Yuci LIN

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Chengdu, CN

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Patents Grantslast 30 patents

Information Patent Grant
Trench MOS device with improved single event burn-out endurance
- Patent number 10,546,951
- Issue date Jan 28, 2020
- University of Electronic Science and Technology of China
- Min Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction schottky diode
- Patent number 9,929,285
- Issue date Mar 27, 2018
- University of Electronic Science and Technology of China
- Min Ren
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH MOS DEVICE WITH IMPROVED SINGLE EVENT BURN-OUT ENDURANCE
- Publication number 20190371937
- Publication date Dec 5, 2019
- University of Electronic Science and Technology of China
- Min REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION SCHOTTKY DIODE
- Publication number 20180026143
- Publication date Jan 25, 2018
- University of Electronic Science and Technology of China
- Min REN
- H01 - BASIC ELECTRIC ELEMENTS