.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a graded grown, high quality oxide layer for a sem...
- Patent number 6,541,394
- Issue date Apr 1, 2003
- Agere Systems Guardian Corp.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High quality oxide for use in integrated circuits
- Patent number 6,492,712
- Issue date Dec 10, 2002
- Agere Systems Guardian Corp.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for benchmarking thin film measurement tools
- Patent number 6,303,397
- Issue date Oct 16, 2001
- Agere Systems Guardian Corp.
- Yuanning Chen
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
LOW TEMPERATURE SUB-NANOMETER PERIODIC STACK DIELECTRICS
- Publication number 20200294722
- Publication date Sep 17, 2020
- MicroSol Technologies Inc.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ENERGY HARVESTING DEVICE
- Publication number 20160094072
- Publication date Mar 31, 2016
- Yuanning Chen
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SELF-POWERED INTEGRATED CIRCUIT WITH MULTI-JUNCTION PHOTOVOLTAIC CELL
- Publication number 20130295711
- Publication date Nov 7, 2013
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-POWERED INTEGRATED CIRCUIT WITH MULTI-JUNCTION PHOTOVOLTAIC CELL
- Publication number 20120126247
- Publication date May 24, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Yuanning Chen
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
SELF-POWERED INTEGRATED CIRCUIT WITH PHOTOVOLTAIC CELL
- Publication number 20120126298
- Publication date May 24, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Yuanning Chen
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
STACKED POLY STRUCTURE TO REDUCE THE POLY PARTICLE COUNT IN ADVANCE...
- Publication number 20080251864
- Publication date Oct 16, 2008
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALING TO IMPROVE EDGE ROUGHNESS IN SEMICONDUCTOR TECHNOLOGY
- Publication number 20080150045
- Publication date Jun 26, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Stephanie W. Butler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING IMPROVED ACR...
- Publication number 20080153273
- Publication date Jun 26, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Karen H.R. Kirmse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF DOPANT LOSS IN A GATE STRUCTURE
- Publication number 20070284608
- Publication date Dec 13, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit with metal silicide regions
- Publication number 20070252220
- Publication date Nov 1, 2007
- Agere Systems Inc.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using Oxynitride Spacer to Reduce Parasitic Capacitance in CMOS Dev...
- Publication number 20060216882
- Publication date Sep 28, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using oxynitride spacer to reduce parasitic capacitance in CMOS dev...
- Publication number 20060054934
- Publication date Mar 16, 2006
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Encapsulated spacer with low dielectric constant material to reduce...
- Publication number 20050263834
- Publication date Dec 1, 2005
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Encapsulated spacer with low dielectric constant material to reduce...
- Publication number 20050087775
- Publication date Apr 28, 2005
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of dopant loss in a gate structure
- Publication number 20050079655
- Publication date Apr 14, 2005
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of hafnium silicon oxynitride as the cap layer of the sidewall...
- Publication number 20040113206
- Publication date Jun 17, 2004
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of hafnium silicon oxynitride as the cap layer of the sidewall...
- Publication number 20040099964
- Publication date May 27, 2004
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of hafnium silicon oxynitride as the cap layer of the sidewall...
- Publication number 20040094782
- Publication date May 20, 2004
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming metal silicide regions in an integrated circuit
- Publication number 20040053485
- Publication date Mar 18, 2004
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for oxide fabrication using oxidation steps below and above...
- Publication number 20030143863
- Publication date Jul 31, 2003
- Agere Systems Inc.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for oxide fabrication using oxidation steps below and above...
- Publication number 20030119337
- Publication date Jun 26, 2003
- Agere Systems Inc.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic circuit structure with improved dielectric properties
- Publication number 20020163050
- Publication date Nov 7, 2002
- Konstantin K. Bourdelle
- H01 - BASIC ELECTRIC ELEMENTS

Yuanning Chen

Person

Patents Grantslast 30 patents

Low temperature sub-nanometer periodic stack dielectrics

Self-powered integrated circuit with photovoltaic cell

Self-powered integrated circuit with multi-junction photovoltaic cell

Self-powered integrated circuit with multi-junction photovoltaic cell

Integrated circuit with metal silicide regions

Annealing to improve edge roughness in semiconductor technology

Using oxynitride spacer to reduce parasitic capacitance in CMOS dev...

Method for manufacturing a semiconductor device having improved acr...

Reduction of dopant loss in a gate structure

Method for forming metal silicide regions in an integrated circuit

Process for oxide fabrication using oxidation steps below and above...

Encapsulated spacer with low dielectric constant material to reduce...

Electronic circuit structure with improved dielectric properties

TWO-STEP OXIDATION PROCESS FOR OXIDIZING A SILICON SUBSTRATE WHEREI...

Method of making a graded grown, high quality oxide layer for a sem...

High quality oxide for use in integrated circuits

Method for benchmarking thin film measurement tools

Patents Applicationslast 30 patents

LOW TEMPERATURE SUB-NANOMETER PERIODIC STACK DIELECTRICS

HYBRID ENERGY HARVESTING DEVICE

SELF-POWERED INTEGRATED CIRCUIT WITH MULTI-JUNCTION PHOTOVOLTAIC CELL

SELF-POWERED INTEGRATED CIRCUIT WITH MULTI-JUNCTION PHOTOVOLTAIC CELL

SELF-POWERED INTEGRATED CIRCUIT WITH PHOTOVOLTAIC CELL

STACKED POLY STRUCTURE TO REDUCE THE POLY PARTICLE COUNT IN ADVANCE...

ANNEALING TO IMPROVE EDGE ROUGHNESS IN SEMICONDUCTOR TECHNOLOGY

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING IMPROVED ACR...

REDUCTION OF DOPANT LOSS IN A GATE STRUCTURE

Integrated circuit with metal silicide regions

Using Oxynitride Spacer to Reduce Parasitic Capacitance in CMOS Dev...

Using oxynitride spacer to reduce parasitic capacitance in CMOS dev...

Encapsulated spacer with low dielectric constant material to reduce...

Encapsulated spacer with low dielectric constant material to reduce...

Reduction of dopant loss in a gate structure

Use of hafnium silicon oxynitride as the cap layer of the sidewall...

Use of hafnium silicon oxynitride as the cap layer of the sidewall...

Use of hafnium silicon oxynitride as the cap layer of the sidewall...

Method for forming metal silicide regions in an integrated circuit

Process for oxide fabrication using oxidation steps below and above...

Process for oxide fabrication using oxidation steps below and above...

Electronic circuit structure with improved dielectric properties