Yuanzheng Yue

Person

Chandler, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for forming semiconductor devices using sacrificial capping...
- Patent number 11,784,236
- Issue date Oct 10, 2023
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with an etch stop layer and method therefor
- Patent number 11,437,301
- Issue date Sep 6, 2022
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,971,613
- Issue date Apr 6, 2021
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 10,957,790
- Issue date Mar 23, 2021
- NXP USA, INC.
- Bruce McRae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,644,142
- Issue date May 5, 2020
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with regrown contacts and methods of fabrication
- Patent number 10,403,718
- Issue date Sep 3, 2019
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with regrown contacts and methods of fabrication
- Patent number 10,355,085
- Issue date Jul 16, 2019
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE WITH AN ETCH STOP LAYER AND METHOD THEREFOR
- Publication number 20220122903
- Publication date Apr 21, 2022
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING SEMICONDUCTOR DEVICES USING SACRIFICIAL CAPPING...
- Publication number 20220102529
- Publication date Mar 31, 2022
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20200227547
- Publication date Jul 16, 2020
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION
- Publication number 20190206994
- Publication date Jul 4, 2019
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION
- Publication number 20190206998
- Publication date Jul 4, 2019
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20190198623
- Publication date Jun 27, 2019
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION
- Publication number 20190157440
- Publication date May 23, 2019
- NXP USA, Inc.
- Bruce McRae Green
- H01 - BASIC ELECTRIC ELEMENTS

Yuanzheng Yue

Person

Patents Grantslast 30 patents

Methods for forming semiconductor devices using sacrificial capping...

Device with an etch stop layer and method therefor

Semiconductor devices with doped regions functioning as enhanced re...

Semiconductor device with selectively etched surface passivation

Semiconductor devices with doped regions functioning as enhanced re...

Semiconductor devices with regrown contacts and methods of fabrication

Semiconductor devices with regrown contacts and methods of fabrication

Patents Applicationslast 30 patents

DEVICE WITH AN ETCH STOP LAYER AND METHOD THEREFOR

METHODS FOR FORMING SEMICONDUCTOR DEVICES USING SACRIFICIAL CAPPING...

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION

SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION